Siemens BF554 Npn silicon rf transistor (for general small-signal rf applications up to 300 mhz in amplifier, mixer and oscillator circuits) Datasheet

NPN Silicon RF Transistor
●
BF 554
For general small-signal RF applications
up to 300 MHz in amplifier,
mixer and oscillator circuits
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
BF 554
CC
Q62702-F1042
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
20
V
Collector-base voltage
VCB0
30
Emitter-base voltage
VEB0
5
Collector current
IC
30
mA
Total power dissipation, TA ≤ 25 ˚C
Ptot
280
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Rth JA
≤
Thermal Resistance
Junction - ambient2)
1)
2)
450
K/W
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 554
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR) CE0
20
–
–
V
Collector cutoff current
VCB = 20 V, IE = 0
ICB0
–
–
100
nA
DC current gain
IC = 1 mA, VCE = 10 V
hFE
60
–
250
–
Base-emitter voltage
IC = 1 mA, VCE = 10 V
VBE
–
0.7
–
V
Transition frequency
IC = 1 mA, VCE = 10 V, f = 100 MHz
fT
–
250
–
MHz
Collector-base capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Ccb
–
0.6
–
pF
Noise figure
IC = 1 mA, VCE = 10 V
f = 200 kHz, gS = 2 mS
f = 1 MHz, gS = 1.5 mS
f = 100 MHz, gS = 10 mS
F
Output conductance
IC = 1 mA, VCE = 10 V, f = 0.5...10 MHz
g22e
AC Characteristics
Semiconductor Group
2
dB
–
–
–
1.5
1.2
3
–
–
–
–
4
–
µS
BF 554
Total power dissipation Ptot = f (TA)
DC current gain hFE = f (IC)
VCE = 10 V
Collector current IC = f (VBE)
VCE = 10 V
Collector-emitter saturation voltage
VCEsat = f (IC)
hFE = 10
Semiconductor Group
3
BF 554
Collector cutoff current ICB0 = f (TA)
VCB = 20 V
Transition frequency fT = f (IC)
VCE = 10 V, f = 100 MHz
Collector-base capacitance Ccb = f (VCB)
f = 1 MHz
Noise figure F = f (f)
IC = 1 mA, VCE = 10 V, RS = 60 Ω
Semiconductor Group
4
Similar pages