TI1 BQ4802LYPWG4 Parallel real-time clock with cpu supervisor Datasheet

bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
PARALLEL REAL-TIME CLOCK WITH CPU SUPERVISOR AND
EXTERNAL SRAM NONVOLATILE MEMORY BACKUP
FEATURES
D Real-Time Clock Counts Seconds Through
D
D
D
D
D
D
D
D
D
APPLICATIONS
D
D
D
D
D
D
Centuries in BCD Format
– bq4802Y: 5-V Operation
– bq4802LY: 3.3-V Operation
On-Chip Battery-Backup Switchover Circuit
With Nonvolatile Control for External SRAM
Less Than 500 nA of Clock Operation Current
in Backup Mode
Microprocessor Reset With Push-Button
Override
Independent Watchdog Timer With
Programmable Time-Out Period
Power-Fail Interrupt Warning
Programmable Clock Alarm Interrupt Active
in Battery-Backup Mode
Programmable Periodic Interrupt
Battery-Low Warning
28-pin SOIC, TSSOP, and SNAPHAT Package
Options
TYPICAL APPLICATION
Telecommunications Base Stations
Servers
Handheld Data Collection Equipment
Medical Equipment
Handheld Instrumentation
Test Equipment
DESCRIPTION
The bq4802Y/bq4802LY real-time clock is a low-power
microprocessor peripheral that integrates a time-ofday clock, a century-based calendar, and a CPU supervisor, with package options including a 28-pin SOIC,
TSSOP, or SNAPHAT that requires the bq48SH-28x6
to complete the two-piece module. The bq4802Y/
bq4802LY is ideal for fax machines, copiers, industrial
control systems, point-of-sale terminals, data loggers,
and computers.
5 kΩ
VCC
bq4802
ADDRESS BUS
A0–A3
RST
TO µP
WDO
DATA BUS
FROM
ADDRESS
DECODE
LOGIC
DQ0–DQ7
CMOS SRAM
INT
CS
62256L
ADDRESS BUS
CEIN
DATA BUS
FROM µP
I/O LINE
A0–A3
VOUT
WDI
DQ0–DQ7
VCC
CEOUT
CE
OE WR
OE
READ/
WRITE
CONTROL
FROM µP
WE
X1
BC
3V
LITHIUM
CELL
32.768 kHz
CRYSTAL
X2
VSS
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright  2002, Texas Instruments Incorporated
bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION (CONTINUED)
The bq4802Y/bq4802LY provides direct connections
for a 32.768-kHz quartz crystal and a 3-V backup
battery. Through the use of the conditional chip enable
output (CEOUT) and battery voltage output (VOUT) pins,
the bq4802Y/bq4802LY can write-protect and make
non- volatile external SRAMs. The backup cell powers
the real-time clock and maintains SRAM information in
the absence of system voltage. The crystal and battery
are contained within the modules for a more integrated
solution.
The bq4802Y/bq4802LY contains a temperaturecompensated reference and comparator circuit that
monitors the status of its voltage supply. When the
bq4802Y/bq4802LY detects an out-of-tolerance
condition, it generates an interrupt warning and subsequently a microprocessor reset. The reset stays
active for 200 ms after VCC rises within tolerance, to
allow for power supply and processor stabilization. The
reset function also allows for an external push-button
override.
ORDERING INFORMATION
TA
OPERATION
0°C to +70°C
70°C
SOIC(1) (DW)
DEVICES
TSSOP(1) (PW)
SYMBOL
SNAPHAT(1)(2)(3) (DSH)
5V
bq4802YDW
bq4802YPW
bq4802YDSH
bq4802Y
3.3 V
bq4802LYDW
bq4802LYPW
bq4802LYDSH
bq4802LY
(1) The DW, PW and DSH packages are available taped and reeled. Add an R suffix to the device type (i.e., bq4802YDWR).
(2) The DSH package is available taped only.
(3) The bq48SH–28x6 should be ordered to complete the SNAPHAT module and is the same part number for both 3.3-V and 5-V modules.
CAUTION: Wave soldering of DSH package may cause damage to SNAPHAT sockets.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
bq4802Y
bq4802LY
Input voltage range, VCC, VT (VT ≤ VCC +0.3)
–0.3 V to 6.0 V
Operating temperature range, TJ
0°C to 70°C
Storage temperature range, Tstg
– 55°C to 125°C
Temperature under bias, TJbias
– 40°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300°C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Supply voltage
voltage, VCC
MIN
MAX
bq4802Y
4.5
5.5
bq4802LY
2.7
3.6
UNIT
V
Input low voltage, VIL
–0.3
0.8
V
Input high voltage, VIH
2.2
V
Backup cell voltage, VBC
2.4
VCC + 0.3
4.0
–0.3
0.4
V
2.2
VCC + 0.3
V
Push button reset input low, VBC
Push button reset input high, VPBRH
2
V
bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
ELECTRICAL CHARACTERISTICS
(TA = 25°C, VCC(min) ≤ VCC ≤ VCC(max) unless otherwise noted)
INPUT SUPPLY
PARAMETER
TEST CONDITIONS
ICC
Supply current
ISB1
Standby supply current
ICCB
Battery operation supply current
ILI
ILO
TYP
MAX
100% Minimum duty cycle,
CS = VIL, II/O = 0 mA
MIN
5
9
CS = VIH
3
CS = VCC – 0.2 V,
0 V ≤ VIN ≤ 0.2 V or VIN = VCC – 0.2 V
Input leakage current
VBC = 3 V, TA = 25°C,
No load at VOUT or CEOUT, II/O = 0 mA
VIN = VSS to VCC
Output leakage current
CS = VIH or OE = VIH or WE = VIL
VOUT(1)
VOUT(2)
Output voltage
IOUT = 80 mA,VCC > VBC
IOUT = 100 µA, VCC < VBC
VPFD
Power fail detect voltage
VSO
Supply switch over voltage
VBC > V(PFD)
VBC < V(PFD)
VRST
VINT
RST output voltage(1)
INT output voltage(1)
I(RST) = 4 mA
I(INT) = 4 mA
UNIT
mA
mA
1.5
0.5
µA
–1
1
µA
–1
1
µA
0.3
VCC-0.3
VBC-0.3
V
bq4802Y
4.30
4.37
4.5
bq4802LY
2.4
2.53
2.65
VPFD
VBC
V
V
0.4
V
0.4
V
(1) RST and INT are open drain outputs.
WATCHDOG
PARAMETER
I(WDIL)
I(WDIH)
Low-level watchdog input current
V(WDO)
WDO output voltage
TEST CONDITIONS
MIN
TYP
–50
–10
High-level watchdog input current
20
ISINK = 4 mA
ISOURCE = 2 mA
MAX
50
0.4
2.4
UNIT
µA
V
CRYSTAL SPECIFICATIONS (DT-26) OR EQUIVALENT)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
32.768
UNIT
fO
CL
Oscillation frequency
TP
k
Temperature turnover point
Q
Quality factor
R1
C0
Series resistance
45
kΩ
Shunt capacitance
1.1
1.8
pF
C0/C1
DL
Capacitance ratio
430
600
∆f/f0
Aging (first year at 25°C)
Load capacitance
kHz
6
20
25
Parabolic curvature constant
pF
30
–0.042
40,000
°C
ppm/°C
70,000
Drive level
1
1
µW
–
ppm
MAX
UNIT
CAPACITANCE
PARAMETER
II/O
CI
Input/output capacitance
Input capacitance
TEST CONDITIONS
VOut = 0 V
V=0V
MIN
TYP
7
5
pF
3
bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
AC TEST CONDITIONS, INPUT PULSE LEVELS VI = 0 V to 3.0 V, tR = tF = 5 NS, VREF = 1.5 V
3V
3V
962 Ω
962 Ω
DOUT
DOUT
510 Ω
100 pF
510 Ω
5 pF
Figure 2. Output Load B
Figure 1. Output Load A
OPERATING CHARACTERISTICS
READ CYCLE (TA = TOPR, VCC = 5 V)
PARAMETER
TEST CONDITIONS
MIN
MAX
200
UNIT
tRC
tAA
Read cycle time
ns
Address access time
Output load A
100
ns
tACS
tOE
Chip select access time
Output load A
100
ns
Output enable to output valid
Output load A
100
ns
tCLZ
tOLZ
Chip select to output low Z
Output load B
8
Output enable until output low Z
Output load B
0
tCHZ
tOHZ
Output enable until output high Z
Output load B
0
45
ns
Output disable until output high Z
Output load B
0
45
ns
tOH
Output hold from address change
Output load A
10
ns
ns
ns
READ CYCLE (TA = TOPR, VCC = 3.3 V)
PARAMETER
TEST CONDITIONS
MIN
MAX
tRC
tAA
Read cycle time
Address access time
Output load A
150
ns
tACS
tOE
Chip select access time
Output load A
150
ns
Output enable to output valid
Output load A
150
ns
tCLZ
tOHL
Chip select to output low Z
Output load B
15
Output enable until output low Z
Output load B
0
tCLH
tOLZ
Output enable until output high Z
Output load B
0
60
ns
Output disable until output high Z
Output load B
0
60
ns
tOH
Output hold from address change
Output load A
18
4
300
UNIT
ns
ns
ns
ns
bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
PIN ASSIGNMENTS
DW OR PW PACKAGE
(TOP VIEW)
VOUT
X1
X2
WDO
INT
RST
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
DSH PACKAGE
(TOP VIEW)
VCC
WE
CEIN
CEOUT
BC
WDI
OE
CS
VSS
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
VOUT
NC
NC
WDO
INT
RST
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
CEIN
CEOUT
NC
WDI
OE
CS
NC
DQ7
DQ6
DQ5
DQ4
DQ3
NC – No internal connection
Terminal Functions
TERMINAL
NAME
NO.
A0
10
A1
9
A2
8
A3
7
24(1)
BC
I/O
DESCRIPTION
A0 – A3 allow access to the 16 bytes
y
of real-time clock and control registers.
g
BC should be connected to a 3-V backup cell. A voltage within the VBC range on the BC pin should be present
upon power up to provide proper oscillator start-up. Not accessible in module packages.
CEIN
CEOUT
26
Input to the chip-enable gating circuit
25
CEOUT goes low only when CEIN is low and VCC is above the power fail threshold. If CEIN is low, and power fail
occurs, CEOUT stays low for 100 µs or until CEIN goes high, whichever occurs first.
CS
21
I
Chip-select input
DQ0
11
I
DQ0–DQ7
Q
Q provide x8 data for real-time clock information. These pins connect to the memory
y data bus.
DQ1
12
I
DQ2
13
I
DQ3
15
I
DQ4
16
I
DQ5
17
I
DQ6
18
I
DQ7
19
I
INT
5
INT goes low when a power fail, periodic, or alarm condition occurs. INT is an open-drain output.
OE
22
OE provides the read control for the RTC memory locations.
RST
6
RST goes low whenever VCC falls below the power fail threshold. RST remains low for 200 ms (typical) after
VCC crosses the threshold on power-up. The bq4802Y/bq4802LY also enters the reset cycle when RST is released
from being pulled low for more than 1 µs.
VCC
VOUT
28
I
5-V or 3.3-V input
1
O
VOUT provides the higher of VCC or VBC, switched internally, to supply external RAM.
Ground
VSS
14
20(1)
(1) This pin should be left unconnected (NC) when using the SNAPHAT (DSH) package.
5
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bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
Terminal Functions (Continued)
TERMINAL
NAME
NO.
WDI
23
WDO
4
WE
I/O
DESCRIPTION
I
WDI is a three-level input. If WDI remains either high or low for longer than the watchdog time-out period (1.5-s default),
WDO goes low. WDO remains low until the next transition at WDI. Leaving WDI unconnected disables the watchdog
function. WDI connects to an internal voltage divider between VOUT and VSS, which sets it to mid-supply when left
unconnected.
27
2(1)
3(1)
X1
X2
WDO goes low if WDI remains either high or low longer than the watchdog time-out period. WDO returns high on the
next transition at WDI. WDO remains high if WDI is unconnected.
WE provides the write control for the RTC memory locations.
Crystal
y
connection
FUNCTIONAL BLOCK DIAGRAM
Figure 3 is a block diagram of the bq4802Y/bq4802LY. The following sections describe the bq4802Y/bq4802LY
functional operation including clock interface, data-retention modes, power-on reset timing, watchdog timer
activation, and interrupt generation.
X1
X2
TimeBase
Oscillator
÷8
÷64
÷64
4
16:1 MUX
Control/Status
Registers
Clock/Calendar
Update
Clock/Calendar and
Alarm Registers
User Buffer
(16 Bytes)
Interrupt
Generator
INT
Watchdog
Transition
Detector
WDO
Power-Fail
Control, Battery
Switchover and
Reset Circuits
µP Bus
Interface
RST
VOUT
CEOUT
A0 – A3
CS
OE
WE
DQ0 – DQ7
WDI
Figure 3. Block Diagram
6
CEIN VCC
BC
bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
READ CYCLE TIMING DIAGRAMS
tRC
Address
tAA
tOH
DOUT
Previous Data Valid
Data Valid
NOTES: A. WE is held high for a read cycle.
B. Device is continuously selected: CS = OE = VIL.
Figure 4. Read Cycle No. 1 – Address Access
tRC
CS
tCHZ
tACS
tCLZ
DOUT
High-Z
High-Z
NOTES: A. WE is held high for a read cycle.
B. Device is continuously selected: CS = OE = VIL.
C. OE = VIL.
Figure 5. Read Cycle No. 2 – CS Access
tRC
Address
tAA
OE
tOE
tOHZ
tOLZ
DOUT
Data Valid
High-Z
High-Z
NOTES: A. WE is held high for a read cycle.
B. CS = VIL.
Figure 6. Read Cycle No. 3 – OE Access
7
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bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
WRITE CYCLE TIMING DIAGRAMS
tWC
Address
tAW
tWR1
tCW
CS
tAS
tWP
WE
tDW
DIN
tDH1
Data-In Valid
tWZ
DOUT
tOW
Data Undefined (see Note B)
High-Z
NOTES: A. WE or CS must be held high during address transition.
B. Because I/O may be active (OE low) during the period, data input signals of opposite polarity to the outputs must be applied.
C. If OE is high, the I/O pins remain in a state of high impedance.
Figure 7. Write Cycle No. 1 – WE Controlled
tWC
Address
tAW
tAS
tWR2
tCW
CS
tWP
WE
tDW
DIN
tDH2
Data-In Valid
tWZ
DOUT
NOTES: A.
B.
C.
D.
E.
Data Undefined (see Note B)
WE or CS must be held high during address transition.
Because I/O may be active (OE low) during the period, data input signals of opposite polarity to the outputs must be applied.
If OE is high, the I/O pins remain in a state of high impedance.
Either tWR1 or tWR2 must be met.
Either tDH1 or tDH2 must be met.
Figure 8. Write Cycle No. 2 – CS Controlled
8
High-Z
bq4802Y
bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
WRITE CYCLE (TA = TOPR, VCC = 5 V)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
tWC
tCW
Write cycle time
200
ns
Chip select to end of write
See Note 1
195
ns
tAW
tAS
Address valid to end of write
See Note 1
195
ns
Address setup time
30
ns
tWP
tWR1
Write pulse width
Measured from address valid to beginning of write(2)
Measured from beginning of write to end of write(1)
165
ns
5
ns
tWR2
tDW
Write recovery time (write cycle 2)
tDH1
tDH2
Data hold time (write cycle 1)
tWZ
tOW
Write recovery time (write cycle 1)
Measured from WE going high to end of write cycle(3)
Measured from CS going high to end of write cycle(3)
15
ns
Measured to first low-to-high transition of either CS or WE
Measured from WE going high to end of write cycle(4)
50
ns
0
ns
10
Write enable to output high Z
Measured from CS going high to end of write cycle(4)
I/O pins are in output state.(5)
Output active from end of write
I/O pins are in output state.(5)
Data valid to end of write
Data hold time (write cycle 2)
0
ns
45
0
ns
ns
(1) A write cycle ends at the earlier transition of CS going high and WE going high.
(2) A write occurs during the overlap of a low CS and a low WE. A write cycle begins at the later transition of CS going low or WE going low.
(3) Either tWR1 or tWR2 must be met.
(4) Either tDH1 or tDH2 must be met.
(5) If CS goes low simultaneously with WE going low or after WE going low, the outputs remain in high Z state.
WRITE CYCLE (TA = TOPR, VCC = 3.3 V)
PARAMETER
TEST CONDITIONS
tWC
tCW
Write cycle time
Chip select to end of write
tAW
tAS
Address valid to end of write
Address setup time
tWP
tWR1
Write pulse width
Measured from address valid to beginning of write(2)
Measured from beginning of write to end of write(1)
tWR2
tDW
Write recovery time (write cycle 2)
tDH1
tDH2
Data hold time (write cycle 1)
tWZ
tOW
Write recovery time (write cycle 1)
MIN
MAX
UNIT
300
ns
See Note 1
250
ns
See Note 1
250
ns
56
ns
280
ns
8
ns
Measured from WE going high to end of write cycle(3)
Measured from CS going high to end of write cycle(3)
25
ns
Measured to first low-to-high transition of either CS or WE
Measured from WE going high to end of write cycle(4)
80
ns
0
ns
15
Write enable to output high Z
Measured from CS going high to end of write cycle(4)
I/O pins are in output state.(5)
Output active from end of write
I/O pins are in output state.(5)
Data valid to end of write
Data hold time (write cycle 2)
0
0
ns
60
ns
ns
(1) A write cycle ends at the earlier transition of CS going high and WE going high.
(2) A write occurs during the overlap of a low CS and a low WE. A write cycle begins at the later transition of CS going low or WE going low.
(3) Either tWR1 or tWR2 must be met.
(4) Either tDH1 or tDH2 must be met.
(5) If CS goes low simultaneously with WE going low or after WE going low, the outputs remain in high Z state.
9
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bq4802LY
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SLUS464C – AUGUST 2000 – REVISED JUNE 2002
POWER-DOWN/POWER-UP TIMING (TA = TOPR)
PARAMETER
tF
tR
VCC slew rate fall time
VCC slew rate rise time
tPF
Interrupt delay time from VPFD
tWPT
Write protect time for external SRAM
Write-protect
tCSR
CS at VHI after power-up
power up
tRST
tCER
VPFD to RST active (reset active time-out period)
Device enable recovery time
TEST CONDITIONS
MIN
3.0 V to 0 V
300
VSO to VPDF(max)
100
Device enable propagation delay time to external SRAM
MAX
bq4802Y
6
24
bq4802LY
10
40
bq4802Y
See Note 1
90
100
125
bq4802LY
See Note 1
150
170
210
bq4802Y
See Note 2
100
200
300
bq4802LY
See Note 2
170
330
See Note 3
tCSR
tCSR
bq4802Y
tCED
TYP
bq4802LY
Output load A
tPBL
Push-button low time
(1) Delay after VCC slews down past VPFD before SRAM is write protected and RST activated.
(2) Internal write-protection period after VCC passes VPFD on power up.
(3) Time during which external SRAM is write protected after VCC passes VPFD on power up.
UNIT
µss
500
tCSR
tCSR
9
15
15
25
ms
ns
µs
1
CAUTION:NEGATIVE UNDERSHOOTS BELOW THE ABSOLUTE MAXIMUM RATING OF –0.3 V IN BATTERYBACKUP MODE MAY AFFECT DATA INTEGRITY.
tF
tR
tFS
VCC
VPFD(max)
VPFD
VCC
VPFD
2.8
VSO
VSO
tCSR
tPF
CS
tWPT
tCER
CEIN
tCED
tCED
VOHB
CEOUT
tRST
RST
INT
High-Z
NOTES: A. PWRIE set to 1 to enable power fail interrupt.
B. RST and INT are open drain and require and external pullup resistor.
Figure 9. Power-Down/Power-Up Timing Diagram
10
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bq4802LY
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tPBL
tRST
VPBRH
RST
VPBRL
Figure 10. Push-Button Reset Timing
11
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bq4802LY
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FUNCTIONAL DESCRIPTION
The following sections describe the bq4802Y/bq4802LY functional operation including clock interface, data-retention
modes, power-on reset timing, watchdog timer activation, and interrupt generation.
Table 1. Operational Truth Table
VCC
< VCC(MAX)
CS
OE
WE
VIH
VIL
X
X
X
CEIN
VIL
VIL
VIL
VIH
VIL
VIH
<VPFD(MIN>VSO
X
X
VIH
X
≤ VSO
X
X
X
> VCC(MIN)
CEOUT
CEIN
VOUT
VOUT1
VOUT1
MODE
DQ
POWER
Deselect
High Z
Standby
Write
Active
Read
CEIN
VOUT1
VOUT1
DIN
DOUT
Read
High-Z
Active
VOH
VOHB
VOUT1
VOUT2
Deselect
High-Z
CMOS standby
Deselect
High-Z
Battery-backup mode
CEIN
Active
ADDRESS MAP
The bq4802Y/bq4802LY provides 16 bytes of clock and control status registers. Table 1 is a map of the bq4802Y/bq4802LY
registers, and Table 2 describes the register bits.
Table 2. Clock and Control Register Map
Addr
(h)
D7
0
0
1
ALM1
2
0
3
ALM1
4
PM/AM
5
ALM1
PM/AM
D6
D5
D4
10-second digit
ALM0
10-second digit
10-minute digit
ALM0
10-minute digit
D2
D1
Range (h)
Register
1-second digit
00–59
Seconds
1 second digit
1-second
00 59
00–59
Seconds alarm
1-minute digit
00–59
Minutes
1 minutedigit
1-minute
digit
00 59
00–59
Minutes alarm
10-hour digit
1-hour digit
01–12AM
81–92PM
Hours
ALM0
10 hour digit
10-hour
1 hour digit
1-hour
01–12AM
81–92PM
Hours alarm
10-day digit
1-day digit
01–31
Day
1-day digit
01–31
Day alarm
01–07
Day of Week
1-month digit
01–12
Month
1-year digit
00–99
Year
0
0
7
ALM1
ALM0
8
0
0
0
0
9
0
0
0
10 mo.
10-day digit
0
10-year digit
day of week digit
B
(1)
WD2
WD1
WD0
RS3
RS2
RS1
RS0
–
Rates
C
(1)
(1)
(1)
(1)
AIE
PIE
PWRIE
ABE
–
Enables
D
(1)
(1)
(1)
(1)
AF
PF
PWRF
BVF
–
Flags
E
(1)
(1)
(1)
(1)
UTI
STOP
24/12
DSE
–
Control
00–99
Century
F
10-century digit
1-century digit
(1) Unused bits; cannot be written to and read as 0.
(2) Internal write-protection period after VCC passes VPFD on power up.
(3) Clock calendar data in BCD. Automatic leap year adjustment up to year 2100.
(4) PM/AM = 1 for PM and 0 for AM.
(5) DSE = 1 to enable daylight savings adjustment.
(6) 24/12 = 1 to enable 24–hour data representation and 0 for 12–hour data representation.
(7) Day of week coded as Sunday = 1 through Saturday = 7
(8) BVF = 1 for valid BC input
(9) STOP = 1 to turn the RTC on and 0 stops the RTC in battery-backup mode
12
D0
0
6
A
D3
bq4802Y
bq4802LY
www.ti.com
SLUS464C – AUGUST 2000 – REVISED JUNE 2002
Table 3. Clock and Control Register Map
BIT
DESCRIPTION
24/12
24- or 12-hour data representation
ABE
Alarm interrupt enable in battery-backup mode
AF
Alarm interrupt flag
AIE
Alarm interrupt enable
ALM0–ALM1
Alarm mask bits
BVF
Battery-valid flag
DSE
Daylight savings enable
PF
Periodic interrupt flag
PIE
Periodic interrupt enable
PM/AM
PM or AM indication
PWRF
Power-fail interrupt flag
PWRIE
Power-fail interrupt enable
RS0–RS3
Periodic interrupt rate
STOP
Oscillator stop and start
UTI
Update transfer inhibit
WD0–WD2
Watchdog time-out rate
CLOCK MEMORY INTERFACE
The bq4802Y/bq4802LY has the same interface for
clock/calendar and control information as standard
SRAM. To read and write to these locations, the user must
put the bq4802Y/bq4802LY in the proper mode and meet
the timing requirements.
READ MODE
The bq4802Y/bq4802LY is in read mode whenever OE
(output enable) is low and CS (chip select) is low. The
unique address, specified by the four address inputs,
defines which one of the 16 clock/calendar bytes is to be
accessed. The bq4802Y/bq4802LY makes valid data
available at the data I/O pins within tAA (address access
time). This occurs after the last address input signal is
stable, and providing the CS and OE (output enable)
access times are met. If the CS and OE access times are
not met, valid data is available after the latter of chip select
access time (tACS) or output enable access time (tOE).
CS and OE control the state of the eight three-state data
I/O signals. If the outputs are activated before tAA, the data
lines are driven to an indeterminate state until tAA. If the
address inputs are changed while CS and OE remain low,
output data remains valid for tOH (output data hold time),
but goes indeterminate until the next address access.
WRITE MODE
The bq4802Y/bq4802LY is in write mode whenever WE
and CS are active. The start of a write is referenced from
the latter-occurring falling edge of WE or CS. A write is
terminated by the earlier rising edge of WE or CS. The
addresses must be held valid throughout the cycle. CS or
WE must return high for a minimum of tWR2 from CS or
tWR1 from WE prior to the initiation of another read or write
cycle.
Data-in must be valid tDW prior to the end of write and
remain valid for tDH1 or tDH2 afterward. OE should be kept
high during write cycles to avoid bus contention; although,
if the output bus has been activated by a low on CS and
OE, a low on WE disables the outputs tWZ after WE falls.
READING THE CLOCK
Once every second, the user-accessible clock/calendar
locations are updated simultaneously from the internal
real-time counters. To prevent reading data in transition,
updates to the bq4802Y/bq4802LY clock registers should
be halted. Updating is halted by setting the update transfer
inhibit (UTI) bit D3 of the control register E. As long as the
UTI bit is 1, updates to user-accessible clock locations are
inhibited. Once the frozen clock information is retrieved by
reading the appropriate clock memory locations, the UTI
bit should be reset to 0 in order to allow updates to occur
from the internal counters. Because the internal counters
are not halted by setting the UTI bit, reading the clock
locations has no effect on clock accuracy. Once the UTI bit
is reset to 0, the internal registers update within one
second the user-accessible registers with the correct time.
A halt command issued during a clock update allows the
update to occur before freezing the data.
SETTING THE CLOCK
The UTI bit must also be used to set the
bq4802Y/bq4802LY clock. Once set, the locations can be
written with the desired information in BCD format.
Resetting the UTI bit to 0 causes the written values to be
transferred to the internal clock counters and allows
updates to the user-accessible registers to resume within
one second.
STOPPING AND STARTING THE CLOCK
OSCILLATOR
The bq4802Y/bq4802LY clock can be programmed to turn
off when the part goes into battery back-up mode by setting
STOP to 0 prior to power down. If the board using the
bq4802Y/bq4802LY is to spend a significant period of time
in storage, the STOP bit can be used to preserve some
battery capacity. STOP set to 1 keeps the clock running
when VCC drops below VSO. With VCC greater than VSO,
the bq4802Y/bq4802LY clock runs regardless of the state
of STOP.
POWER-DOWN/POWER-UP CYCLE
The bq4802Y/bq4802LY continuously monitors VCC for
out-of-tolerance. During a power failure, when VCC falls
below VPFD, the bq4802Y/bq4802LY write-protects the
clock and storage registers. The power source is switched
to BC when VCC is less than VPFD and BC is greater than
VPFD, or when VCC is less than VBC and VBC is less than
13
bq4802Y
bq4802LY
www.ti.com
SLUS464C – AUGUST 2000 – REVISED JUNE 2002
VPFD. RTC operation and storage data are sustained by a
valid backup energy source. When VCC is above VPFD, the
power source is VCC. Write-protection continues for tCSR
time after VCC rises above VPFD.
An external CMOS static RAM is battery-backed using the
VOUT and chip enable output pins from the bq4802Y/
bq4802LY. As the voltage input VCC slews down during a
power failure, the chip enable output, CEOUT, is forced
inactive independent of the chip enable input CEIN.
This activity unconditionally write-protects the external
SRAM as VCC falls below VPFD. If a memory access is in
progress to the external SRAM during power-fail
detection, that memory cycle continues to completion
before the memory is write-protected. If the memory cycle
is not terminated within time tWPT, the chip enable output
is unconditionally driven high, write-protecting the
controlled SRAM.
As the supply continues to fall past VPFD, an internal
switching device forces VOUT to the external backup
energy source. CEOUT is held high by the VOUT energy
source.
During power up, VOUT is switched back to the main supply
as VCC rises above the backup cell input voltage sourcing
VOUT. If VPFD < VBC on the bq4802Y/bq4802LY the switch
to the main supply occurs at VPFD. CEOUT is held inactive
for time tCER (200-ms maximum) after the power supply
has reached VPFD, independent of the CEIN input, to allow
for processor stabilization.
During power-valid operation, the CEIN input is passed
through to the CEOUT output with a propagation delay of
less than 12 ns. Figure 2 shows the hardware hookup for
the external RAM, battery, and crystal.
A primary backup energy source input is provided on the
bq4802Y/bq4802LY. The BC input accepts a 3-V primary
battery, typically some type of lithium chemistry. Since the
bq4802Y/bq4802LY provides for reverse battery charging
protection, no diode or current limiting resistor is needed
in series with the cell. To prevent battery drain when there
is no valid data to retain, VOUT and CEOUT are internally
isolated from BC by the initial connection of a battery.
Following the first application of VCC above VPFD, this
isolation is broken, and the backup cell provides power to
VOUT and CEOUT for the external SRAM. The crystal
should be located as close to X1 and X2 as possible and
meet the specifications in the crystal specifications section
of the electrical characteristics tables. With the specified
crystal, the bq4802Y/bq4802LY RTC is accurate to within
one minute per month at room temperature. In the absence
of a crystal, a 32.768-kHz waveform can be fed into X1 with
X2 grounded. The power source and crystal are integrated
into the SNAPHAT modules.
14
Power-On Reset
The bq4802Y/bq4802LY provides a power-on reset, which
pulls the RST pin low on power down and remains low on
power up for tRST after VCC passes VPFD. With valid
battery voltage on BC, RST remains valid for VCC = VSS.
Push-Button Reset
The bq4802Y/bq4802LY also provides a push-button
override to the reset when the device is not already in a
reset cycle. When the RST pin is released after being
pulled low for 1 µs then the RST stays low for 200 ms
(typical).
WATCHDOG TIMER
The watchdog monitors microprocessor activity through
the watchdog input (WDI). To use the watchdog function,
connect WDI to a bus line or a microprocessor I/O line. If
WDI remains high or low for longer than the watchdog
time-out period (1.5 seconds default), the bq4802Y/
bq4802LY asserts WDO and RST.
Watchdog Input
The bq4802Y/bq4802LY resets the watchdog timer if a
change of state (high-to-low, low-to-high, or a minimum
100 ns pulse) occurs at the watchdog input (WDI) during
the watchdog period. The watchdog time-out is set by
WD0 – WD2 in register B. The bq4802Y/bq4802LY
maintains the watchdog time-out programming through
power cycles. The default state (no valid battery power) of
WD0 – WD2 is 000 or 1.5 s on power up. Table 3 shows
the programmable watchdog time-out rates. The
watchdog time-out period immediately after a reset is
equal to the programmed watchdog time-out.
To disable the watchdog function, leave WDI floating. An
internal resistor network (100-kΩ equivalent impedance at
WDI) biases WDI to approximately 1.6 V. Internal
comparators detect this level and disable the watchdog
timer. When VCC is below the power-fail threshold, the
bq4802Y/bq4802LY disables the watchdog function and
disconnects WDI from its internal resistor network, thus
making it high impedance.
Watchdog Output
The watchdog output (WDO) remains high if there is a
transition or pulse at WDI during the watchdog timeout
period. The bq4802Y/bq4802LY disables the watchdog
function and WDO is a logic high when VCC is below the
power fail threshold, battery-backup mode is enabled, or
WDI is an open circuit. In watchdog mode, if no transition
occurs at WDI during the watchdog time-out period, the
bq4802Y/bq4802LY asserts RST for the reset time-out
period t1. WDO goes low and remains low until the next
transition at WDI. If WDI is held high or low indefinitely,
RST generates pulses (t1 seconds wide) every t3
seconds. Figure 11 shows the watchdog timing.
bq4802Y
bq4802LY
www.ti.com
SLUS464C – AUGUST 2000 – REVISED JUNE 2002
WDI
WDO
t2
RST
t1
t1
t3
Figure 11. Watchdog Time-Out Period and Reset Active Time
Table 5. Periodic Interrupt Rates
Table 4. Watchdog and Reset Timeout Rates
WATCHDOG
TIMEOUT PERIOD
RESET TIMEOUT
PERIOD
WD2
WD1
WD0
0
0
0
1.50 s
0.25 ms
RS3
RS2
RS1
RS0
0
0
1
23.4375 ms
3.9063 ms
0
0
0
0
NONE
0
1
0
46.875 ms
7.8125 ms
0
0
0
1
30.5175 µs
0
1
1
93.750 ms
15.625 ms
0
0
1
0
61.035 µs
1
0
0
187.5 ms
31.25 ms
0
0
1
1
122.070 µs
1
0
1
375 ms
62.5 ms
0
1
0
0
244.141 µs
1
1
0
750 ms
125 ms
0
1
0
1
488.281 µs
0.5 s
0
1
1
0
976.5625 µs
0
1
1
1
1.95315 ms
1
0
0
0
3.90625 ms
1
0
0
1
7.8125 ms
1
0
1
0
15.625 ms
1
0
1
1
31.25 ms
1
1
0
0
62.5 ms
1
1
0
1
125 ms
1
1
1
0
250 ms
1
1
1
1
500 ms
1
1
1
3.0 s
INTERRUPTS
The bq4802Y/bq4802LY allows three individually selected
interrupt events to generate an interrupt request on the INT
pin. These three interrupt events are:
D The periodic interrupt, programmable to occur once
every 30.5 µs to 500 ms.
D The alarm interrupt, programmable to occur once per
second to once per month.
D The power-fail interrupt, which can be enabled to be
asserted when the bq4802Y/bq4802LY detects a
power failure.
An individual interrupt-enable bit in register C, the
interrupts register, enables the periodic, alarm and
power-fail interrupts. When an event occurs, its event flag
bit in the flags register, register D, is set. If the
corresponding event enable bit is also set, then an
interrupt request is generated. Reading the flags register
clears all flag bits and makes INT high impedance. To reset
the flag register, the bq4802Y/bq4802LY addresses must
be held stable at register D for at least 50 ns to avoid
inadvertent resets.
Periodic Interrupt
Bits RS3 – RS0 in the interrupt register program the rate
for the periodic interrupt. The user can interpret the
interrupt in two ways, either by polling the flags register for
PF assertion or by setting PIE so that INT goes active
when the bq4802Y/bq4802LY sets the periodic flag.
Reading the flags register resets the PF bit and returns INT
to the high-impedance state. Table 5 shows the periodic
rates.
REGISTER BITS
PERIODIC
INTERRUPT
PERIOD
ALARM INTERRUPT
Registers 1, 3, 5, and 7 program the real-time clock alarm.
During each update cycle, the bq4802Y/bq4802LY
compares the date, hours, minutes, and seconds in the
clock registers with the corresponding alarm registers. If a
match between all the corresponding bytes is found, the
alarm flag AF in the flags register is set. If the alarm
interrupt is enabled with AIE, an interrupt request is
generated on INT. The alarm condition is cleared by a read
to the flags register. ALM1 – ALM0 in the alarm registers,
mask each alarm compare byte. Setting ALM1 (D7) and
ALM0 (D6) to 1 masks an alarm byte. Alarm byte masking
can be used to select the frequency of the alarm interrupt,
according to Table 6. The alarm interrupt can be made
active while the bq4802Y/bq4802LY is in the batterybackup mode by setting ABE in the interrupts register.
Normally, the INT pin goes high-impedance during battery
backup. With ABE set, INT is driven low if an alarm
condition occurs and the AIE bit is set.
15
bq4802Y
bq4802LY
www.ti.com
SLUS464C – AUGUST 2000 – REVISED JUNE 2002
Table 6. Alarm Frequency
1h
3h
5h
7h
ALM1–ALM0 ALM1–ALM0 ALM1–ALM0 ALM1–ALM0
ALARM FREQUENCY
1
1
1
1
Once per second
0
1
1
1
Once per minute when seconds match
0
0
1
1
Once per hour, when minutes and seconds match
0
0
0
1
Once per day, when hours, minutes and seconds match
0
0
0
0
When date, hours minutes and seconds match
POWER–FAIL INTERRUPT
BATTERY–LOW WARNING
When VCC falls to the power-fail-detect point, the
power-fail flag PWRF is set. If the power-fail interrupt
enable bit (PWRIE) is also set, then INT is asserted low.
The power-fail interrupt occurs tWPT before the
bq4802Y/bq4802LY generates a reset and deselects.
The bq4802Y/bq4802LY checks the battery on power-up.
When the battery voltage is approximately 2.1 V, the
battery valid flag BVF in the flags register is set to a 0
indicating that clock and RAM data may be invalid.
16
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jan-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package Qty
Drawing
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
BQ4802LYDSH
OBSOLETE
SOP
DSH
28
TBD
Call TI
Call TI
0 to 70
4802LYDSH
BQ4802LYDW
ACTIVE
SOIC
DW
28
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYDW
BQ4802LYDWG4
ACTIVE
SOIC
DW
28
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYDW
BQ4802LYDWR
ACTIVE
SOIC
DW
28
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYDW
BQ4802LYDWRG4
ACTIVE
SOIC
DW
28
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYDW
BQ4802LYPW
ACTIVE
TSSOP
PW
28
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYPW
BQ4802LYPWG4
ACTIVE
TSSOP
PW
28
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYPW
BQ4802LYPWR
ACTIVE
TSSOP
PW
28
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYPW
BQ4802LYPWRG4
ACTIVE
TSSOP
PW
28
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802LYPW
BQ4802YDW
ACTIVE
SOIC
DW
28
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802YDW
BQ4802YDWG4
ACTIVE
SOIC
DW
28
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802YDW
BQ4802YDWR
ACTIVE
SOIC
DW
28
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802YDW
BQ4802YDWRG4
ACTIVE
SOIC
DW
28
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802YDW
BQ4802YPW
ACTIVE
TSSOP
PW
28
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802YPW
BQ4802YPWG4
ACTIVE
TSSOP
PW
28
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
4802YPW
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jan-2013
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Only one of markings shown within the brackets will appear on the physical device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Feb-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
BQ4802LYDWR
SOIC
DW
28
1000
330.0
32.4
11.35
18.67
3.1
16.0
32.0
Q1
BQ4802YDWR
SOIC
DW
28
1000
330.0
32.4
11.35
18.67
3.1
16.0
32.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Feb-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ4802LYDWR
SOIC
DW
28
1000
367.0
367.0
55.0
BQ4802YDWR
SOIC
DW
28
1000
367.0
367.0
55.0
Pack Materials-Page 2
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