Microsemi APTGT300DA170D3G Boost chopper trench field stop igbt power module Datasheet

APTGT300DA170D3G
Boost chopper
Trench + Field Stop IGBT
Power Module
VCES = 1700V
IC = 300A @ Tc = 80°C
Application
Q2
3
•
•
•
1
Features
•
6
7
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
2
•
•
•
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 125°C
600A@1650V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
September, 2008
IC
Max ratings
1700
400
300
600
±20
1470
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT300DA170D3G – Rev 1
Symbol
VCES
APTGT300DA170D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 300A
Tj = 125°C
VGE = VCE , IC = 12 mA
VGE = 20V, VCE = 0V
5.2
Typ
2.0
2.4
5.8
Max
Unit
3
2.5
mA
6.4
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn On Energy
Eoff
Turn Off Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
VGE=±15V, IC=300A
VCE=900V
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.7Ω
VGE = ±15V
Tj = 25°C
VBus = 900V
Tj = 125°C
IC = 300A
Tj = 25°C
RG = 4.7Ω
Tj = 125°C
VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C
Min
Test Conditions
Min
Typ
27
0.9
nF
3.5
µC
280
80
850
ns
120
300
100
1000
ns
200
71
105
64
94
mJ
1200
A
Reverse diode ratings and characteristics
Maximum Peak Repetitive Reverse Voltage
IRRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
Max
1700
VR=1700V
IF = 300A
IF = 300A
VR = 900V
di/dt =3500A/µs
V
Tj = 25°C
750
Tj = 125°C
1000
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
300
1.8
1.9
385
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
490
76
124
35
70
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Unit
µA
A
2.2
V
September, 2008
VRRM
Typ
ns
µC
mJ
2-5
APTGT300DA170D3G – Rev 1
Symbol Characteristic
APTGT300DA170D3G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
For terminals
To Heatsink
M6
M6
3500
-40
-40
-40
3
3
Typ
Max
0.085
0.13
Unit
°C/W
V
150
125
125
5
5
350
°C
N.m
g
D3 Package outline (dimensions in mm)
1°
A
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3-5
APTGT300DA170D3G – Rev 1
September, 2008
DÉTAIL A
APTGT300DA170D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
600
600
TJ = 125°C
500
TJ=25°C
VGE=20V
450
IC (A)
IC (A)
400
TJ=125°C
300
VGE=13V
300
VGE=15V
200
150
VGE=9V
100
0
0
0
0.5
1
1.5 2 2.5
VCE (V)
3
3.5
4
0
TJ=25°C
VCE = 900V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
225
E (mJ)
400
4
TJ=125°C
300
Eon
Eoff
150
75
TJ=125°C
Err
100
0
0
5
6
7
8
9
10
0
11
100
Switching Energy Losses vs Gate Resistance
400
500
600
700
VCE = 900V
VGE =15V
IC = 300A
TJ = 125°C
600
Eon
500
IC (A)
E (mJ)
300
Reverse Bias Safe Operating Area
400
300
200
IC (A)
VGE (V)
200
Eoff
400
300
VGE=15V
TJ=125°C
RG=4.7Ω
200
100
100
Err
0
0
5
10
15
20
25
30
Gate Resistance (ohms)
0.07
0.06
0.05
400
800
1200
1600
2000
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.09
0.08
0
35
IGBT
0.9
September, 2008
0
Thermal Impedance (°C/W)
5
0.7
0.5
0.04
0.03
0.3
0.02
0.01
0
0.00001
0.1
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT300DA170D3G – Rev 1
IC (A)
3
VCE (V)
300
500
200
2
Energy losses vs Collector Current
Transfert Characteristics
600
1
APTGT300DA170D3G
Forward Characteristic of diode
600
VCE=900V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
ZVS
15
ZCS
10
500
TJ=25°C
400
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
20
TJ=125°C
300
200
5
hard
switching
TJ=125°C
100
0
0
0
100
200
300
0
400
0.5
IC (A)
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.14
0.12
0.9
0.1
0.7
0.08
Diode
0.5
0.06
0.04
0.02
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT300DA170D3G – Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
September, 2008
rectangular Pulse Duration (Seconds)
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