Rohm DTC115TKA 100ma / 50v digital transistors (with built-in resistors) Datasheet

100mA / 50V Digital transistors
(with built-in resistors)
DTC115TM / DTC115TE / DTC115TUA / DTC115TKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
DTC115TM
0.2
1.2
0.32
 Features
1)Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2)The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3)Only the on / off conditions need to be set for
operation, making the device design easy.
4) Higher mounting densities can be achieved.
0.8
1.2
(3)
0.2
(1)(2)
0.22
0.4 0.4
0.13
0.5
(1) Base
(2) Emitter
(3) Collector
0.8
ROHM : VMT3
Abbreviated symbol : 09
DTC115TE
0.7
1.6
0.55
0.3
(2)
(1)
0.2
0.2
0.1Min.
 Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
1.6
0.8
(3)
0.15
0.5 0.5
1.0
ROHM : EMT3
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 09
 Packaging specifications
DTC115TUA
UMT3
SMT3
Packaging type
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
Basic ordering
Part No. unit (pieces)
8000
3000
3000
3000
−
−
−
DTC115TM
DTC115TE
−
DTC115TUA
−
−
DTC115TKA
−
−
−
0.7
(3)
(1)
(2)
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
−
−
−
0.15
1.3
Abbreviated symbol : 09
DTC115TKA
0.1Min.
EMT3
2.1
VMT3
0.9
0.2
0.3
1.25
Package
2.0
(1) Emitter
(2) Base
(3) Collector
1.1
2.9
0.4
0.8
(3)
1.6
2.8
 Inner circuit
(2)
(1)
0.95 0.95
R1
0.15
E
ROHM : SMT3
EIAJ : SC-59
E : Emitter
C : Collector
B : Base
1.9
Abbreviated symbol : 09
0.3Min.
C
B
(1) Emitter
(2) Base
(3) Collector
R1=100kΩ
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○
1/2
2009.06 - Rev.B
DTC115TM / DTC115TE / DTC115TUA / DTC115TKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
VCBO
VCEO
50
50
V
V
VEBO
IC
5
100
V
mA
DTC115TM / DTC115TE
DTC115TUA / DTC115TKA
Junction temperature
Collector power
dissipation
Tj
150
200
150
Tstg
−55 to +150
Pc
Storage temperature
mW
˚C
˚C
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
50
50
5
−
−
−
−
−
−
−
−
V
V
IC=50μA
IC=1mA
V
μA
IE=50μA
−
−
μA
V
VEB=4V
VCE(sat)
−
−
0.5
0.5
0.3
hFE
100
250
600
−
IC=1mA, VCE=5V
Input resistance
R1
Transition frequency
fT ∗
70
−
100
250
130
−
kΩ
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
∗ Characteristics of built-in transistor.
BVEBO
ICBO
IEBO
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2/2
Conditions
VCB=50V
IC/IB=1mA/0.1mA
−
VCE=10V, IE=−5mA, f=100MHz
2009.06 - Rev.B
Notice
Notes
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