IRLW/I520A Advanced Power MOSFET FEATURES BVDSS = 100 V ■ Avalanche Rugged Technology RDS(on) = 0.22 Ω ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = 9.2 A ■ Improved Gate Charge ■ Extended Safe Operating Area I2-PAK D2-PAK ■ 175℃ Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V 2 ■ Lower RDS(ON) : 0.176 Ω (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Drain-to-Source Voltage 100 Continuous Drain Current (TC=25℃) 9.2 Continuous Drain Current (TC=100℃) 6.5 ① Units V A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy ② 112 mJ IAR Avalanche Current ① 9.2 A EAR Repetitive Avalanche Energy ① 4.9 mJ dv/dt Peak Diode Recovery dv/dt ③ 6.5 V/ns 3.8 W 32 Total Power Dissipation (TA=25℃) * PD Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and A 49 W 0.33 W/℃ - 55 to +175 Storage Temperature Range ℃ Maximum Lead Temp. for Soldering 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 3.04 RθJA Junction-to-Ambient * -- 40 RθJA Junction-to-Ambient -- 62.5 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount). 1 N-CHANNEL POWER MOSFET IRLW/I520A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage ΔBV/ΔTJ Breakdown Voltage Temp. Coeff. VGS(th) Gate Threshold Voltage IDSS RDS(on) -- -- V -- 0.1 -- V/℃ 1.0 -- 2.0 V Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150℃ 100 -- -- 0.22 Ω VGS=5V,ID=4.6A -- VDS=40V,ID=4.6A -- 7.7 Ciss Input Capacitance -- 340 440 Coss Output Capacitance -- 90 115 Crss Reverse Transfer Capacitance -- 39 50 td(on) Turn-On Delay Time -- 5 20 Rise Time -- 10 30 Turn-Off Delay Time -- 19 50 Fall Time -- 9 30 Qg Total Gate Charge -- 10.2 15 Qgs Gate-Source Charge -- 1.7 -- Qgd Gate-Drain(＂Miller＂) Charge -- 6.0 -- tf VDS=5V,ID=250μA -- Forward Transconductance td(off) μA See Fig 7 -- gfs tr nA VGS=0V,ID=250μA ID=250μA Ω IGSS 100 Test Condition pF ④ ④ VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, ns RG=9Ω See Fig 13 ④⑤ VDS=80V,VGS=5V, nC ID=9.2A See Fig 6 & Fig 12 ④ ⑤ Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units IS Continuous Source Current -- -- ISM Pulsed-Source Current ① -- -- 32 VSD Diode Forward Voltage ④ -- -- 1.5 trr Reverse Recovery Time -- 98 Qrr Reverse Recovery Charge -- 0.34 9.2 A Test Condition Integral reverse pn-diode in the MOSFET V TJ=25℃,IS=9.2A,VGS=0V -- ns TJ=25℃,IF=9.2A -- μC diF/dt=100A/μs ④ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2mH, IAS=9.2A, VDD=25V, RG=27Ω, Starting TJ =25℃ ③ ISD≤9.2A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET IRLW/I520A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 101 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 100 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-1 100 175 oC 100 25 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test - 55 oC -1 10 101 ID , Drain Current [A] ID , Drain Current [A] Top : 10-1 101 0 2 4 6 8 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 0.4 VGS = 5 V 0.3 0.2 0.1 VGS = 10 V @ Note : TJ = 25 oC 0.0 0 10 20 30 101 100 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 175 oC 25 oC 40 10-1 0.4 0.6 0.8 ID , Drain Current [A] 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 600 360 C iss C oss 240 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 120 00 10 101 VDS , Drain-Source Voltage [V] 6 VGS , Gate-Source Voltage [V] Capacitance [pF] 480 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 20 V VDS = 50 V VDS = 80 V 4 2 @ Notes : ID = 9.2 A 0 0 2 4 6 8 10 12 QG , Total Gate Charge [nC] 3 N-CHANNEL POWER MOSFET IRLW/I520A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 @ Notes : 1. V = 0 V GS 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 5 V 2. ID = 4.6 A 0.5 2. I = 250 µA D 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 0.0 -75 200 -50 -25 TJ , Junction Temperature [oC] 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 102 10 Operation in This Area is Limited by R ID , Drain Current [A] 100 µs 1 ms 101 10 ms DC 100 @ Notes : 1. T = 25 oC C 8 6 4 2 2. T = 175 oC J 3. Single Pulse 10-1 0 10 101 0 25 102 50 75 100 125 150 175 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response D=0.5 100 @ Notes : 1. Zθ J C (t)=3.04 0.2 0.1 o C/W Max. 2. Duty Factor, D=t1 /t2 0.05 3. TJ M -TC =PD M *Z θJC -1 10 t1 single pulse 10- 5 (t) PDM 0.02 0.01 θJC Z (t) , ID , Drain Current [A] DS(on) 10- 4 10- 3 t2 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 101 [sec] 4 N-CHANNEL POWER MOSFET IRLW/I520A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator ” VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 5V tp tp Time 5 N-CHANNEL POWER MOSFET IRLW/I520A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by ＂RG＂ • IS controlled by Duty Factor ＂D＂ Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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