Inchange Semiconductor Product Specification BU406D BU407D Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BU406D VCBO Collector-base voltage 200 Open base BU407D VEBO Emitter-base voltage IC V 330 BU406D Collector-emitter voltage UNIT 400 Open emitter BU407D VCEO VALUE V 150 6 V Collector current (DC) 7 A ICM Collector current-Peak 10 A IB Base current 4 A 60 W 150 ℃ -65~150 ℃ MAX UNIT 2.08 ℃/W Ptot Tj Tstg Open collector Total power dissipation TC=25℃ Maximum operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU406D BU407D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BU406D VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 200 IC=100mA ; IB=0 V 150 BU407D VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.65A 1.3 V 15 mA 400 mA 1.5 V BU406D ICEV VCE=400V; VBE=-1.5V Collector cut-off current BU407D VCE=330V; VBE=-1.5V IEBO Emitter cut-off current VEB=6.0V; IC=0 hFE DC current gain IC=2A ; VCE=5V VF Diode forward voltage IF=5A fT Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz tf Fall time IC=5A ;VCC=40V IBend=0.65A 2 15 10 MHz 0.75 μs Inchange Semiconductor Product Specification BU406D BU407D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3