Fuji ESAD92-02R Silicon diode Datasheet

DATE
DRAWN FEB.-20-‘
07
CHECKED FEB.-20-‘
07
07
CHECKED FEB.-20-‘
NAME
APPROVED
DWG.NO.
T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric
D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ir d par t y n or u s e d
f or t he m an uf ac tur ing p urp os e s w ith ou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
S P E C I F I C AT I O N
Device Name
: SILICON DIODE
Type Name
: ESAD92-02R
Spec. No.
: MS5D3000
Fuji Electric Device Technology Co.,Ltd.
MS5D3000 1/12
H04-004-07b
Date
FEB.-20
-2007
Classification
Ind.
Content
Applied
date
Enactment
―
――――――
Issued
date
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
Revised
Records
Drawn
Checked
Approved
MS5D3000 2/12
H04-004-06b
1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
ESAD92-02R
2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS
(1) Out view is shown
MS5D3000
9/12
(2) Marking is shown
MS5D3000
9/12
It is marked to type name or abbreviated type name, polarity and Lot No.
(3) Molding resin
Epoxy resin
UL:V-0
MS5D3000
Bar Code Label of EIAJ C-3 Specification.
(1) Type Name
(2) Production Code
(3) Quantity
(4) Lot №(Date code)
(5) Company Code
10/12~12/12
Indispensable description items are shown as below.
3. RATINGS
3.1 MAXIMUM RATINGS
(at Ta=25℃
unless otherwise specified.)
ITEM
SYMBOL
Repetitive peak reverse voltage
CONDITIONS
VRRM
Average output current
Non-repetitive forward surge current**
Storage temperature
*
UNITS
200
V
20 *
A
Sine wave, 10ms 1shot
100
A
Tj
150
℃
Tstg
-40~+150
℃
IFSM
Operating junction temperature
RATINGS
50Hz Square wave duty =1/2
Tc = 115℃
Io
Out put current of center tap full wave connection.
**
Rating per element
3.2 ELECTRICAL CHARACTERISTICS
ITEM
(at Ta=25℃
unless otherwise specified.)
SYMBOL
CONDITIONS
MAXIMUM
UNITS
Forward voltage ***
VF
IF = 10 A
0.95
V
Reverse current ***
IR
VR = VRRM
200
μA
Reverse recovery time***
trr
IF=0.1A,IR=0.2A,Irec=0.05A
0.04
μs
Junction to case
1.5
℃/W
Thermal resistance
Rth(j-c)
*** Rating per element
3.3 MECHANICAL CHARACTERISTICS
Mounting torque
Recommended torque
Approximate mass
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
(4) Characteristics is shown
0.4~0.6
N・m
5.5
g
MS5D3000 3/12
H04-004-03a
4. TEST AND INSPECTION
4.1 STANDARD TEST CONDITION
Standard test condition is Ta=25℃、65%R.H.
If judgment is no doubt, the test condition is possible to test in normal condition
Ta=5~35℃、48~85%R.H.
4.2 STRUCTURE INSPECTION
It inspect with eye and measure, Item 2 shall be satisfied.
4.3 FORWARD AND REVERSE CHARACTERISTICS
It inspect on the standard condition, Item 3.2 shall be satisfied.
4.4 TEST
Reference
Test
No.
Items
Testing methods and Conditions
Terminal
Pull force : 25N
Strength
Force maintaining duration :10±1s
(Tensile)
2
Terminal
Load force : 10N
Strength
Number of times : 2times(90deg./time)
(Bending)
3
Mounting
Screwing torque value:(M3) : 50±10N・cm
Strength
4
Vibration
EIAJ
Sampling
number
Acceptance
number
EIAJ
ED4701/401
method 1
5
EIAJ
ED4701/401
method 3
5
EIAJ
ED4701/402
method 2
5
EIAJ
ED4701/403
test code D
5
EIAJ
ED4701/404
test code D
5
Frequency : 100Hz to 2kHz
Acceleration : 100m/s
2
Sweeping time : 4min./1 cycle
Mechanical test
Standard
ED4701
1
4times for each X, Y&Z directions.
5
Shock
Peak amplitude : 15km/s
2
Duration time : 0.5ms
3times for each X, Y&Z directions.
6
Solder ability 1
(0 : 1)
EIAJ
ED4701/303
test code A
Solder : Sn-37Pb
Solder temp. : 235±5℃
5
Immersion time : 5±0.5s
Apply to flux
Solder ability 2
Solder : Sn-3Ag-0.5Cu
Solder temp. : 245±5℃
5
Immersion time : 5±0.5s
Apply to flux
7
Resistance to
Solder temp. : 260±5°C
Soldering
Immersion time : 10±1s
Heat
Number of times : 1times
Fuji Electric Device Technology Co.,Ltd.
EIAJ
ED4701/302
test code A
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
Test
5
MS5D3000 4/12
H04-004-03a
Test
Test
No.
Items
1
2
3
4
Reference
Testing methods and Conditions
Standard
Sampling
Acceptance
number
number
EIAJ ED4701
High Temp.
Temperature :Tstg max
Storage
Test duration : 1000h
Low Temp.
Temperature :Tstg min
Storage
Test duration : 1000h
Temperature
Temperature : 85±2°C
Humidity
Relative humidity : 85±5%
Storage
Test duration : 1000h
Temperature
Temperature : 85±2°C
Humidity
Relative humidity : 85±5%
Bias
Bias Voltage : VRRM× 0.8
EIAJ
ED4701/201
22
EIAJ
ED4701/202
22
EIAJ
ED4701/103
test code C
22
EIAJ
ED4701/103
test code C
22
EIAJ
ED4701/103
test code F
22
EIAJ
ED4701/105
22
EIAJ
ED4701/307
test code A
22
Test duration : 1000h
Unsaturated
Temperature : 130±2°C
Pressurized
Relative humidity : 85±5%
Vapor
Vapor pressure : 230kPa
Test duration : 48h
Endurance test
6
Temperature
High temp. side : Tstg max
Cycle
Room temp. : 5~35℃
Low temp. side : Tstg min
(0 : 1)
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
7
Thermal
Fluid : pure water(running water)
Shock
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
8
9
10
Steady state
Ta=25±5°C
Operating
Rated load
life
Test duration : 1000h
Intermittent
Tj=Tjmax ~50℃
Operating
3min ON, 3min OFF
life
Test duration : 10000cycles
High Temp.
Temperature : Ta=100 °C
Reverse
Bias Voltage : VR=VRRM duty=1/2
Bias
Test duration : 1000h
Failure Criteria
IR ≦USL x 5
22
EIAJ
ED4701/106
22
EIAJ
ED4701/101
22
USL : Upper specification Limit
VF≦USL x 1.1
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
5
MS5D3000 5/12
H04-004-03a
5.Cautions
・Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from
causing physical injury, fire, or other problem in case any of the products fail. It is recommended to
make your design fail-safe, flame retardant, and free of malfunction.
・The products described in this specification are intended for use in the following electronic and
electrical equipment which has normal reliability requirements.
・Computers ・OA equipment
・Communications equipment (Terminal devices)
・Measurement equipment
・Machine tools
・AV equipment
・Electrical home appliances
・Personal equipment
・Industrial robots etc.
・The products described in this Specification are not designed or manufactured to be used in equipment
or systems used under life-threatening situations. If you are considering using these products in the
equipment listed below, first check the system construction and required reliability, and take adequate
・Transportation equipment (automobiles, trains, ships, etc.)
・Backbone network equipment
・Traffic-signal control equipment
・Gas alarms, leakage gas auto breakers
・Submarine repeater equipment
・Burglar alarms, fire alarms, emergency equipment ・Medical equipment
・Nuclear control equipment etc.
・Do not use the products in this Specification for equipment requiring strict reliability such as (but not
limited to):
・Aerospace equipment ・Aeronautical equipment
6.Warnings
・The Diodes should be used in products within their absolute maximum rating (voltage, current,
temperature, etc. ). The diodes may be destroyed if used beyond the rating.
・The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc…).
・Use the Diodes within their reliability and lifetime under certain environments or conditions.
The Diodes may fail before the target lifetime of your products if used under certain reliability
conditions.
・You must design the Diodes to be operated within the specified maximum ratings (voltage, current,
temperature, etc. ) to prevent possible failure or destruction of devices.
・Consider the possible temperature rise not only for the junction and case, but also for the outer leads.
・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to
avoid electric shock and burns.
・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame.
Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke
or flame in case the Diodes become even hotter during operation.
Design the arrangement to prevent the spread of fire.
・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas.
(hydrogen sulfide, sulfurous acid gas.)
・The Diodes should not used in an irradiated field since they are not radiation proof.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
safety measures such as a backup system to prevent the equipment from malfunctioning.
MS5D3000 6/12
H04-004-03a
Installation
・Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Table 1: Solder temperature and duration
Solder
Method
Duration
temperature
Flow
260±5℃
10±1sec
Soldering iron
350±10℃
3.5±0.5sec
・The immersion depth of the lead should basically be up to the lead stopper and the distance
should be a maximum of 1.5mm from the device.
・When flow-soldering, be careful to avoid immersing the package in the solder bath.
・Refer to the following torque reference When mounting the device on a heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will
Table 2:Recommended tightening torque
Package style
Screw
Recommended tightening torque
TO-3P
M3
0.4~0.6N・m
・The heat sink should have a flatness within ±30μm and roughness within 10μm. Also, keep
the tightening torque within the limits of this specification.
・Improper handling may cause isolation breakdown leading to a critical accident.
・We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is
important to evenly apply the compound and to eliminate any air voids.
Storage
・The Diodes must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45
to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on
the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is
steady.
・The Diodes should not be stored on top of each other, since this may cause excessive external
force on the case.
・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may
cause presoldered connections to go fail during later processing.
・The Diodes should be stored in antistatic containers or shipping bags.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
increase the thermal resistance, both of which conditions may destroy the device.
MS5D3000 7/12
H04-004-03a
7.Appendix
・This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated
Diphenyl Ether ) , substances.
・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘
Cl
eanAi
r
ActofUS’
law.
・If you have any questions about any part of this Specification, please contact Fuji Electric Device
Technology or its sales agent before using the product
・Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in
accordance with the instructions.
・The application examples described in this specification are merely typical uses of Fuji Electric
DeviceTechnology products.
license for such rights.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
This specification does not confer any industrial property rights or other rights, nor constitute a
MS5D3000 8/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
Sn-Cu dipping(Pb<1000ppm)
MS5D3000 9/12
H04-004-03a
Forward Power Dissipation
0
2
0.4
4
Io
0.6
6
0.8
I0
8
8
1.0
10
1.2
Square wave =180°
DC
6
4
2
0
12
14
Fuji Electric Device Technology Co.,Ltd.
(W)
10
0.2
Reverse Power Dissipation
0.1
0.0
1.6
PR
(W)
IR Reverse Current (µA)
IF Forward Current (A)
Tj=150°C
1.4
14
360°
Square wave =120°
λ
0.8
DWG.NO.
WF
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
100
Forward Characteristic (typ.)
104
Reverse Characteristic (typ.)
Tj=150°C
103
Tj=125°C
Tj=25°C
10
102
Tj= 25°C
101
1
100
10-1
0
2.0
1.8
Average Output Current (A)
50
VF Forward Voltage (V)
VR
12
2.2
100
Forward Power Dissipation (max.)
0
VR
Reverse Voltage (V)
150
Reverse Voltage
200
2.4
1.2
100
250
2.6
Reverse Power Dissipation (max)
Square wave =60°
360°
DC
Sine wave =180°
VR
α
1.4
=180°
1.0
0.6
0.4
Per 1element
0.2
0.0
(V)
200
MS5D3000 10/12
H04-004-03a
Peak Half - Wave Current (A)
Tc
Case Temperature
100
Square wave =120°
60
0
1
5
Io
10
Average Output Current
15
20
25
Cj
(°C)
130
120
DC
110
Sine wave =180°
Square wave =180°
Junction Capacitance (pF)
140
30
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
IFSM
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
200
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (typ.)
190
180
170
160
100
150
90
80
70
Square wave =60°
50
(A)
10
:Conduction angle of forward current for each rectifier element
10
VR
Reverse Voltage (V)
100
Io:Output current of center-tap full wave connection
Surge Capability (max.)
100
10
Number of Cycles at 50Hz
10
MS5D3000 11/12
H04-004-03a
10
-2
10
-1
t
Time
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
Transient Thermal Impedance
T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric
D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d
f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of
Fuji Electri c Device Technology Co .,Ltd.
(°C/W)
Transient Thermal Impedance (max.)
Rth j-c:1.5℃/W
0
10
10
-1
(sec)
10
0
10
1
10
2
MS5D3000 12/12
H04-004-03a
Similar pages