Diodes DMP2004WK-7 P-channel enhancement mode field effect transistor Datasheet

DMP2004WK
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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NEW PRODUCT
Features
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•
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•
Mechanical Data
•
•
Low On-Resistance
Very Low Gate Threshold Voltage VGS(th) < 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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Drain
SOT-323
D
Gate
ESD PROTECTED
Gate
Protection
Diode
TOP VIEW
G
TOP VIEW
Equivalent Circuit
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
ID
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Thermal Characteristics
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1.
2.
3.
4.
Value
-20
±8
-400
-1.4
Units
V
V
mA
A
Value
250
500
-55 to +150
Units
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
S
Source
Symbol
Pd
RθJA
Tj, TSTG
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
±1.0
V
μA
μA
VGS = 0V, ID = -250mA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
⎯
0.7
1.1
1.7
-1.0
V
0.9
1.4
2.0
Ω
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = -0.2A
VGS = 0V, IS = -115mA
RDS (ON)
⎯
|Yfs|
VSD
200
-0.5
⎯
⎯
⎯
-1.2
mS
V
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
175
30
20
pF
pF
pF
Test Condition
VDS = -16V, VGS = 0V
f = 1.0MHz
Device mounted on FR-4 PCB.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMP2004WK
Document number: DS30931 Rev. 4 - 2
1 of 4
www.diodes.com
December 2007
© Diodes Incorporated
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
0
0
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-VGS(th), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMP2004WK
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs.
Drain Current
DMP2004WK
Document number: DS30931 Rev. 4 - 2
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
2 of 4
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December 2007
© Diodes Incorporated
NEW PRODUCT
DMP2004WK
1.1
1.0
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
-ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
Ordering Information
(Note 5)
Part Number
DMP2004WK-7
Notes:
Case
SOT-323
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
PAB
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
YM
Marking Information
PAB = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
2008
V
Feb
2
DMP2004WK
Document number: DS30931 Rev. 4 - 2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
3 of 4
www.diodes.com
Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
December 2007
© Diodes Incorporated
DMP2004WK
Package Outline Dimensions
A
B C
TOP VIEW
NEW PRODUCT
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
0°
8°
α
All Dimensions in mm
G
H
K
M
J
D
L
F
Suggested Pad Layout
Y
Z
G
C
X
Dimensions Value (in mm)
Z
2.8
G
1.0
X
0.7
Y
0.9
C
1.9
E
0.65
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMP2004WK
Document number: DS30931 Rev. 4 - 2
4 of 4
www.diodes.com
December 2007
© Diodes Incorporated
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