AP60N03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
▼ Fast Switching
▼ Simple Drive Requirement
30V
RDS(ON)
13.5mΩ
ID
G
▼ RoHS Compliant
BVDSS
55A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03GJ) is available for low-profile applications.
D S
TO-252(H)
G
D
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
55
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
35
A
215
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
62.5
W
Linear Derating Factor
0.5
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200602051-1/4
AP60N03GH/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=28A
-
11.5
13.5
mΩ
VGS=4.5V, ID=22A
-
18
20
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=28A
-
30
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=28A
-
22.4
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
Min.
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
14
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
7.4
-
ns
tr
Rise Time
ID=28A
-
81
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=0.53Ω
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
440
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
-
-
55
A
-
-
215
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=55A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP60N03GH/J
150
200
10V
8.0V
ID , Drain Current (A)
T C =25 C
10V
8.0V
o
T C =150 C
ID , Drain Current (A)
o
150
6.0V
100
6.0V
100
50
V G =4.0V
V G =4.0V
50
0
0
0
2
4
6
8
0
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
20
I D =28A
I D =28A
V G =10V
1.6
T C =25 o C
Normalized RDS(ON)
18
RDS(ON) (mΩ)
2
16
14
12
1.4
1.2
1
0.8
0.6
10
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
100
3
10
VGS(th) (V)
IS (A)
2
T j =150 o C
T j =25 o C
1
1
0.1
0
0.01
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP60N03GH/J
f=1.0MHz
14
10000
I D =28A
VGS , Gate to Source Voltage (V)
12
V DS =16V
V DS =20V
V DS =24V
10
C (pF)
8
6
C iss
1000
C oss
4
2
C rss
0
100
0
5
10
15
20
25
30
35
40
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
ID (A)
10us
100us
1ms
10
T c =25 o C
Single Pulse
10ms
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
100ms
1
0.01
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4