AUTOMOTIVE GRADE
VDSS
AUIRFR540Z
AUIRFU540Z
HEXFET® Power MOSFET
100V
RDS(on) typ.
D
22.5m
max.
D
28.5m
ID
S
G
35A
D-Pak
IRFR540ZPbF
S
Applications
l
Automatic Voltage Regulator (AVR)
l
Solenoid Injection
l
Body Control
l
Low Power Automotive Applications
Base part number
G
Gate
Package Type
AUIRFR540Z
Dpak
AUIRFU540Z
IPak
D
G
G
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
D
Drain
S
I-Pak
IRFU540ZPbF
S
Source
Orderable Part Number
Quantity
75
2000
3000
3000
75
AUIRFR540Z
AUIRFR540ZTR
AUIRFR540ZTRL
AUIRFR540ZTRR
AUIRFU540Z
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I D @ TC = 25°C
I D @ TC = 100°C
I DM
PD @TC = 25°C
VGS
EAS
EAS (tested )
I AR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Pulsed Drain Current
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
c
h
g
d
Max.
35
25
140
91
0.61
± 20
39
75
See Fig.12a, 12b, 15, 16
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Units
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Thermal Resistance
RJC
RJA
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
j
ij
Typ.
–––
–––
–––
Max.
1.64
40
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
0.092
V (BR)DSS/TJ Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
22.5
RDS(on)
VGS(th)
Gate Threshold Voltage
2.0
–––
gfs
Forward Transconductance
28
–––
Drain-to-Source Leakage Current
–––
–––
I DSS
–––
–––
Gate-to-Source Forward Leakage
–––
–––
I GSS
Gate-to-Source Reverse Leakage
–––
–––
Total Gate Charge
–––
39
Qg
Gate-to-Source Charge
–––
11
Qgs
Gate-to-Drain ("Miller") Charge
–––
12
Qgd
t d(on)
Turn-On Delay Time
–––
14
Rise Time
–––
42
tr
Turn-Off Delay Time
–––
43
t d(off)
Fall Time
–––
34
tf
Internal Drain Inductance
–––
4.5
LD
Max.
–––
–––
28.5
4.0
–––
20
250
200
-200
59
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1690
180
100
720
110
190
–––
–––
–––
–––
–––
–––
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
I SM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
t rr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
Forward Turn-On Time
t on
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.17mH
RG = 25, IAS = 21A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Units
Conditions
V
VGS = 0V, I D = 250μA
V/°C Reference to 25°C, I D = 1mA
m VGS = 10V, ID = 21A
V
VDS = V GS, ID = 50μA
S
VDS = 25V, ID = 21A
μA
VDS = 100V, V GS = 0V
VDS = 100V, V GS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
I D = 21A
nC
VDS = 50V
VGS = 10V
VDD = 50V
I D = 21A
ns
RG = 13
VGS = 10V
D
Between lead,
nH
6mm (0.25in.)
G
from package
S
and center of die contact
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
e
e
e
f
Conditions
MOSFET symbol
showing the
A
–––
–––
140
integral reverse
p-n junction diode.
TJ = 25°C, I S = 21A, V GS = 0V
–––
–––
1.3
V
–––
32
48
ns
TJ = 25°C, I F = 21A, V DD = 50V
–––
40
60
nC
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
–––
Typ.
–––
Max.
35
Units
e
e
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
R is measured at TJ approximately 90°C
2
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
1000
100
BOTTOM
1000
60μs PULSE WIDTH
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
100
BOTTOM
4.5V
10
60μs PULSE WIDTH
Tj = 175°C
4.5V
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
70
Gfs , Forward Transconductance (S)
ID, Drain-to-Source Current)
10
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
2
3
4
5
6
7
TJ = 25°C
60
50
40
TJ = 175°C
30
20
VDS = 10V
10
380μs PULSE WIDTH
60μs PULSE WIDTH
0.1
0
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
1
VDS, Drain-to-Source Voltage (V)
www.irf.com © 2012 International Rectifier
0
10
20
30
40
50
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
July 18, 2012
AUIRFR/U540Z
3000
20
2500
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
2000
Ciss
1500
1000
500
Coss
Crss
0
1
ID= 21A
VDS= 80V
VDS= 50V
VDS= 20V
16
12
8
4
0
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
30
40
50
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
www.irf.com © 2012 International Rectifier
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100μsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
July 18, 2012
AUIRFR/U540Z
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain Current (A)
40
30
20
10
ID = 21A
VGS = 10V
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
J
0.02
0.01
R1
R1
J
1
1
R2
R2
2
2
3
C
3
Ri (°C/W) i (sec)
2.626
0.000052
0.6611 0.001297
0.7154
Ci= iRi
Ci iRi
0.01
R3
R3
SINGLE PULSE
( THERMAL RESPONSE )
0.01832
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS, Single Pulse Avalanche Energy (mJ)
15V
160
I D
6.5A
9.4A
BOTTOM 21A
TOP
120
80
40
0
tp
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.5
Charge
Fig 13a. Basic Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
VG
ID = 1.0mA
ID = 250μA
ID = 50μA
4.0
3.5
3.0
2.5
2.0
1.5
L
DUT
0
VCC
1K
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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July 18, 2012
AUIRFR/U540Z
100
Avalanche Current (A)
Duty Cycle = Single Pulse
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
40
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 21A
30
20
10
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
7
www.irf.com © 2012 International Rectifier
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
July 18, 2012
AUIRFR/U540Z
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
RG
D.U.T.
+
-VDD
10V
Pulse Width µs
Duty Factor
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
8
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR540Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak Part Marking Information
Part Number
AUFU540Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
10
Note: For the most current drawing please refer to IR website at: http://www.irf.com/
package/
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Qualification Information
†
Automotive
(per AEC-Q101)†
Qualification Level
Moisture Sensitivity Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
D-PAK
MSL1
I-PAK
MSL1
Machine Model
Class M2 (+/- 200V)††
AEC-Q101-002
ESD
Human Body Model
Class H1B (+/- 1000V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
11
www.irf.com © 2012 International Rectifier
July 18, 2012
AUIRFR/U540Z
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
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product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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July 18, 2012