VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 (A) • High voltage (up to 1600 V) • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature TO-247AC 1 (K) (G) 3 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Available APPLICATIONS PRODUCT SUMMARY Package TO-247AC Diode variation Single SCR IT(AV) 20 A VDRM/VRRM 1600 V • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery charge DESCRIPTION VTM 1.3 V IGT 45 mA TJ - 40 °C to 125 °C The VS-30TPS16... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 20 A IRMS 30 VRRM/VDRM 1600 V ITSM 300 A 1.3 V 500 V/μs 20 A, TJ = 25 °C VT dV/dt 150 A/μs - 40 to 125 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA 1600 1700 10 dI/dt TJ VOLTAGE RATINGS PART NUMBER VS-30TPS16PbF, VS-30TPS16-M3 Revision: 18-Jun-13 Document Number: 94387 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 310 10 ms sine pulse, no voltage reapplied 442 4420 I2t Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 20 A, TJ = 25 °C Threshold voltage Maximum reverse and direct leakage current Maximum holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C UNITS 20 30 Maximum I2t for fusing On-state slope resistance VALUES A A2s A2s 1.3 V 12 m 1.0 V 0.5 10 150 mA Anode supply = 6 V, resistive load, TJ = 25 °C 200 TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 500 V/µs 150 A/µs VALUES UNITS TRIGGERING PARAMETER TEST CONDITIONS SYMBOL PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 18-Jun-13 TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 µs 110 Document Number: 94387 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heatsink RthCS TEST CONDITIONS VALUES UNITS - 40 to 125 °C 0.8 DC operation Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque 30TPS.. Series R thJC (DC) = 0.8 °C/ W 120 Conduction Angle 110 30° 60° 90° 100 120° 180° 90 0 5 10 15 20 25 Maximum Average On-state Power Loss (W) Case style TO-247AC (JEDEC) 30TPS16 60 180° 120° 90° 60° 30° 50 40 RMS Limit 30 20 Conduction Angle 30TPS.. Series TJ= 125°C 10 0 0 5 10 15 20 25 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics 130 30TPS.. Series RthJC (DC) = 0.8 °C/ W 120 110 Conduction Period 100 30° 90 60° 90° 120° 180° DC 80 0 5 10 15 20 25 30 35 Maximum Average On-state Power Loss (W) Maximum Allow able Case Temperature (°C) Maximum Allowable Case Temperature (°C) Marking device 130 °C/W 40 80 DC 180° 120° 90° 60° 30° 60 40 RMSLimit Conduction Period 20 30TPS.. Series TJ = 125°C 0 0 10 20 30 40 50 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 18-Jun-13 Document Number: 94387 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16PbF, VS-30TPS16-M3 Vishay Semiconductors 280 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 260 Initial TJ = 125°C @60 Hz 0.0083 s 240 @50 Hz 0.0100 s 220 200 180 160 140 30TPS.. Series 120 1 10 300 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com 280 260 240 Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ= 125°C No Voltage Reap plied Rated VRRMReapplied 220 200 180 160 140 30TPS.. Series 120 0.01 100 Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 TJ= 25°C TJ= 125°C 100 10 30TPS.. Series 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value (DC Operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 0.1 D = 0.08 Single Pulse 30TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 18-Jun-13 Document Number: 94387 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) 0.01 (2) (1) Frequenc y Limited by PG(AV) 30TPS.. Series 0.1 0.001 (3) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 30 T P S 16 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: T = Thyristor 4 - Package: P = TO-247 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating (16 = 1600 V) 7 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30TPS16PbF 25 500 Antistatic plastic tubes VS-30TPS16-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 18-Jun-13 www.vishay.com/doc?95223 TO-247AC PbF www.vishay.com/doc?95226 TO-247AC -M3 www.vishay.com/doc?95007 Document Number: 94387 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-30TPS16PBF