Comchip CDBG860-G Smd schottky barrier diode Datasheet

SMD Schottky Barrier Diode
CDBG820-G THRU CDBG860-G (RoHS Device)
Reverse Voltage: 20 ~ 60 Volts
Forward Current: 8 A
Features:
G package
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.283(7.2)
0.260(6.6)
0.012(0.3) Typ.
For surface mounted applications.
Exceeds enviromental standards of MIL-S-19500/228
0.189(4.8)
0.165(4.2)
0.152(3.8)
0.144(3.6)
Low leakage current
Mechanical Data:
0.244(6.2)
0.228(5.8)
Case: Molded plastic, G package (6.9mmx4.5mm)
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026.
Polarity: Indicated by cathode band
Mounting position: Any
Approx. Weight: 0.00585 ounce, 0.195 gram
0.098(2.5)
0.075(1.9)
0.032(0.8) Typ.
0.040(1.0) Typ.
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
o
Maximum Ratings (at TA = 25 C unless otherwise noted)
Parameter
Symbol
Marking Code
CDBG820-G
CDBG830-G
CDBG840-G
CDBG850-G
CDBG860-G
SS82
SS83
SS84
SS85
SS86
Unit
Repetitive Peak Reverse Voltage
VRRM
20
30
40
50
60
V
RMS voltage
VRMS
14
21
28
35
42
V
Continuous reverse voltage
VR
20
30
40
50
60
V
Maximum forward voltage
VF
Max. Forward rectified current (See Fig.1)
IO
8.0
A
IFSM
150
A
Max. Forward surge current
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
Max. Reverse current
o
VR = VRRM TA = 25 C
0.55
Diode junction capacitance
f=1MHz and applied 4vDC reverse Voltage
Max. Storage temperature
V
1.0
IR
mA
o
VR = VRRM TA = 100 C
Thermal resistance
Junction Ambient
0.70
50
o C/
RJA
55
Cj
700
pF
TSTG
+150
oC
Operating temperature
-55 to +125
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o
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Page1
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBG820-G THRU CDBG860-G)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
12
50
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
CASE TEMPERATURE,( C)
PEAK FORWARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
10
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
250
.01
200
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
150
8.3ms Single Half
Tj=25 C
Sine Wave
100
JEDEC method
50
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
2800
2400
2000
1600
1200
800
10
Tj=75 C
1.0
Tj=25 C
.1
400
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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