Cypress CY7C1382F-250BGI 18-mbit (512k x 36/1m x 18) pipelined sram Datasheet

CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
Functional Description [1]
Features
• Supports bus operation up to 250 MHz
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM
cells with advanced synchronous peripheral circuitry and a
two-bit counter for internal burst operation. All synchronous
inputs are gated by registers controlled by a positive edge
triggered clock input (CLK). The synchronous inputs include
all addresses, all data inputs, address-pipelining chip enable
(CE1), depth-expansion chip enables (CE2 and CE3 [2]), burst
control inputs (ADSC, ADSP, and ADV), write enables (BWX,
and BWE), and global write (GW). Asynchronous inputs
include the output enable (OE) and the ZZ pin.
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V or 3.3V IO power supply
• Fast clock-to-output times
— 2.6 ns (for 250 MHz device)
• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel® Pentium®
interleaved or linear burst sequences
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address
strobe controller (ADSC) are active. Subsequent burst
addresses can be internally generated as they are controlled
by the advance pin (ADV).
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle.This part supports byte write
operations (see Pin Definitions on page 6 and Truth Table [4,
5, 6, 7, 8] on page 9 for further details). Write cycles can be one
to two or four bytes wide as controlled by the byte write control
inputs. GW when active LOW causes all bytes to be written.
• Single cycle chip deselect
• CY7C1380D/CY7C1382D available in JEDEC-standard
Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball
FBGA package. CY7C1380F/CY7C1382F available in
Pb-free and non Pb-free 119-ball BGA package
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
operates from a +3.3V core power supply while all outputs
operate with a +2.5 or +3.3V power supply. All inputs and
outputs are JEDEC-standard and JESD8-5-compatible.
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
Selection Guide
250 MHz
200 MHz
167 MHz
Unit
Maximum Access Time
2.6
3.0
3.4
ns
Maximum Operating Current
350
300
275
mA
Maximum CMOS Standby Current
70
70
70
mA
Notes:
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE3, CE2 are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.
Cypress Semiconductor Corporation
Document #: 38-05543 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised Feburary 07, 2007
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Logic Block Diagram – CY7C1380D/CY7C1380F [3] (512K x 36)
A0, A1, A
ADDRESS
REGISTER
2
A [1:0]
MODE
ADV
CLK
Q1
BURST
COUNTER
CLR AND
LOGIC
ADSC
Q0
ADSP
BW D
DQ D , DQP D
BYTE
WRITE REGISTER
DQ D ,DQP D
BYTE
WRITE DRIVER
BW C
DQ C , DQP C
BYTE
WRITE REGISTER
DQ C , DQP C
BYTE
WRITE DRIVER
DQ B , DQP B
BYTE
WRITE REGISTER
DQ B , DQP B
BYTE
WRITE DRIVER
BW B
GW
CE 1
CE 2
CE 3
OE
ZZ
ENABLE
REGISTER
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQP A
DQP B
DQP C
DQP D
DQ A , DQP A
BYTE
WRITE DRIVER
DQ A , DQP A
BYTE
WRITE REGISTER
BW A
BWE
MEMORY
ARRAY
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
CONTROL
Logic Block Diagram – CY7C1382D/CY7C1382F [3] (1M x 18)
A0, A1, A
ADDRESS
REGISTER
2
BURST Q1
COUNTER AND
LOGIC
ADV
CLK
ADSC
BW B
DQ B, DQP B
WRITE DRIVER
DQ B, DQP B
WRITE REGISTER
MEMORY
ARRAY
BW A
SENSE
OUTPUT
OUTPUT
BUFFERS
DQs
DQP A
DQP B
DQ A, DQP A
WRITE DRIVER
DQ A, DQP A
WRITE REGISTER
BWE
GW
CE 1
CE2
CE3
INPUT
ENABLE
REGISTER
PIPELINED
ENABLE
OE
ZZ
SLEEP
CONTROL
Note:
3. CY7C1380F and CY7C1382F have only 1 chip enable (CE1).
Document #: 38-05543 Rev. *E
Page 2 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Configurations
NC
NC
NC
CY7C1382D
(1 Mbit x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
Document #: 38-05543 Rev. *E
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
A
A
A
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
CY7C1380D
(512K X 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
A
A
A
A
A
A
A
A
DQPC
DQC
DQc
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
A
A
CE1
CE2
NC
NC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-pin TQFP Pinout (3 Chip Enable)
Page 3 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Configurations (continued)
119-Ball BGA Pinout
CY7C1380F (512K x 36)
A
1
VDDQ
2
A
3
A
ADSP
4
5
A
6
A
7
VDDQ
B
C
NC/288M
NC/144M
A
A
A
A
ADSC
VDD
A
A
A
A
NC/576M
NC/1G
D
E
DQC
DQC
DQPC
DQC
VSS
VSS
NC
CE1
VSS
VSS
DQPB
DQB
DQB
DQB
F
VDDQ
DQC
VSS
OE
VSS
DQB
VDDQ
G
H
J
K
DQC
DQC
VDDQ
DQD
DQC
DQC
VDD
DQD
BWC
VSS
NC
VSS
ADV
BWB
VSS
NC
VSS
DQB
DQB
VDD
DQA
DQB
DQB
VDDQ
DQA
BWA
VSS
DQA
DQA
DQA
VDDQ
GW
VDD
CLK
L
DQD
DQD
M
VDDQ
DQD
BWD
VSS
N
DQD
DQD
VSS
BWE
A1
NC
VSS
DQA
DQA
P
DQD
DQPD
VSS
A0
VSS
DQPA
DQA
R
NC
A
MODE
VDD
NC
A
NC
T
U
NC
VDDQ
NC/72M
TMS
A
TDI
A
TCK
A
TDO
NC/36M
NC
ZZ
VDDQ
3
4
5
6
7
A
ADSP
A
A
VDDQ
ADSC
VDD
A
A
NC/576M
A
A
NC/1G
CY7C1382F (1M x 18)
1
2
A
VDDQ
A
B
NC/288M
A
A
C
NC/144M
A
A
D
DQB
NC
VSS
NC
VSS
DQPA
NC
E
NC
DQB
VSS
CE1
VSS
NC
DQA
OE
ADV
VSS
DQA
VDDQ
GW
VDD
NC
VSS
NC
NC
DQA
VDD
DQA
NC
VDDQ
F
VDDQ
NC
VSS
G
H
J
NC
DQB
VDDQ
DQB
NC
VDD
BWB
VSS
NC
K
NC
DQB
VSS
CLK
VSS
NC
DQA
L
M
DQB
VDDQ
NC
DQB
NC
VSS
NC
DQA
NC
NC
VDDQ
N
DQB
NC
VSS
BWE
A1
BWA
VSS
VSS
DQA
NC
P
NC
DQPB
VSS
A0
VSS
NC
DQA
R
T
U
NC
NC/72M
VDDQ
A
A
TMS
MODE
A
TDI
VDD
NC/36M
TCK
NC
A
TDO
A
A
NC
NC
ZZ
VDDQ
Document #: 38-05543 Rev. *E
Page 4 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Configurations (continued)
165-Ball FBGA Pinout (3 Chip Enable)
CY7C1380D (512K x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
R
2
3
4
5
6
7
8
9
10
11
NC
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC/144M
A
CE2
BWD
BWA
CLK
OE
NC/576M
NC
DQC
VDDQ
VSS
VDDQ
VSS
VDD
VSS
VSS
VSS
ADSP
VDDQ
A
DQPC
DQC
GW
VSS
VDDQ
NC/1G
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VDDQ
DQB
DQB
A
VSS
VSS
VDD
VSS
VSS
VDD
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
NC
DQD
DQC
NC
DQD
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
NC/72M
A
A
TDI
A1
TDO
A
A
A
A
MODE
NC/36M
A
A
TMS
TCK
A
A
A
A
11
A0
CY7C1382D (1M x 18)
1
2
3
4
5
6
7
8
9
10
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
BWB
NC
CE3
ADSC
OE
ADV
ADSP
A
R
A
NC/576M
NC/144M
A
CE1
CE2
NC
BWA
CLK
BWE
GW
NC
NC
NC
DQB
VDDQ
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
NC/1G
NC
DQPA
DQA
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
NC
NC
DQB
DQB
NC
NC
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
NC
NC
DQA
DQA
ZZ
NC
A
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
DQPB
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC
NC/72M
A
A
TDI
A1
TDO
A
A
A
A
MODE
NC/36M
A
A
TMS
A0
TCK
A
A
A
A
Document #: 38-05543 Rev. *E
Page 5 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Definitions
Name
IO
Description
A0, A1, A
InputAddress inputs used to select one of the address locations. Sampled at the rising edge of
Synchronous the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 [2]are sampled active. A1: A0
are fed to the two-bit counter..
BWA, BWB
BWC, BWD
InputByte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM.
Synchronous Sampled on the rising edge of CLK.
GW
InputGlobal write enable input, active LOW. When asserted LOW on the rising edge of CLK, a
Synchronous global write is conducted (all bytes are written, regardless of the values on BWX and BWE).
BWE
InputByte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be
Synchronous asserted LOW to conduct a byte write.
CLK
InputClock
Clock input. Used to capture all synchronous inputs to the device. Also used to increment the
burst counter when ADV is asserted LOW, during a burst operation.
CE1
InputChip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
Synchronous CE and CE to select or deselect the device. ADSP is ignored if CE is HIGH. CE is sampled
2
3
1
1
only when a new external address is loaded.
CE2 [2]
InputChip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
Synchronous with CE1 and CE3 to select or deselect the device. CE2 is sampled only when a new external
address is loaded.
CE3 [2]
InputChip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
Synchronous CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address
is loaded.
OE
InputOutput enable, asynchronous input, active LOW. Controls the direction of the IO pins. When
Asynchronous LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as
input data pins. OE is masked during the first clock of a read cycle when emerging from a
deselected state.
ADV
InputAdvance input signal, sampled on the rising edge of CLK, active LOW. When asserted, it
Synchronous automatically increments the address in a burst cycle.
ADSP
InputAddress strobe from processor, sampled on the rising edge of CLK, active LOW. When
Synchronous asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is
recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
InputAddress strobe from controller, sampled on the rising edge of CLK, active LOW. When
Synchronous asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is
recognized.
ZZ
InputZZ sleep input. This active HIGH input places the device in a non-time critical sleep condition
Asynchronous with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ
pin has an internal pull down.
DQs, DQPX
IOBidirectional data IO lines. As inputs, they feed into an on-chip data register that is triggered
Synchronous by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by the addresses presented during the previous clock rise of the read cycle. The
direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQPX are placed in a tri-state condition.
VDD
Power Supply Power supply inputs to the core of the device.
Document #: 38-05543 Rev. *E
Page 6 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Pin Definitions (continued)
Name
VSS
IO
Ground
Description
Ground for the core of the device.
VSSQ
IO Ground
Ground for the IO circuitry.
VDDQ
IO Power
Supply
Power supply for the IO circuitry.
MODE
Input-Static
Selects burst order. When tied to GND selects linear burst sequence. When tied to VDD or left
floating selects interleaved burst sequence. This is a strap pin and must remain static during
device operation. Mode pin has an internal pull up.
TDO
JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG
output
feature is not being utilized, this pin must be disconnected. This pin is not available on TQFP
Synchronous packages.
TDI
JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is
input
not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on
Synchronous TQFP packages.
TMS
JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is
input
not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on
Synchronous TQFP packages.
TCK
JTAGClock
NC
–
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be
connected to VSS. This pin is not available on TQFP packages.
No Connects. 36M, 72M, 144M, 288M, 576M and 1G are address expansion pins and are not
internally connected to the die.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 2.6 ns (250
MHz device).
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
supports secondary cache in systems utilizing a linear or
interleaved burst sequence. The interleaved burst order
supports Pentium® and i486™ processors. The linear burst
sequence is suited for processors that utilize a linear burst
sequence. The burst order is user selectable, and is
determined by sampling the MODE input. Accesses can be
initiated with either the processor address strobe (ADSP) or
the controller address strobe (ADSC). Address advancement
through the burst sequence is controlled by the ADV input. A
two-bit on-chip wraparound burst counter captures the first
address in a burst sequence and automatically increments the
address for the rest of the burst access.
Byte write operations are qualified with the byte write enable
(BWE) and byte write select (BWX) inputs. A global write
enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous chip selects (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
Document #: 38-05543 Rev. *E
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW,
(2) CE1, CE2, CE3 are all asserted active, and (3) the write
signals (GW, BWE) are all deserted HIGH. ADSP is ignored if
CE1 is HIGH. The address presented to the address inputs (A)
is stored into the address advancement logic and the address
register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
output registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 2.6 ns (250 MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported. Once
the SRAM is deselected at clock rise by the chip select and
either ADSP or ADSC signals, its output will tri-state
immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3 are all asserted active. The address
Page 7 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The write signals (GW, BWE, and BWX) and
ADV inputs are ignored during this first cycle.
automatically tri-stated whenever a write cycle is detected,
regardless of the state of OE.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the
corresponding address location in the memory array. If GW is
HIGH, then the write operation is controlled by BWE and BWX
signals.
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
provides a two-bit wraparound counter, fed by A1: A0, that
implements an interleaved or a linear burst sequence. The
interleaved burst sequence is designed specifically to support
Intel Pentium applications. The linear burst sequence is
designed to support processors that follow a linear burst
sequence. The burst sequence is user selectable through the
MODE input.
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
provides byte write capability that is described in the write
cycle descriptions table. Asserting the byte write enable input
(BWE) with the selected byte write (BWX) input, will selectively
write to only the desired bytes. Bytes not selected during a
byte write operation will remain unaltered. A synchronous
self-timed write mechanism has been provided to simplify the
write operations.
The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a
common IO device, the output enable (OE) must be deserted
HIGH before presenting data to the DQs inputs. Doing so will
tri-state the output drivers. As a safety precaution, DQs are
automatically tri-stated whenever a write cycle is detected,
regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following
conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP
is deserted HIGH, (3) CE1, CE2, CE3 are all asserted active,
and (4) the appropriate combination of the write inputs (GW,
BWE, and BWX) are asserted active to conduct a write to the
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV input is ignored during this cycle. If a global write is
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a byte
write is conducted, only the selected bytes are written. Bytes
not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
The CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F is a
common IO device, the output enable (OE) must be deserted
HIGH before presenting data to the DQs inputs. Doing so will
tri-state the output drivers. As a safety precaution, DQs are
Burst Sequences
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation sleep mode. Two
clock cycles are required to enter into or exit from this sleep
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the sleep mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the sleep mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
00
01
10
11
Second
Address
A1: A0
01
00
11
10
Third
Address
A1: A0
10
11
00
01
Fourth
Address
A1: A0
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
A1: A0
00
01
10
11
Second
Address
A1: A0
01
10
11
00
Third
Address
A1: A0
10
11
00
01
Fourth
Address
A1: A0
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
tZZS
tZZREC
tZZI
tRZZI
Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
ZZ Active to sleep current
ZZ Inactive to exit sleep current
Document #: 38-05543 Rev. *E
Test Conditions
ZZ > VDD – 0.2V
ZZ > VDD – 0.2V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
Min.
Max.
80
2tCYC
2tCYC
2tCYC
0
Unit
mA
ns
ns
ns
ns
Page 8 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Truth Table [4, 5, 6, 7, 8]
Operation
Add. Used
CE1
CE2
CE3
Deselect Cycle, Power Down
None
H
X
X
ZZ ADSP ADSC
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L-H
Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
L
X
L
ADV
X
WRITE OE CLK
X
X
L-H
DQ
Tri-State
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H
Tri-State
WRITE Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H
Tri-State
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
Tri-State
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
WRITE Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
WRITE Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Notes:
4. X = Don't Care, H = Logic HIGH, L = Logic LOW.
5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05543 Rev. *E
Page 9 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Truth Table for Read/Write [4, 9]
Function (CY7C1380D/CY7C1380F)
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A – (DQA and DQPA)
H
L
H
H
H
L
Write Byte B – (DQB and DQPB)
H
L
H
H
L
H
Write Bytes B, A
H
L
H
H
L
L
Write Byte C – (DQC and DQPC)
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D – (DQD and DQPD)
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Truth Table for Read/Write [4, 9]
GW
BWE
BWB
BWA
Read
Function (CY7C1382D/CY7C1382F)
H
H
X
X
Read
H
L
H
H
Write Byte A – (DQA and DQPA)
H
L
H
L
Write Byte B – (DQB and DQPB)
H
L
L
H
Write Bytes B, A
H
L
L
L
Write All Bytes
H
L
L
L
Write All Bytes
L
X
X
X
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active.
Document #: 38-05543 Rev. *E
Page 10 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test Data-In (TDI)
The CY7C1380D/CY7C1382D contains a TAP controller,
instruction register, boundary scan register, bypass register,
and ID register.
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. TDI
is internally pulled up and can be unconnected if the TAP is
unused in an application. TDI is connected to the most
significant bit (MSB) of any register. (See TAP Controller Block
Diagram.)
Disabling the JTAG Feature
Test Data-Out (TDO)
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternately be connected to VDD through a pull up resistor.
TDO must be left unconnected. Upon power up, the device will
come up in a reset state which will not interfere with the
operation of the device.
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See TAP Controller State Diagram.)
The CY7C1380D/CY7C1382D incorporates a serial boundary
scan test access port (TAP).This part is fully compliant with
1149.1. The TAP operates using JEDEC-standard 3.3V or
2.5V IO logic levels.
TAP Controller Block Diagram
TAP Controller State Diagram
0
Bypass Register
1
TEST-LOGIC
RESET
2 1 0
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCAN
1
SELECT
IR-SCAN
0
1
0
S election
TDO
Circuitr y
Identification Register
CAPTURE-IR
x . . . . . 2 1 0
Boundary Scan Register
SHIFT-IR
1
Instruction Register
31 30 29 . . . 2 1 0
0
SHIFT-DR
0
1
EXIT1-DR
1
EXIT1-IR
0
1
0
PAUSE-IR
1
TCK
TMS
0
PAUSE-DR
TAP CONTROLLER
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-DR
1
TDI
0
1
CAPTURE-DR
0
0
1
Selection
Circuitry
0
UPDATE-IR
1
0
The 0 or 1 next to each state represents the value of TMS at
the rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Test MODE SELECT (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The ball is pulled up
internally, resulting in a logic HIGH level.
Document #: 38-05543 Rev. *E
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and may be performed while the SRAM is operating.
At power up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned in and out of the SRAM test circuitry.
Only one register can be selected at a time through the
instruction register. Data is serially loaded into the TDI ball on
the rising edge of TCK. Data is output on the TDO ball on the
falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the TAP Controller Block
Diagram. Upon power up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
Page 11 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary ‘01’ pattern to
allow for fault isolation of the board-level serial test data path.
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
Bypass Register
The IDCODE instruction is loaded into the instruction register
upon power up or whenever the TAP controller is given a test
logic reset state.
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO balls when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z
instructions can be used to capture the contents of the input
and output ring.
The boundary scan order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions on page 15.
TAP Instruction Set
Overview
Eight different instructions are possible with the three bit
instruction register. All combinations are listed in Identification
Codes on page 15. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in detail below.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the Shift-DR controller
state.
IDCODE
The IDCODE instruction causes a vendor-specific 32-bit code
to be loaded into the instruction register. It also places the
Document #: 38-05543 Rev. *E
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. The SAMPLE Z command
places all SRAM outputs into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is
captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. As there is
a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output will undergo a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This will not harm the device, but
there is no guarantee as to the value that will be captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK# captured in the
boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required; that is, while data
captured is shifted out, the preloaded data is shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST Output Bus Tri-State
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit #85
(for 119-BGA package) or bit #89 (for 165-fBGA package).
Page 12 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it will directly control the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it will enable the output buffers to
drive the output bus. When LOW, this bit will place the output
bus into a High-Z condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the Shift-DR state. During Update-DR, the value
loaded into that shift-register cell will latch into the preload
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
preset HIGH to enable the output when the device is powered
up, and also when the TAP controller is in the Test-Logic-Reset
state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
Test Clock
(TCK)
t
t TH
t TMSS
t TMSH
t TDIS
t TDIH
TL
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range [10, 11]
Parameter
Description
Min.
Max.
Unit
20
MHz
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH time
20
ns
tTL
TCK Clock LOW time
20
ns
50
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
0
ns
ns
Setup Times
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
Notes:
10. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1ns.
Document #: 38-05543 Rev. *E
Page 13 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
2.5V TAP AC Test Conditions
3.3V TAP AC Test Conditions
Input pulse levels .................................................VSS to 3.3V
Input pulse levels................................................. VSS to 2.5V
Input rise and fall times ..................... ..............................1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels ...........................................1.5V
Input timing reference levels .................. ......................1.25V
Output reference levels...................................................1.5V
Output reference levels .................. ..............................1.25V
Test load termination supply voltage...............................1.5V
Test load termination supply voltage .................... ........1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.5V
1.25V
50Ω
50Ω
TDO
TDO
Z O= 50 Ω
Z O= 50 Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted) [12]
Parameter
VOH1
VOH2
VOL1
VOL2
VIH
VIL
IX
Description
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Test Conditions
Max.
Unit
IOH = –4.0 mA, VDDQ = 3.3V
2.4
V
IOH = –1.0 mA, VDDQ = 2.5V
2.0
V
IOH = –100 µA
VDDQ = 3.3V
2.9
V
VDDQ = 2.5V
2.1
V
IOL = 8.0 mA
IOL = 100 µA
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Min.
GND < VIN < VDDQ
VDDQ = 3.3V
0.4
V
VDDQ = 2.5V
0.4
V
VDDQ = 3.3V
0.2
V
VDDQ = 2.5V
0.2
V
VDDQ = 3.3V
2.0
VDD + 0.3
V
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
Note:
12. All voltages referenced to VSS (GND).
Document #: 38-05543 Rev. *E
Page 14 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Identification Register Definitions
CY7C1380D/CY7C1380F CY7C1382D/CY7C1382F
(512K x 36)
(1 Mbit x 18)
Instruction Field
Description
Revision Number (31:29)
000
000
Device Depth (28:24) [13]
01011
01011
Device Width (23:18) 119-BGA
101000
101000
Defines the memory type and
architecture.
Device Width (23:18) 165-FBGA
000000
000000
Defines the memory type and
architecture.
Cypress Device ID (17:12)
Cypress JEDEC ID Code (11:1)
Describes the version number.
Reserved for internal use.
100101
010101
Defines the width and density.
00000110100
00000110100
Allows unique identification of
SRAM vendor.
1
1
ID Register Presence Indicator (0)
Indicates the presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Instruction
3
3
Bypass
1
1
ID
32
32
Boundary Scan Order (119-ball BGA package)
85
85
Boundary Scan Order (165-ball FBGA package)
89
89
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.
SAMPLE Z
010
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use. This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
101
Do Not Use. This instruction is reserved for future use.
RESERVED
110
Do Not Use. This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Note:
13. Bit #24 is 1 in the register definitions for both 2.5v and 3.3v versions of this device.
Document #: 38-05543 Rev. *E
Page 15 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
119-Ball BGA Boundary Scan Order [14, 15]
Bit #
Ball ID
Bit #
1
H4
T4
23
2
24
3
T5
25
4
T6
26
5
R5
27
6
L5
28
Ball ID
Bit #
Ball ID
Bit #
Ball ID
F6
45
G4
67
L1
E7
46
A4
68
M2
D7
47
G3
69
N1
H7
48
C3
70
P1
G6
49
B2
71
K1
E6
50
B3
72
L2
7
R6
29
D6
51
A3
73
8
U6
30
C7
52
C2
74
N2
P2
9
R7
31
B7
53
A2
75
R3
10
T7
32
C6
54
B1
76
T1
11
P6
33
A6
55
C1
77
R1
12
N7
34
C5
56
D2
78
T2
13
M6
35
B5
57
E1
79
L3
14
L7
36
G5
58
F2
80
R2
15
K6
37
B6
59
G1
81
T3
16
P7
38
D4
60
H2
82
L4
17
N6
39
B4
61
D1
83
N4
18
L6
40
F4
62
E2
84
P4
19
K7
41
M4
63
G2
85
Internal
20
J5
42
A5
64
H1
21
H6
43
K4
65
J3
22
G7
44
E4
66
2K
Notes:
14. Balls which are NC (No Connect) are pre-set LOW.
15. Bit# 85 is pre-set HIGH.
Document #: 38-05543 Rev. *E
Page 16 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
165-Ball BGA Boundary Scan Order [14, 16]
Bit #
Ball ID
Bit #
Ball ID
Bit #
Ball ID
1
N6
31
D10
61
G1
2
N7
32
C11
62
D2
3
N10
33
A11
63
E2
4
P11
34
B11
64
F2
5
P8
35
A10
65
G2
6
R8
36
B10
66
H1
7
R9
37
A9
67
H3
8
P9
38
B9
68
J1
9
P10
39
C10
69
K1
10
R10
40
A8
70
L1
11
R11
41
B8
71
M1
12
H11
42
A7
72
J2
13
N11
43
B7
73
K2
14
M11
44
B6
74
L2
15
L11
45
A6
75
M2
16
K11
46
B5
76
N1
17
J11
47
A5
77
N2
18
M10
48
A4
78
P1
19
L10
49
B4
79
R1
20
K10
50
B3
80
R2
21
J10
51
A3
81
P3
22
H9
52
A2
82
R3
23
H10
53
B2
83
P2
24
G11
54
C2
84
R4
25
F11
55
B1
85
P4
26
E11
56
A1
86
N5
27
D11
57
C1
87
P6
28
G10
58
D1
88
R6
89
Internal
29
F10
59
E1
30
E10
60
F1
Note:
16. Bit# 89 is pre-set HIGH.
Document #: 38-05543 Rev. *E
Page 17 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Maximum Ratings
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Exceeding the maximum ratings may impair the useful life of
the device. For user guidelines, not tested.
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Storage Temperature ................................. –65°C to +150°C
Latch-up Current .................................................... >200 mA
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Operating Range
Supply Voltage on VDD Relative to GND ....... –0.3V to +4.6V
Ambient
Range
Temperature
VDD
VDDQ
Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V – 5%
to VDD
Industrial
–40°C to +85°C
Supply Voltage on VDDQ Relative to GND ...... –0.3V to +VDD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
VDD
Power Supply Voltage
VDDQ
IO Supply Voltage
VOH
VOL
VIH
VIL
IX
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[17, 18]
[17]
[17]
Min.
Max.
Unit
3.135
3.6
V
for 3.3V IO
3.135
VDD
V
for 2.5V IO
2.375
2.625
V
for 3.3V IO, IOH = –4.0 mA
2.4
V
for 2.5V IO, IOH = –1.0 mA
2.0
V
for 3.3V IO, IOL = 8.0 mA
0.4
V
for 2.5V IO, IOL = 1.0 mA
0.4
V
for 3.3V IO
2.0
VDD + 0.3V
V
for 2.5V IO
1.7
VDD + 0.3V
V
for 3.3V IO
–0.3
0.8
V
for 2.5V IO
–0.3
0.7
V
5
µA
5
µA
Input Leakage Current
except ZZ and MODE
GND ≤ VI ≤ VDDQ
–5
Input Current of MODE
Input = VSS
–30
Input = VDD
Input Current of ZZ
Input = VSS
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
µA
–5
30
Input = VDD
IOZ
µA
µA
5
µA
4.0-ns cycle, 250 MHz
350
mA
5.0-ns cycle, 200 MHz
300
mA
6.0-ns cycle, 167 MHz
275
mA
4.0-ns cycle, 250 MHz
160
mA
5.0-ns cycle, 200 MHz
150
mA
6.0-ns cycle, 167 MHz
–5
Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
140
mA
ISB2
Automatic CE Power
Down Current-CMOS
Inputs
VDD = Max, Device Deselected,
All speeds
VIN ≤ 0.3V or VIN > VDDQ – 0.3V, f = 0
70
mA
ISB3
Automatic CE
Power Down
Current—CMOS Inputs
VDD = Max, Device Deselected, or
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
f = fMAX = 1/tCYC
4.0-ns cycle, 250 MHz
135
mA
5.0-ns cycle, 200 MHz
130
mA
6.0-ns cycle, 167 MHz
125
mA
Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
All speeds
80
mA
ISB1
ISB4
Notes:
17. Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (pulse width less than tCYC/2).
18. TPower up: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05543 Rev. *E
Page 18 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Capacitance [19]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CIO
Input/Output Capacitance
100 TQFP
Package
Test Conditions
TA = 25°C, f = 1 MHz,
VDD = 3.3V.
VDDQ = 2.5V
119 BGA
Package
165 FBGA
Package
Unit
5
8
9
pF
5
8
9
pF
5
8
9
pF
100 TQFP
Package
119 BGA
Package
165 FBGA
Package
Unit
28.66
23.8
20.7
°C/W
4.08
6.2
4.0
°C/W
Thermal Resistance [19]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, in accordance with
EIA/JESD51.
AC Test Loads and Waveforms
3.3V IO Test Load
R = 317Ω
3.3V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 351Ω
VT = 1.5V
INCLUDING
JIG AND
SCOPE
(a)
2.5V IO Test Load
OUTPUT
RL = 50Ω
Z0 = 50Ω
VT = 1.25V
(a)
10%
(c)
ALL INPUT PULSES
VDDQ
INCLUDING
JIG AND
SCOPE
≤ 1 ns
(b)
GND
5 pF
90%
10%
90%
≤ 1 ns
R = 1667Ω
2.5V
OUTPUT
ALL INPUT PULSES
VDDQ
R = 1538Ω
(b)
10%
90%
10%
90%
≤ 1 ns
≤ 1 ns
(c)
Note:
19. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05543 Rev. *E
Page 19 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Characteristics Over the Operating Range [20, 21]
250 MHz
Parameter
tPOWER
Description
VDD(Typical) to the first Access
Min.
[22]
Max.
200 MHz
Min.
Max.
167 MHz
Min.
Max.
Unit
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.0
5
6
ns
tCH
Clock HIGH
1.7
2.0
2.2
ns
tCL
Clock LOW
1.7
2.0
2.2
ns
Output Times
tCO
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
Clock to Low-Z
[23, 24, 25]
tCHZ
Clock to High-Z
[23, 24, 25]
tOEV
OE LOW to Output Valid
tCLZ
tOELZ
tOEHZ
OE LOW to Output Low-Z
[23, 24, 25]
OE HIGH to Output High-Z
2.6
3.0
3.4
ns
1.0
1.3
1.3
ns
1.0
1.3
1.3
ns
2.6
3.0
3.4
ns
2.6
3.0
3.4
ns
0
[23, 24, 25]
0
2.6
0
3.0
ns
3.4
ns
Setup Times
tAS
Address Setup Before CLK Rise
1.2
1.4
1.5
ns
tADS
ADSC, ADSP Setup Before CLK Rise
1.2
1.4
1.5
ns
tADVS
ADV Setup Before CLK Rise
1.2
1.4
1.5
ns
tWES
GW, BWE, BWX Setup Before CLK Rise
1.2
1.4
1.5
ns
tDS
Data Input Setup Before CLK Rise
1.2
1.4
1.5
ns
tCES
Chip Enable SetUp Before CLK Rise
1.2
1.4
1.5
ns
tAH
Address Hold After CLK Rise
0.3
0.4
0.5
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.3
0.4
0.5
ns
tADVH
ADV Hold After CLK Rise
0.3
0.4
0.5
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.3
0.4
0.5
ns
tDH
Data Input Hold After CLK Rise
0.3
0.4
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.3
0.4
0.5
ns
Hold Times
Notes:
20. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
21. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
22. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
23. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms on page 19. Transition is measured ± 200
mV from steady-state voltage.
24. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
25. This parameter is sampled and not 100% tested.
Document #: 38-05543 Rev. *E
Page 20 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms
Read Cycle Timing [26]
t CYC
CLK
t
t
ADS
CH
t
CL
t
ADH
ADSP
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
t WES
A3
Burst continued with
new base address
tWEH
GW, BWE,
BWx
t CES
Deselect
cycle
tCEH
CE
t ADVS
tADVH
ADV
ADV
suspends
burst.
OE
t OEHZ
t CLZ
Data Out (Q)
Q(A1)
High-Z
t OEV
t CO
t OELZ
t DOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
t CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note:
26. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05543 Rev. *E
Page 21 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms (continued)
Write Cycle Timing [26, 27]
t CYC
CLK
tCH
t ADS
tCL
tADH
ADSP
t ADS
ADSC extends burst
tADH
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t WES tWEH
BWE,
BW X
t WES tWEH
GW
t CES
tCEH
CE
t
t
ADVS ADVH
ADV
ADV suspends burst
OE
t DS
Data In (D)
High-Z
t
OEHZ
tDH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
ata Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Note:
27. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05543 Rev. *E
Page 22 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms (continued)
Read/Write Cycle Timing [26, 28, 29]
tCYC
CLK
tCL
tCH
t ADS
tADH
t AS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
t WES tWEH
BWE,
BW X
t CES
tCEH
CE
ADV
OE
t DS
tCO
tDH
t OELZ
Data In (D)
High-Z
tCLZ
Data Out (Q)
High-Z
Q(A1)
Back-to-Back READs
tOEHZ
D(A3)
D(A5)
Q(A2)
Q(A4)
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
DON’T CARE
D(A6)
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes:
28. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
29. GW is HIGH.
Document #: 38-05543 Rev. *E
Page 23 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Switching Waveforms (continued)
ZZ Mode Timing [30, 31]
CLK
t
ZZ
I
t
t
ZZ
ZZREC
ZZI
SUPPLY
I
t RZZI
DDZZ
ALL INPUTS
DESELECT or READ Only
(except ZZ)
Outputs (Q)
High-Z
DON’T CARE
Notes:
30. Device must be deselected when entering ZZ mode. See Truth Table [4, 5, 6, 7, 8] on page 9 for all possible signal conditions to deselect the device.
31. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05543 Rev. *E
Page 24 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
Speed
(MHz)
167
Ordering Code
CY7C1380D-167AXC
Package
Diagram
Part and Package Type
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Operating
Range
Commercial
CY7C1382D-167AXC
CY7C1380F-167BGC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1382F-167BGC
CY7C1380F-167BGXC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-167BGXC
CY7C1380D-167BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1382D-167BZC
CY7C1380D-167BZXC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-167BZXC
CY7C1380D-167AXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Industrial
CY7C1382D-167AXI
CY7C1380F-167BGI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1382F-167BGI
CY7C1380F-167BGXI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-167BGXI
CY7C1380D-167BZI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1382D-167BZI
CY7C1380D-167BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-167BZXI
200
CY7C1380D-200AXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
CY7C1382D-200AXC
CY7C1380F-200BGC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1382F-200BGC
CY7C1380F-200BGXC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-200BGXC
CY7C1380D-200BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1382D-200BZC
CY7C1380D-200BZXC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-200BZXC
CY7C1380D-200AXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Industrial
CY7C1382D-200AXI
CY7C1380F-200BGI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1382F-200BGI
CY7C1380F-200BGXI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-200BGXI
CY7C1380D-200BZI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1382D-200BZI
CY7C1380D-200BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-200BZXI
Document #: 38-05543 Rev. *E
Page 25 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
250
CY7C1380D-250AXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
CY7C1382D-250AXC
CY7C1380F-250BGC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1382F-250BGC
CY7C1380F-250BGXC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-250BGXC
CY7C1380D-250BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1382D-250BZC
CY7C1380D-250BZXC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-250BZXC
CY7C1380D-250AXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Industrial
CY7C1382D-250AXI
CY7C1380F-250BGI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
CY7C1382F-250BGI
CY7C1380F-250BGXI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Pb-Free
CY7C1382F-250BGXI
CY7C1380D-250BZI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1382D-250BZI
CY7C1380D-250BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1382D-250BZXI
Document #: 38-05543 Rev. *E
Page 26 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Package Diagrams
Figure 1. 100-Pin Thin Plastic Quad Flat pack (14 x 20 x 1.4 mm) (51-85050)
16.00±0.20
1.40±0.05
14.00±0.10
100
81
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
0.10
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
Document #: 38-05543 Rev. *E
A
Page 27 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Package Diagrams (continued)
Figure 2. 119-ball BGA (14 x 22 x 2.4 mm) (51-85115)
51-85115-*B
Document #: 38-05543 Rev. *E
Page 28 of 30
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Package Diagrams (continued)
Figure 3. 165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)
165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D
BOTTOM VIEW
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 MØ0.05
CAB MC
PIN 1 CORNER
Ø0.25 M C A B
Ø0.50 -0.06
(165X)
PIN 1 CORNER
1
2
1
+0.14
4
2
5
3
6
4
7
5
8
6
9
7
10
11
8
9
11
10
11
10
9
11
8
10
7
9
6
8
5
7
Ø0.50 -0.06 (165X)
4
6
3 +0.14
2
5
4
1
3
2
1A
B
A
C
B
C
B
D
C
D
C
E
D
F
1.00
A
1.00
B
F
E
G
F
G
F
H
G
H
G
J
H
K
J
L
K
M
L
N
M
P
N
P
N
R
P
R
P
7.00
7.00
14.00
D
E
14.00
15.00±0.10
E
15.00±0.10
15.00±0.10
A
15.00±0.10
3
J
H
K
J
L
K
M
L
N
M
R
R
A
A
A
1.00
5.00
A
1.00
5.00
10.00
10.00
B
B
13.00±0.10
B
13.00±0.10
B
13.00±0.10
13.00±0.10
SEATING PLANE
NOTES :
NOTES
:
SOLDER
PAD TYPE
: NON-SOLDER MASK DEFINED (NSMD)
PACKAGE
WEIGHT
SOLDER
PAD: 0.475g
TYPE : NON-SOLDER MASK DEFINED (NSMD)
JEDEC REFERENCE
: MO-216
/ DESIGN 4.6C
PACKAGE WEIGHT
: 0.475g
PACKAGE
CODE
: BB0AC : MO-216 / DESIGN 4.6C
JEDEC
REFERENCE
PACKAGE CODE : BB0AC
51-85180-*A
0.35±0.06
C
0.35±0.06
0.36
0.36
SEATING PLANE
C
0.15 C
1.40 MAX.
1.40 MAX.
0.15(4X)
0.15 C
0.53±0.05
0.53±0.05
0.25
C
0.25 C
0.15(4X)
51-85180-*A
Intel and Pentium are registered trademarks, and i486 is a trademark of Intel Corporation. All product and company names
mentioned in this document are the trademarks of their respective holders.
Document #: 38-05543 Rev. *E
Page 29 of 30
© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for
the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended
to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1380D, CY7C1380F
CY7C1382D, CY7C1382F
Document History Page
Document Title: CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F, 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
Document Number: 38-05543
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
254515
See ECN
RKF
New data sheet
*A
288531
See ECN
SYT
Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for
non-compliance with 1149.1
Removed 225MHz and 133 MHz Speed Bins
Added Pb-free information for 100-Pin TQFP, 119 BGA and 165 FBGA Packages
Added comment of ‘Pb-free BG packages availability’ below the Ordering Information
*B
326078
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as per
JEDEC standard
Added description on EXTEST Output Bus Tri-State
Changed description on the Tap Instruction Set Overview and Extest
Changed Device Width (23:18) for 119-BGA from 000000 to 101000
Added separate row for 165 -FBGA Device Width (23:18)
Changed ΘJA and ΘJC for TQFP Package from 31 and 6 °C/W to 28.66 and 4.08
°C/W respectively
Changed ΘJA and ΘJC for BGA Package from 45 and 7 °C/W to 23.8 and 6.2 °C/W
respectively
Changed ΘJA and ΘJC for FBGA Package from 46 and 3 °C/W to 20.7 and 4.0 °C/W
respectively
Modified VOL, VOH test conditions
Removed comment of ‘Pb-free BG packages availability’ below the Ordering Information
Updated Ordering Information Table
*C
416321
See ECN
NXR
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage Current
on page# 18
Changed the IX current values of MODE on page # 18 from –5 µA and 30 µA
to –30 µA and 5 µA
Changed the IX current values of ZZ on page # 18 from –30 µA and 5 µA
to –5 µA and 30 µA
Changed VIH < VDD to VIH < VDDon page # 18
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*D
475009
See ECN
VKN
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC
Switching Characteristics table.
Updated the Ordering Information table.
*E
776456
See ECN
VKN
Added Part numbers CY7C1380F and CY7C1382F and its related information
Added footnote# 3 regarding Chip Enable
Updated Ordering Information table
Document #: 38-05543 Rev. *E
Page 30 of 30
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