WILLAS FM120-M &115 THRU FM1200- SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers SOD-123H SOT-23 better reverse leakage current and thermal resistance. TRANSISTOR (NPN ) profile surface mounted application in order to • Low FEATURES optimize board space. • Low power loss, high efficiency. Power dissipation • High current capability, low forward voltage drop. capability. • High surge Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” • Ultra high-speed switching. epitaxial planar chip,code metal suffix silicon junction. • Silicon Halogen free product for packing “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 MARKING : HF • RoHS product for packing code suffix "G" =25℃forunless MAXIMUM RATINGS (Taproduct Halogen free packing otherwise code suffix "H"noted) 0.146(3.7) 0.130(3.3) 1. BASE 3. COLLECTOR Mechanical data Value : Molded plastic, Voltage SOD-123H • CaseCollector-Base , Collector-Emitter Voltage • Terminals :Plated terminals, solderable per MIL-STD-750 VCEO 0.031(0.8) Typ. Method 2026 Emitter-Base Voltage VEBO • Polarity : Indicated by cathode band Collector Current -Continuous • Mounting Position : Any Collector Power Dissipation • Weight : Approximated 0.011 gram IC PC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Storage Temperature Tstg Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise For capacitive load, derate current by 20% Parameter RATINGS 0.040(1.0) Unit 0.024(0.6) 60 V 50 V 5 V 0.031(0.8) Typ. Dimensions in inches and (millimeters) Junction Temperature Tj 0.071(1.8) 0.056(1.4) 2. EMITTER Symbol • Epoxy : UL94-V0 rated flame retardant Parameter VCBO 0.012(0.3) Typ. 150 mA 200 mW 150 ℃ ℃ -55-150 specified) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 SYMBOL FM120-MH Symbol Test conditions Min Typ Max Unit Marking Code 12 13 14 40 14 21 28 20 30 40 100uA, I30 V(BR)CBO 20 E 0 VRRM IC== Collector-base breakdown Maximum Recurrent Peakvoltage Reverse Voltage VRMS Maximum RMS Voltage V(BR)CEO Collector-emitter breakdown voltage Maximum DC Blocking Voltage VDC I= C= 0.1mA, IB 0 VCB=60V, IE 0 ICBO I= O Peakcut-off Forwardcurrent Surge Current 8.3 ms single half sine-wave = VCE=50V, IB 0 ICEO IFSM Collector Collector cut-off current Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) 15 60 50 16 60 18 80 35 42 56 70 50 60 80 100 50 VEB= 5V, IC 0 IEBO R= ΘJA EmitterTypical cut-off current Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) hFE DC current gain Operating Temperature Range CJ TJ VCE= 6V, IC= 2mA -55 to +125 130 10 100 V 150 115 120 200 105 140 150 200 V 1.0 0.1 uA 30 0.1 uA 40 120 0.1 uA 400 -55 to +150 - 65 to +175 Storage Temperature Range Collector-emitter saturation voltage VCE(sat)TSTG IC=100mA, IB= 10mA Base-emitter saturation voltage CHARACTERISTICS =100mA, IB= 10mA VBE(sat) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH1FM1100-MH V FM1150-MH FM1200 SYMBOLICFM120-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ fT Transition frequency Rated DC Blocking Voltage @T A=125℃ IR 0.50 VCE=10V, IC= 1mA, f=30MHz 0.70 0.25 V 0.9 0.85 0.5 80 10 0.9 MHz NOTES: CLASSIFICATION OF FE reverse voltage of 4.0 VDC. 1- Measured at 1 MHZ andhapplied Rank L H 130-200 200-400 2- Thermal Resistance From Junction to Ambient Range 2012-06 2012-0 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS &115 SOT-23 Plastic-Encap sulate Transistors FeaturesI —— C hFE 1000 —— IC design, excellent power dissipation offers • Batch process16uA COMMON EMITTER ℃ thermal resistance. Ta=25and better reverse leakage current IC COLLECTOR CURRENT 3 2 1 MIL-STD-19500 /228 hFE optimize board space. 12uA • Low power loss, high efficiency. low forward voltage drop. • High current capability,10uA • High surge capability. 8uA • Guardring for overvoltage protection. • Ultra high-speed switching. 6uA • Silicon epitaxial planar chip, metal4uAsilicon junction. • Lead-free parts meet environmental standards of SOD-123H Ta=100℃ DC CURRENT GAIN (mA) 14uA • Low profile surface mounted application in order to 4 Ta=25℃ 0.146(3.7) 0.130(3.3) 0 0 0.071(1.8) 0.056(1.4) IB=2uA COMMON EMITTER VCE= 6V 10 0.1 Halogen free product for packing code 2 4 6 8 suffix "H" 10 Mechanical data COLLECTOR-EMITTER VOLTAGE 1 VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram T =100 ℃ 100 100 150 10 COLLECTOR CURRENT • Epoxy : UL94-V0 VCEsat rated —— flame IC retardant 2000 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 500 0.012(0.3) Typ. 100 • RoHS product for packing code suffix "G" COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Pb Free Prod Typical Characteristics Package outline VCE THRU FM1200- 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE 5 FM120-M a Ta=25℃ VBEsat —— IC (mA) 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. 1000 Ta=25℃Dimensions in inches and (millimeters) Ta=100 ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. β=10 For10 capacitive load, derate current by 20% 1 10 COLLECTOR CURREMT RATINGS 100 IC 150 β=10 100 0.1 1 —— VBE Maximum Recurrent PeakIC Reverse Voltage 150 VRRM 12 20 COMMON EMITTER 100 Maximum RMS Voltage V = 6V VRMS 14 21 28 VDC (MHz) Marking Code 20 30 40 IC 10 T= a 10 0℃ COLLECTOR CURRENT Peak Forward Surge Current 8.3 ms single half sine-wave T= a 25 ℃ superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 1 CJ Operating Temperature Range TJ Storage Temperature Range 0 CHARACTERISTICS 600 300 NOTES: (pF) 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 30 40 120 -55 to +125 -55 to +150 - 65 toCOMMON +175 EMITTER VCE=10V 0.50 COLLECTOR CURRENT 0.70 PC 250 Ta=25 ℃ to Ambient C CAPACITANCE 18 80 100 IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance 16 IC 60 1.0 VF f=1MHz IE=0/IC=0 FromCibJunction 15 f50 —— T FM120-MH10FM130-MH FM140-MH1 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 SYMBOL 1200 0.1 10 100 900 VBE (mV) Maximum Average Reverse Current at @T A=25℃ Cob/Cib —— VCB/VEB @T A=125℃ Rated 50 DC Blocking Voltage 10 14 40 Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) 0.1 TSTG 13 30 1000 fT (mA) IO Maximum Average Forward Rectified Current TRANSITION FREQUENCY CE Maximum DC Blocking Voltage BASE-EMMITER VOLTAGE Maximum Forward Voltage at 1.0A DC 100 150 10 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 SYMBOL FM120-MH FM130-MH FM140-MH COLLECTOR CURREMT IC (mA) (mA) Cob —— IC Ta 0.9 0.85 (mA) 0.9 0.5 10 200 150 100 50 2012-06 0.1 0.1 WILLAS ELECTRONIC CO 0 1 REVERSE VOLTAGE 2012-0 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS FM120-M &115 THRU FM1200-M SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) .106(2.70) .063(1.60) .047(1.20) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Marking Code Maximum Recurrent Peak Reverse Voltage .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage VRRM 12 20 13 30 VRMS 14 21 28 VDC 20 30 40 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Storage Temperature Range 18 10 .008(0.20) 115 150 120 200 35 42 140 60 56 70 .003(0.08) 105 50 150 200 RΘJA 40 120 -55 to +125 100 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: IR .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 100 80 30 TSTG .004(0.10)MAX. 80 IFSM TJ Operating Temperature Range 16 60 15 50 1.0 CJ Typical Junction Capacitance (Note 1) 14 40 IO Maximum Average Forward Rectified Current Rated DC Blocking Voltage .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 10 Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CO Rev.D WILLAS ELECTRONIC CORP.