AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6801 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6801 is Pb-free (meets ROHS & Sony 259 specifications). AO6801L is a Green Product ordering option. AO6801 and AO6801L are electrically identical. VDS (V) = -30V ID = -2.3 A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) D1 D2 TSOP6 Top View 1 6 2 5 3 4 G1 S2 G2 D1 S1 D2 G1 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Pulsed Drain Current Power Dissipation A B ID IDM TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 V -20 W 0.73 TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.15 °C -55 to 150 Symbol A Maximum -30 -1.8 PD TA=70°C A S2 -2.3 TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C G2 S1 RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W AO6801 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 TJ=55°C -1 -1.4 V 107 135 154 190 VGS=-4.5V, ID=-2A 135 185 mΩ VGS=-2.5V, ID=-1A 195 265 mΩ -1 V -1.35 A TJ=125°C gFS Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-2.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA nA VSD Crss -5 ±100 VGS=-10V, ID=-2.3A IS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.0A A mΩ 8 -0.85 S 409 pF 55 pF 42 pF 12 Ω 4.9 nC 0.6 nC Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 6.9 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=-10V, VDS=-15V, RL=7.5Ω, RGEN=3Ω 3.3 ns 38.5 ns 13.2 ns IF=-2.0A, dI/dt=100A/µs 15 IF=-2.0A, dI/dt=100A/µs 8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 15 8 25°C -4V VGS=-3.5V -ID(A) -ID (A) VDS=-5V -4.5V 10 -3V 6 125°C 4 -2.5V 5 2 -2V 0 0 0 1 2 3 4 5 0 0.5 250 Normalized On-Resistance VGS=-2.5V 200 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 1.6 225 175 150 VGS=-4.5V 125 100 75 VGS=-10V 50 0 1 2 3 4 5 VGS=-4.5V, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-2A 1 0.8 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 300 1.0E+00 ID=-2A 125°C 150 100 50 1.0E-01 -IS (A) 200 25 75 125 150 175 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 100 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 350 250 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.0E-05 50 1.0E-06 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-2.0A 500 Capacitance (pF) -VGS (Volts) 4 3 2 1 400 Ciss 300 200 Coss 100 0 0 1 2 3 4 5 0 6 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 1ms 0.1s 10ms 1.0 20 25 30 TJ(Max)=150°C TA=25°C 15 100µs Power (W) -ID (Amps) 10µs 10.0 10 5 1s 10s DC 0 0.001 0.1 1 10 100 -VDS (Volts) D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 15 20 TJ(Max)=150°C TA=25°C 10 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000