HP AMMP-6530 5-30 ghz image reject mixer Datasheet

Agilent AMMP-6530
5– 30 GHz Image Reject Mixer
Data Sheet
Features
• 5x5 mm Surface Mount Package
• Broad Band Performance 5– 30 GHz
• Low Conversion Loss of 8 dB
• High Image Rejection of 15 – 20 dB
• Good 3rd Order Intercept of
+18 dBm
Description
Agilent’s AMMP-6530 is an image
reject mixer that operates from
5 GHz to 30 GHz. The cold
channel FET mixer is designed to
be an easy-to-use component for
any surface mount PCB application. It can be used drain pumped
for low conversion loss applications, or when gate pumped the
mixer can provide high linearity
for SSB up-conversion. An
external 90-degree hybrid is used
to achieve image rejection and a
-1V voltage reference is needed.
Intended applications include
microwave radios, 802.16, VSAT,
and satellite receivers. Since this
one mixer can cover several
bands, the AMMP-6530 can
reduce part inventory. The
integrated mixer eliminates
complex tuning and assembly
processes typically required by
hybrid (discrete-FET or diode)
mixers. The package is fully SMT
compatible with backside grounding and I/O to simplify assembly.
8
• Single -1V, no current Supply Bias
RF
IF1
NC
1
7
Vg
NC
Applications
• Microwave Radio Systems
2
6
• Satellite VSAT, DBS Up/Down Link
IF2
NC
3
5
gate
4
Pin
Function
1
IF1
Top view
package base: GND
IF2
4
LO
• Broadband Wireless Access
(including 802.16 and 802.20
WiMax)
• WLL and MMDS loops
• Commercial grade military
2
3
• LMDS & Pt-Pt mmW Long Haul
5
6
Vg
7
8
RF
Absolute Maximum Ratings [1]
Symbol
Parameters/Conditions
Units
Min.
Max.
Vg
Gate Supply Voltage
V
0
-3
Pin
CW Input Power
dBm
15
Tch
Operating Channel Temperature
°C
+150
Tstg
Storage Case Temperature
°C
Tmax
Max. Assembly Temp (60 sec max)
°C
-65
+150
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
AMMP-6530 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Typ.
Ig
Gate Supply Current (under any RF power drive and temperature)
mA
0
Vg
Gate Supply Operating Voltage
V
-1V
Note:
1. Ambient operational temperature TA=25°C unless otherwise noted.
AMMP-6530 Typical Performance [2, 3] (TA = 25°C, Vg= -1V, IF frequency = 1 GHz, Zo=50 Ω)
Symbol
Parameters and Test Conditions
Units
Gate Pumped
Drain Pumped
FRF
RF Frequency Range
GHz
5 – 30
5 – 30
FLO
LO Frequency Range
GHz
5 – 30
5 – 30
FIF
IF Frequency Range
GHz
DC – 5
DC – 5
Down Conversion
Up Conversion
Down Conversion
PLO
LO Port Pumping Power
dBm
>10
>0
>10
CG
RF to IF Conversion Gain
dB
-10
-15
-8
RL_RF
RF Port Return Loss
dB
5
5
10
RL_LO
LO Port Return Loss
dB
10
10
5
RL_IF
IF Port Return Loss
dB
10
10
10
IR
Image Rejection Ratio
dB
15
15
15
LO-RF Iso.
LO to RF Port Isolation
dB
22
25
22
LO-IF Iso.
LO to IF Port Isolation
dB
25
25
25
RF-IF Iso.
RF to IF Port Isolation
dB
15
15
15
IIP3
Input IP3, Fdelta=100 MHz,
Prf = -10 dBm, Plo = 15 dBm
dBm
18
—
10
P-1
Input Port Power at 1dB gain
compression point, Plo=+10 dBm
dBm
8
—
0
NF
Noise Figure
dB
10
—
12
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture form TA = 25°C.
3. Specifications are derived from measurements in a 50Ω test environment.
AMMP-6530 RF Specifications in Drain Pumped Test Configuration[4, 5, 6, 7]
(TA = 25°C, Vg = -1.0V, PLO = +10 dBm, Zo = 50 Ω)
Symbol
Parameters and Test Conditions
Units
Typ.
Sigma
CG
Conversion Gain
dB
-8
0.5
IR
Image Rejection Ratio
dB
20
1.0
Notes:
4. Pre-assembly into package performance verified 100% on-wafer.
5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz.
6. This final package part performance is verified by a functional test correlated to actual performance.
7. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0– 2.0 GHz.
2
AMMP-6530 Typical Performance under Gate Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Z o = 50Ω)
RF
8
drain
IF1
NC
1
7
Vg
NC
2
6
-1V
LSB
IF2
NC
3
5
USB
gate
4
Note: The external 90° hybrid coupler
is from M/A-COM: PN 2032-6344-00.
Frequency is 1.0 – 2.0 GHz.
0
-5
-10
-10
-15
-20
-25
-30
-35
-40
-15
-20
-25
-30
-35
-50
5
10
15
20
25
-5
5
30
10
20
25
30
15
20
10
15
FREQUENCY (GHz)
Figure 4. Noise Figure.
LO=+7 dBm, IF=1 GHz.
3
25
30
25
30
5
10
15
20
25
FREQUENCY (GHz)
Figure 5. Input 3rd Order Intercept Point.
IF=1 GHz.
-5
-10
-15
-20
5
20
20
0
Plo=10(dBm)
Plo=15(dBm)
0
15
Figure 3. RF Port Input Power P-1dB.
LO=+10 dBm, IF=1 GHz.
10
5
15
10
FREQUENCY (GHz)
CONVERSION GAIN (dB)
25
IIP3 (dBm)
20
10
5
Figure 2. Conversion Gain with IF
terminated for High Side Conversion
LO=+10 dBm, IF=1 GHz.
Figure 1. Conversion Gain with IF
terminated for Low Side Conversion
LO=+10 dBm, IF=1 GHz.
NOISE FIGURE (dB)
15
FREQUENCY (GHz)
FREQUENCY (GHz)
5
5
USB(dB)
LSB(dB)
-45
-50
10
0
-40
USB(dB)
LSB(dB)
-45
15
INPUT POWER (dB)
0
-5
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
LO
30
-25
-10
-5
0
5
10
15
LO POWER (dBm)
Figure 6. Conversion Gain vs. LO Power.
RF=21 GHz (-20 dBm), LO=20 GHz.
20
AMMP-6530 Typical Performance under Gate Pumped Down Conversion
Operation (TA = 25°C, Vg = -1V, Z o=50Ω)
0
CONVERSION GAIN (dB)
CONVERSION GAIN (dB),
RETURN LOSS (dB)
0
-5
-10
-15
-5
-10
-15
Conv. Gain (dB)
Return Loss (dB)
-20
0
1
2
3
4
5
-20
-2
6
-1.5
FREQUENCY (GHz)
Figure 7. Conversion Gain and Match vs.
IF Frequency. RF=20 GHz, LO=10 dBm.
60
RF
LO
50
ISOLATION (dB)
-5
-10
40
30
20
-15
RF-IF
LO-IF
LO-RF
10
0
-20
0
5
10
15
20
25
30
FREQUENCY (GHz)
Figure 9. RF & LO Return Loss. LO=10 dBm.
4
-0.5
Figure 8. Conversion Gain vs. Gate Voltage.
RF=20 GHz, LO=10 dBm.
0
RETURN LOSS (dB)
-1
Vg (V)
5
10
15
20
25
30
FREQUENCY (GHz)
Figure 10. Isolation. LO=+10 dBm, IF=1 GHz.
AMMP-6530 Typical Performance under Gate Pumped Up Conversion
Operation (TA = 25°C, Vg = -1V, Z o=50Ω)
LO
4
gate
3
LSB
5
IF2
NC
NC
Vg
2
6
-1V
USB
7
1
NC
IF1
drain
8
RF
0
0
USB (dB)
LSB (dB)
USB (dB)
LSB (dB)
-5
-10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
-5
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
-35
-40
-40
-45
-45
-50
-50
5
10
15
20
25
5
30
10
15
20
25
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Up-conversion Gain wth IF
terminated for High Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
Figure 11. Up-conversion Gain with IF
terminated for Low Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
0
-5
CONVERSION LOSS (dB)
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
-7
-9
-11
-13
-35
-15
-40
5
10
15
20
25
30
FREQUENCY (GHz)
Figure 13. LO-RF Up-conversion Isolation.
5
0
2
4
6
8
10 12 14 16 18 20
PLO=PIF (dB)
Figure 14. Up-conversion Gain vs. Pumping
Power. LO power=IF power, IF=1 GHz,
RF=25 GHz.
AMMP-6530 Typical Performance under Drain Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Z o = 50Ω)
LO
8
drain
IF1
NC
1
7
Vg
USB
NC
2
6
-1V
IF2
NC
3
5
LSB
gate
4
Note: The external 90° hybrid coupler
is from M/A-COM: PN 2032-6344-00.
Frequency is 1.0 – 2.0 GHz.
0
-5
-10
-10
-15
-20
-25
-30
-35
-40
15
INPUT POWER (dBm)
0
-5
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
RF
-15
-20
-25
-30
-35
-45
USB(dBm)
LSB(dBm)
-45
-50
-50
5
10
15
20
25
30
5
0
-40
USB (dB)
LSB (dB)
10
-5
5
10
FREQUENCY (GHz)
15
20
25
30
5
10
FREQUENCY (GHz)
Figure 15. Conversion Gain with IF
terminated for Low Side Conversion.
LO=+10 dBm, IF=1 GHz.
Figure 16. Conversion Gain with IF
terminated for High Side Conversion.
LO=+10 dBm, IF=1 GHz.
20
25
30
Figure 17. RF Port Input Power P-1dB.
LO=+10 dBm, IF=1 GHz.
25
20
15
FREQUENCY (GHz)
0
Plo=10(dBm)
Plo=15(dBm)
10
5
15
10
0
5
10
15
20
25
30
FREQUENCY (GHz)
Figure 18. Noise Figure. LO=+7 dBm, IF=1 GHz.
-5
-10
-15
-20
5
0
6
CONVERSION GAIN (dB)
IIP3 (dBm)
NOISE FIGURE (dB)
20
15
5
10
15
20
25
30
Flo (dB)
Figure 19. Input 3rd Order Intercept Point.
IF=1 GHz.
-25
-10
-5
0
5
10
15
20
LO POWER (dBm)
Figure 20. Conversion Gain vs. LO power.
RF=21 GHz (-20 dBm), LO=20 GHz.
Biasing and Operation
The recommended DC bias
condition for optimum
performance, and reliability is
Vg = -1 volts. There is no current
consumption for the gate biasing
because the FET mixer was
designed for passive operation.
For down conversion, the
AMMP-6530 may be configured in
a low loss or high linearity
application. In a low loss configuration, the LO is applied through
the drain (Pin8, power divider
side). In this configuration, the
AMMP-6530 is a “drain pumped
mixer”. For higher linearity
applications, the LO is applied
through the gate (Pin4, Lange
coupler side). In this configuration, the AMMP-6530 is a “gate
pumped mixer” (or Resistive
mixer). The mixer is also suitable
for up-conversion applications
under the gate pumped mixer
operation shown on page 3.
Please note that the image
rejection and isolation performance is dependent on the
selection of the low frequency
quadrature hybrid. The performance specification of the low
frequency quadrature hybrid as
well as the phase balance and
VSWR of the interface to the
AMMP-6530 will affect the overall
mixer performance.
8
RF
IF1
NC
1
7
Vg
NC
2
6
IF2
NC
3
5
gate
4
Figure 21. Simplified MMIC Schematic.
IF1
IF1
IF2
IF2
LO/RF
LO/RF
RF/LO
RF/LO
Gn Vg
Vg
Gnd
d
Figure 22. Demonstration Board (available upon request).
1
.200 [5.08]
Recommended SMT Attachment
The AMMP Packaged Devices are
compatible with high volume
surface mount PCB assembly
processes.
2 3
8
4
7 6 5
.200 [5.08]
The PCB material and mounting
pattern, as defined in the data
sheet, optimizes RF performance
and is strongly recommended.
An electronic drawing of the land
pattern is available upon request
from Agilent Sales & Application
Engineering.
.075 [1.91]
Front View
Side View
.114 [2.9]
.011 [0.28]
.014 [0.365]
.018 [0.46]
3 2 1
.016 [0.40]
.126 [3.2]
4
8
.059 [1.5]
.100 [2.54]
.012 [0.30]
.029 [0.75]
5
6 7
.100 [2.54]
.028 [0.70]
.016 [0.40]
.093 [2.36]
Dimensional Tolerances: 0.002" [0.05 mm]
Back View
Notes:
1. * Indicates Pin 1
2. Dimensions are in inches [millimeters]
3. All Grounds must be soldered to PCB RF Ground
Figure 23. Outline Drawing.
.093 [2.36]
.010 [0.25]
.016 [0.40]
.011 [0.28]
.0095 [0.24]
.016 [0.40]
.126 [3.20]
.059 [1.50] .020 [0.50]
.012 [0.3]
Ground vias should
be solder filled.
.018 [0.46]
.0095 [0.24]
.018 [0.46]
.114 [2.90]
Figure 24. Suggested PCB Material and Land Pattern. Dimensions in inches [mm].
Material is Rogers R04350, 0.010" thick.
8
Manual Assembly
1. Follow ESD precautions while
handling packages.
2. Handling should be along the
edges with tweezers.
3. Recommended attachment is
conductive solder paste.
Please see recommended
solder reflow profile. Conductive epoxy is not recommended. Hand soldering is not
recommended.
4. Apply solder paste using a
stencil printer or dot placement. The volume of solder
paste will be dependent on
PCB and component layout
and should be controlled to
ensure consistent mechanical
and electrical performance.
5. Follow solder paste and
vendor’s recommendations
when developing a solder
reflow profile. A standard
profile will have a steady ramp
up from room temperature to
the pre-heat temperature to
avoid damage due to thermal
shock.
6. Packages have been qualified
to withstand a peak temperature of 260° C for 20 seconds.
Verify that the profile will not
expose device beyond these
limits.
Solder Reflow Profile
The most commonly used solder
reflow method is accomplished in
a belt furnace using convection
heat transfer. The suggested
reflow profile for automated
reflow processes is shown in
Figure 25. This profile is designed
to ensure reliable finished joints.
However, the profile indicated in
Figure 25 will vary among
different solder pastes from
different manufacturers and is
shown here for reference only.
Stencil Design Guidelines
A properly designed solder
screen or stencil is required to
ensure optimum amount of
solder paste is deposited onto
the PCB pads. The recommended
stencil layout is shown in Figure
26. The stencil has a solder paste
deposition opening approximately 70% to 90% of the PCB
pad. Reducing stencil opening
can potentially generate more
voids underneath. On the other
hand, stencil openings larger
than 100% will lead to excessive
solder paste smear or bridging
across the I/O pads. Considering
the fact that solder paste thickness will directly affect the
quality of the solder joint, a good
choice is to use a laser cut stencil
composed of 0.127 mm (5 mils)
thick stainless steel which is
capable of producing the required fine stencil outline. The
combined PCB and stencil layout
is shown in Figure 27.
300
Peak = 250 ± 5°C
250
Temp (°C)
Melting point = 218°C
200
150
100
50
Ramp 1
0
0
Preheat
50
Ramp 2
100
Reflow
150
Cooling
200
250
300
Seconds
Figure 25. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste.
0.40
0.46
0.7
0.60
0.6
1.6
0.67
0.95
0.9
0.36
0.40
0.3
3.20 1.80 0.40
0.3
1.8
0.27
0.36
0.2
0.30
0.3
0.4
4x - R0.14
1.60
Stencil
Opening
2.90
Figure 26. Stencil Outline Drawing (mm).
9
Figure 27. Combined PCB and Stencil Layouts (mm).
Part Number Ordering Information
Device Orientation (Top View)
Part Number
Devices
per Container
Container
AMMP-6530-BLK
10
antistatic bag
AMMP-6530-TR1
100
7” Reel
AMMP-6530-TR2
500
7” Reel
Carrier Tape and Pocket Dimensions
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
February 24, 2005
5989-2352EN
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