Fairchild FDMC86520DC N-channel dual cooltm powertrenchâ® mosfet 60 v, 40 a, 6.3 mî© Datasheet

FDMC86520DC
N-Channel Dual CoolTM PowerTrench® MOSFET
60 V, 40 A, 6.3 mΩ
Features
„ Dual Cool
TM
General Description
Top Side Cooling PQFN package
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
advanced
PowerTrench®
process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
„ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A
„ Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.5 A
„ High performance technology for extremely low rDS(on)
„ RoHS Compliant
Applications
„ Primary DC-DC Switch
„ Motor Bridge Switch
„ Synchronous Rectifier
Pin 1
S
S
S
G
D
Top
Power 33
D
D
D
S
D
S
D
S
D
G
D
Bottom
MOSFET Maximum Ratings TA= 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
PD
TJ, TSTG
Units
V
±20
V
40
(Note 1a)
-Pulsed
EAS
Ratings
60
17
A
80
Single Pulse Avalanche Energy
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
128
73
(Note 1a)
Operating and Storage Junction Temperature Range
3.0
-55 to + 150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
4.2
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.7
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
42
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
105
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
17
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
12
°C/W
Package Marking and Ordering Information
Device Marking
86520
Device
FDMC86520DC
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
Package
Dual CoolTM Power 33
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
September 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.5
V
60
V
30
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2.5
3.7
-10
mV/°C
VGS = 10 V, ID = 17 A
5.1
6.3
VGS = 8 V, ID = 14.5 A
6.5
8.7
VGS = 10 V, ID = 17 A, TJ = 125°C
8.2
10.2
VDS = 10 V, ID = 17 A
49
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
0.1
2097
2790
pF
557
745
pF
13
40
pF
0.5
2.5
Ω
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
18
33
VDD = 30 V, ID = 17 A,
VGS = 10 V, RGEN = 6 Ω
6.6
14
ns
19
35
ns
4
10
ns
29
40
nC
23
33
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 8 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 30 V,
ID = 17 A
nC
12
nC
5.5
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
VGS = 0 V, IS = 17 A
(Note 2)
0.83
1.3
VGS = 0 V, IS = 2.5 A
(Note 2)
0.74
1.2
IF = 17 A, di/dt = 100 A/μs
2
V
41
65
ns
23
37
nC
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
4.2
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.7
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
42
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
105
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
29
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
40
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
30
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
79
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
17
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
12
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
16
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 105 °C/W when mounted on
a minimum pad of 2 oz copper
a. 42 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 128 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 16 A, VDD = 54 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 24 A.
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
3
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
Thermal Characteristics
5
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
80
VGS = 7 V
VGS = 8 V
60
VGS = 6.5 V
40
20
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
VGS = 6 V
4
VGS = 6.5 V
3
VGS = 7 V
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
5
VGS = 8 V
0
20
Figure 1. On-Region Characteristics
60
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
25
ID = 17 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
1.8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
ID = 17 A
15
TJ = 125 oC
10
TJ = 25 oC
5
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
80
IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
VDS = 5 V
40
TJ = 150 oC
TJ = 25 oC
20
TJ = -55 oC
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 10 V
3
4
5
6
7
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
8
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
4
1.2
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
VDD = 30 V
ID = 17 A
Ciss
8
VDD = 20 V
VDD = 40 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
4
1000
2
Coss
100
10
f = 1 MHz
VGS = 0 V
0
0
5
10
15
20
25
30
Figure 7. Gate Charge Characteristics
60
90
ID, DRAIN CURRENT (A)
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.01
0.1
VGS = 10 V
60
VGS = 8 V
30
o
Limited by Package
1
10
0
25
100
50
RθJC = 1.7 C/W
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
300
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
100
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
1
Crss
1
0.1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.01
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 105 oC/W
10 s
TA = 25 oC
DC
0.1
1
10
100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
100
TA = 25 oC
10
1 -3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
SINGLE PULSE
RθJA = 105 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 105 C/W
0.01
0.003 -3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
6
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
7
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMC86520DC Rev. C
8
www.fairchildsemi.com
FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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