Rohm EMH3 General purpose (dual digital transistors) Datasheet

Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
EMH3 / UMH3N / IMH3A
Transistors
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
zExternal dimensions (Units : mm)
(3)
0.22
(4)
(5)
(6)
0.5 0.5
1.0
1.6
EMH3
(2)
1.2
1.6
(1)
0.5
0.13
zFeatures
1) Two DTAK13Ts chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
Each lead has same dimensions
Abbreviated symbol : H3
zStructure
Epitaxial planar type
NPN silicon transistor
ROHM : EMT6
1.3
0.65
(1)
1.25
2.0
(3)
(2)
(4)
(6)
(5)
0.2
The following characteristics apply to both DTr1 and DTr2.
0.65
UMH3N
0.1Min.
EMH3 / UMH3N
(3) (2)
R1
IMH3A
(1)
(4) (5)
R1
DTr1
0.9
0to0.1
zEquivalent circuit
0.7
0.15
2.1
Each lead has same dimensions
(6)
ROHM : UMT6
EIAJ : SC-88
DTr1
Abbreviated symbol : H3
DTr2
IMH3A
R1
(2)
R1=4.7kΩ
(1)
(3)
0.95 0.95
1.9
2.9
(1)
(4)
R1=4.7kΩ
(3)
(2)
(6)
(6)
R1
(5)
(5)
(4)
0.3
DTr2
1.6
Type
Code
T2R
TN
T110
Basic ordering
unit (pieces)
8000
3000
3000
−
−
EMH3
UMH3N
−
IMH3A
−
0.8
0.15
0.3to0.6
Taping
0to0.1
Package
1.1
2.8
zPackaging specifications
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H3
−
−
For the very latest product data and news visit angliac.com
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
EMH3 / UMH3N / IMH3A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
100
mA
Parameter
Collector current
Collector
power
dissipation
IC
EMH3,UMH3N
150 (TOTAL)
Pc
IMH3A
∗1
mW
∗2
300 (TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
50
−
−
V
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.5
µA
VCB=50V
Emitter cutoff current
IEBO
−
−
0.5
µA
VEB=4V
Parameter
Collector-emitter saturation voltage
Conditions
IC=50µA
VCE(sat)
−
−
0.3
V
IC/IB=5mA/0.25mA
hFE
100
250
600
−
VCE=5V, IC=1mA
DC current transfer ratio
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
VCE=10mA, IE=−5mA, f=100MHz
−
∗ Transition frequency of the device
1k
VCE=5V
DC CURRENT GAIN : hFE
500
200
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
1
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
1
lC/lB=20
500m
200m
100m
Ta=100°C
25°C
−40°C
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
For the very latest product data and news visit angliac.com
∗
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