oH S CO M PL IA NT TISP6NTP2C *R QUAD FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP6NTP2C High Voltage Ringing SLIC Protector Independent Tracking Overvoltage Protection for Two SLICs: - Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current - High 150 mA min. (70 °C) Holding Current - Specified 2/10 Limiting Voltage - Small Outline Surface Mount Package - Full 0 °C to 70 °C Temperature Range D Package (Top View) K1 1 8 K2 G1,G2 2 7 A G3,G4 3 6 A K3 4 5 K4 MDRXAN Rated for Common Impulse Waveforms IPPSM Voltage Impulse Current Impulse Wave Shape Wave Shape A 10/1000 10/1000 25 10/700 5/310 40 2/10 2/10 90 Device Symbol K1 G1,G2 Typical TISP6NTP2C Router Application TERMINAL ADAPTOR K2 SLIC 1 A POTS 1 A TISP6NTP2C PROCESSOR K3 POTS 2 SLIC 2 G3,G4 LINE TRANSCEIVER TRANSCEIVER LAN AI6NTP2C K4 ............................................ UL Recognized Components Description The TISP6NTP2C has been designed for short loop systems such as: – WILL (Wireless In the Local Loop) – SOHO (Small Office Home Office) – FITL (Fibre In The Loop) – ISDN-TA (Integrated Services Digital Network - Terminal Adaptors) – DAML (Digital Added Main Line, Pair Gain) How to Order Device TISP6NTP2C Package D (8-pin Small-Outline) Carrier Order As R (Embossed Tape Reeled) TISP6NTP2CDR-S - (Tube) TISP6NTP2CD-S *RoHS Directive 2002/95/EC Jan 27 2003 including Annex MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. SDRXAIA TISP6NTP2C High Voltage Ringing SLIC Protector Description (Continued) The systems described often have the need to source two POTS (Plain Old Telephone Service) lines, one for a telephone and the other for a facsimile machine. In a single surface mount package, the TISP6NTP2C protects the two POTS line SLICs (Subscriber Line Interface Circuits) against overvoltages caused by lightning, a.c. power contact and induction. The TISP6NTP2C has an array of four buffered P-gate forward conducting thyristors with twin commoned gates and a common anode connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each thyristor. The buffer transistors reduce the gate supply current. In use, the cathodes of an TISP6NTP2C thyristors are connected to the four conductors of two POTS lines (see applications information). Each gate is connected to the appropriate negative voltage battery feed of the SLIC driving that line pair. By having separate gates, each SLIC can be protected at a voltage level related to the negative supply voltage of that individual SLIC. The anode of the TISP6NTP2C is connected to the SLIC common. The TISP6NTP2C voltage and current ratings also make it suitable for the protection of ISDN d.c. feeds of down to -115 V (ETSI Technical Report ETR 080:1993, ranges 1 to 5). Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltages are initially clipped close to the SLIC negative supply by emitter follower action of the TISP6NTP2C buffer transistor. If sufficient clipping current flows, the TISP6NTP2C thyristor will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the high holding current of the TISP6NTP2C prevents d.c. latchup. Absolute Maximum Ratings, 0 °C ≤ TJ ≤ 70 °C (Unless Otherwise Noted) Value Unit Repetitive peak off-state voltage, VGK = 0 Rating Symbol VDRM -170 V Repetitive peak gate-cathode voltage, VKA = 0 VGKRM -167 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 5/320 (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700) 25 IPPSM A 40 2/10 (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) 90 Non-repetitive peak on-state current, 50 Hz/60 Hz (see Notes 1 and 2) 0.1 s 7 1s 2.7 ITSM 5s A 1.5 300 s 0.45 900 s 0.43 Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Note 1) I GSM +25 A TA -40 to +85 °C TJ -40 to +150 °C Tstg -40 to +150 °C Operating free-air temperature range Junction temperature Storage temperature range NOTES: 1. Initially, the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions. Gate voltage range is -20 V to -155 V. 2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathodeanode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in this case the anode terminal current will be four times the rated current value of an individual terminal pair). Recommended Operating Conditions Component CG RS Gate decoupling capacitor Series resistor for GR-1089-CORE intra-building surge survival, section 4.5.9, tests 1 and 2 Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector Min Typ Max Unit 100 220 nF 5 50 Ω 10 50 Ω MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2C High Voltage Ringing SLIC Protector Electrical Characteristics, 0 °C ≤ TJ ≤ 70 °C (Unless Otherwise Noted) Parameter ID V(BO) V(BO) VGK(BO) VF VFRM VFRM IH IGKS IGT VGT CKA Test Conditions V D = VDRM , VGK = 0 Ramp breakover UL 497B, dv/dt ≤±100 V/µs, di/dt = ±10 A/µs, Impulse breakover voltage Gate-cathode impulse breakover voltage Forward voltage Ramp peak forward recovery voltage Impulse peak forward VGG = -100 V, Maximum ramp value = ±10 A 2/10 µs, ITM = -27 A, di/dt = -27 A/µs, RS = 50 Ω, VGG = -100 V, 2/10 µs, ITM = -27 A, di/dt = -27 A/µs, RS = 50 Ω, VGG = -100 V, (see Note 3) I F = 5 A, t w = 200 µs UL 497B, dv/dt ≤±100 V/µs, di/dt = ±10 A/µs, Maximum ramp value = ±10 A Holding current I T = -1 A, di/dt = 1A/ms, VGG = -100 V Gate-cathode trigger voltage Cathode-anode offstate capacitance TJ = 25 °C 2/10 µs, ITM = -27 A, di/dt = -27 A/µs, RS = 50 Ω, (see Note 3) Gate trigger current TJ = 25 °C (see Note 3) recovery voltage Gate reverse current Typ TJ = 25 °C Off-state current voltage Min µA µA -112 V -115 V 15 V 3 V 5 V 12 V mA IT = -3 A, t p(g) ≥ 20 µs, VGG = -100 V f = 1 MHz, Vd = 1 V, IG = 0, (see Note 4) -5 -50 -5 TJ = 25 °C I T = -3 A, t p(g) ≥ 20 µs, VGG = -100 V Unit -150 TJ = 25 °C VGG = VGK = VGKRM, VKA = 0 Max µA -50 µA 5 mA 6 mA 2.5 V VD = -3 V 100 pF VD = -48 V 50 pF NOTES: 3. GR-1089-CORE intra-building 2/10, 1.5 kV conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (VGG). 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge. Thermal Characteristics Parameter RθJA Junction to free air thermal resistance Test Conditions TA = 70 °C, EIA/JESD51-3 PCB, EIA/JESD51-2 environment, Ptot = 0.52 W MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Min Typ Max Unit 160 °C/W TISP6NTP2C High Voltage Ringing SLIC Protector Parameter Measurement Information PRINCIPAL TERMINAL V-I CHARACTERISTIC GATE TRANSFER CHARACTERISTIC +i +iK Quadrant I IPPSM Forward Conduction Characteristic IFSM (= |ITSM |) IF IF VF VGK(BO) VGG -v IGT VD ID +v -i G +iG IH V(BO) IT IT ITSM IG Quadrant III Switching Characteristic IK IPPSM -i PM6XAIC -i K Figure 1. Principal Terminal and Gate Transfer Characteristics MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2C High Voltage Ringing SLIC Protector APPLICATIONS INFORMATION SLIC Protection The generation of POTS lines at the customer premise normally uses a ringing SLIC. Although the lines are short, a central office ringing voltage level is often required for fax machine operation. High voltage SLICs are now available that can produce adequate ringing voltage (see table). The TISP6NTP2C has been designed to work with these SLICs which use battery voltages, VBATH, down to -150 V. Figure 2 shows a typical example with one TISP6NTP2C protecting two SLICs. The table below shows some details of HV SLICs using multiple negative supply rails. Manufacturer INFINEON‡ SLIC Series SLIC-P‡ LEGERITY™‡ Unit ISLIC™‡ SLIC # PEB 4266 79R241 79R101 79R100 Data Sheet Issue 14/02/2001 -/08/2000 -/07/2000 -/07/2000 Short Circuit Current 110 150 150 150 mA VBATH max. -155 -104 -104 -104 V VBATL max. -150 -104 V BATH VBATH V AC Ringing for: 85 45† 50† 55† V rms Crest Factor 1.4 1.4 1.4 1.25 VBATH -70 -90 -99 -99 VBATR -150 R or T Overshoot < 250 ns Line Feed Resistance -36 -15 20 + 30 -24 15 50 -20 -24 12 50 V -20 V 12 50 V Ω † Assumes -20 V battery voltage during ringing. ‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies . ISDN Protection For voltage feed protection, the cathodes of an TISP6NTP2C thyristors are connected to the four conductors to be protected (see Figure 3). Each gate is connected to the appropriate negative voltage feed. The anode of the TISP6NTP2C is connected to the system common. Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltages are initially clipped close to the negative supply by emitter follower action of the TISP6NTP2C buffer transistor. If sufficient clipping current flows, the TISP6NTP2C thyristor will regenerate and switch into a low voltage on-state condition. As the negative overvoltage subsides, the high holding current of the TISP6NTP2C prevents d.c. latchup. Voltage Stress Levels Figure 4 shows the protector electrodes. The package terminal designated gate, G, is the transistor base, B, electrode connection and so is marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK (off state) and the antiparallel diode (reverse blocking). This clause covers the necessary testing to ensure the junctions are good. Testing transistor CB and EB: The maximum voltage stress level for the TISP6NTP2C is VBATH with the addition of the short term antiparallel diode voltage overshoot, VFRM. The current flowing out of the G terminal is measured at VBATH plus V FRM. The SCR K terminal is shorted to the common (0 V) for this test (see Figure 4). The measured current, I GKS, is the sum of the junction currents I CB and IEB. Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, ID, can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is shorted during this test (see Figure 5). Summary: Two tests are need to verify the protector junctions. Maximum current values for IGKS and ID are required at the specified applied voltage conditions. MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2C High Voltage Ringing SLIC Protector APPLICATIONS INFORMATION R CURRENT SINK R CURRENT SINK R CURRENT SINK R CURRENT SINK -ve SLIC PROTECTOR +t° 0 +t° RS1 -ve +t° SLIC 1 0 +t° -ve +t° RS2 0 +t° VBATH -ve +t° 0V ISDN POWER SUPPLY 0 +t° TISP6NTP2C NEGATIVE SUPPLY RS3 SLIC 2 IK RS4 AI6XBNB CG 100 nF 0V AI6XDJA TISP6NTP2C Resistor "R" may be needed if sink has internal clamp diode Figure 2. SLIC Protection Figure 3. Protection of Four ISDN Power Feeds 0V 0V ICB B (G) VBATH + VFRM ICB V(BO) IR 1/4 T ISP 6NTP2C K B (G) ID(I) A 0V K IGKS ID 1/4 T ISP IEB 6NTP2C AI6XCEB Figure 4. Transistor CB and EB Verification AI6XCFB ID(I) is the internal SCR value of ID Figure 5. Off-State Current Verification MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP6NTP2C High Voltage Ringing SLIC Protector MECHANICAL DATA Device Symbolization Code Devices will be coded as below. Device Symbolization Code TISP6NTP2C 6NTP2C “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. MARCH 2002 – REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.