ECH8602M Ordering number : ENA1562 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8602M General-Purpose Switching Device Applications Features • • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit 30 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol Conditions V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=3A Ratings min typ 30 V VDS=30V, VGS=0V VGS=±8V, VDS=0V Marking : TZ Unit max 0.5 1 μA ±10 μA 1.3 5 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21710PE TK IM TC-00002221 No. A1562-1/4 ECH8602M Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 Turn-ON Delay Time Ratings Conditions min ID=3A, VGS=4.5V ID=3A, VGS=4.0V ID=1.5A, VGS=2.5V typ Unit max 15.4 22 30 16.1 23 31 mΩ mΩ 18 30 44 mΩ td(on) tr See specified Test Circuit. 305 ns See specified Test Circuit. 490 ns See specified Test Circuit. 3500 ns Fall Time td(off) tf See specified Test Circuit. 1200 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=6A 7.5 nC Gate-to-Source Charge Qgs VDS=15V, VGS=4.5V, ID=6A 1.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=15V, VGS=4.5V, ID=6A 1.6 Diode Forward Voltage VSD IS=6A, VGS=0V 0.8 Rise Time Turn-OFF Delay Time Package Dimensions 8 7 6 5 1 2 3 4 0.25 Top View 2.9 0.15 5 2.3 2.8 0 to 0.02 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 4 1 0.65 0.3 0.9 0.25 V Electrical Connection unit : mm (typ) 7011A-003 8 nC 1.2 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit 4.5V 0V VDD=15V VIN ID=3A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT Rg G ECH8602M P.G 50Ω S Rg=1kΩ No. A1562-2/4 ECH8602M ID -- VDS 3.0 2.5 2.0 1.5 5 4 3 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT15055 RDS(on) -- VGS IT15048 RDS(on) -- Ta 70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=1.5A 50 3A 40 30 20 10 0 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 2 Source Current, IS -- A °C -25 °C = 75 Ta 25 °C 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 5 5 7 10 2 IT15051 3 2 tf 1000 7 tr td(on) 5 3 2 100 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 --40 --20 2 0 3 IT15053 20 40 60 80 100 120 140 160 IT15310 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 1.1 IT15052 VGS -- Qg 4.5 VDD=15V VGS=4.5V td(off) 10 0.01 7 5 3 2 0.001 0.1 Gate-to-Source Voltage, VGS -- V 0.1 0.01 20 3 2 5 7 30 Ambient Temperature, Ta -- °C 7 1.0 A =1.5 , ID V 5 =2. =3A VGS , ID 4.0V = =3A VGS V, I D 5 . 4 = VGS 40 IT15309 10 2 50 0 --60 12 VDS=10V 3 60 Ta= 75° C 25° C --25 °C 60 0 25 ° C 1 0 70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 6 0.5 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 7 2 1.0 Switching Time, SW Time -- ns 8 --25° C 3.5 9 Ta= 75°C 4.0 ID -- VGS VDS=10V 10 VGS=1.5V Drain Current, ID -- A 4.5 11 10.0V Drain Current, ID -- A 5.0 12 2.0V 5.5 2.5V 4.5V 4 .0V 6.0 VDS=15V ID=6A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 8 IT15311 No. A1562-3/4 ECH8602M ASO 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s ID=6A 10 DC Operation in this area is limited by RDS(on). 0.1 7 5 Ta=25°C 3 2 Single pulse When mounted on 0.01 0.01 2 3 5 7 0.1 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 1m s 10 ms 0m s op era tio n ceramic substrate (900mm2×0.8mm) 2 3 5 7 1.0 PD -- Ta 1.8 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15058 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT5059 Note on usage : Since the ECH8602M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1562-4/4