Data Sheet No. PD60026 revS IR2112(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600V • Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible • • • • Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Product Summary VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 125 & 105 ns Delay Matching 30 ns Packages Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and 16-Lead SOIC (wide body) low side referenced output channels. Proprietary HVIC 14-Lead PDIP and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1 IR2112(-1-2)(S)PbF Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35. Symbol Definition VB High Side Floating Supply Voltage VS Min. Max. -0.3 625 Units High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VCC Low Side Fixed Supply Voltage -0.3 25 VLO Low Side Output Voltage -0.3 VCC + 0.3 VDD Logic Supply Voltage -0.3 VSS + 25 VSS Logic Supply Offset Voltage VCC - 25 VCC + 0.3 VIN Logic Input Voltage (HIN, LIN & SD) dVs/dt PD RTHJA V VSS - 0.3 VDD + 0.3 Allowable Offset Supply Voltage Transient (Figure 2) — 50 Package Power Dissipation @ TA ≤ +25°C Thermal Resistance, Junction to Ambient (14 Lead DIP) — 1.6 (16 Lead SOIC) — 1.25 (14 Lead DIP) — 75 (16 Lead SOIC) — 100 TJ Junction Temperature — 150 TS Storage Temperature -55 150 TL Lead Temperature (Soldering, 10 seconds) — 300 V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37. Symbol Min. Max. VB High Side Floating Supply Absolute Voltage Definition VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage Note 1 600 VB VHO High Side Floating Output Voltage VS VCC Low Side Fixed Supply Voltage 10 20 VLO Low Side Output Voltage 0 VCC VDD Logic Supply Voltage VSS Logic Supply Offset Voltage VIN TA Units V VSS + 3 VSS + 20 -5 (Note 2) 5 Logic Input Voltage (HIN, LIN & SD) VSS VDD Ambient Temperature -40 125 °C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). Note 2: When VDD < 5V, the minimum VSS offset is limited to -VDD. 2 www.irf.com IR2112(-1-2)(S)PbF Dynamic Electrical Characteristics VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition Figure Min. Typ. Max. Units Test Conditions ton Turn-On Propagation Delay 7 — 125 180 VS = 0V toff Turn-Off Propagation Delay 8 — 105 160 VS = 600V tsd Shutdown Propagation Delay 9 — 105 160 tr Turn-On Rise Time 10 — 80 130 tf Turn-Off Fall Time 11 — 40 65 Delay Matching, HS & LS Turn-On/Off — — — 30 MT ns VS = 600V Static Electrical Characteristics VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol Definition Figure Min. Typ. Max. Units Test Conditions VIH Logic “1” Input Voltage 12 9.5 — — VIL Logic “0” Input Voltage 13 — — 6.0 VOH High Level Output Voltage, VBIAS - VO 14 — — 100 VOL Low Level Output Voltage, VO 15 — — 100 ILK Offset Supply Leakage Current 16 — — 50 V mV IO = 0A IO = 0A VB = VS = 600V IQBS Quiescent VBS Supply Current 17 — 25 60 VIN = 0V or VDD IQCC Quiescent VCC Supply Current 18 — 80 180 VIN = 0V or VDD IQDD Quiescent VDD Supply Current 19 — 2.0 5.0 IIN+ Logic “1” Input Bias Current 20 — 20 40 VIN = VDD IIN- 21 22 — 7.4 — 8.5 1.0 9.6 VIN = 0V 23 7.0 8.1 9.2 24 7.6 8.6 9.6 25 7.2 8.2 9.2 IO+ Logic “0” Input Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current 26 200 250 — IO- Output Low Short Circuit Pulsed Current 27 420 500 — VBSUV+ VBSUVVCCUV+ VCCUV- www.irf.com µA VIN = 0V or VDD V mA VO = 0V, VIN = VDD PW ≤ 10 µs VO = 15V, VIN = 0V PW ≤ 10 µs 3 IR2112(-1-2)(S)PbF Functional Block Diagram VB HO VS VCC LO COM Lead Definitions Symbol VDD HIN SD LIN VSS VB HO VS VCC LO COM 4 Description Logic supply Logic input for high side gate driver output (HO), in phase Logic input for shutdown Logic input for low side gate driver output (LO), in phase Logic ground High side floating supply High side gate drive output High side floating supply return Low side supply Low side gate drive output Low side return www.irf.com IR2112(-1-2)(S)PbF Lead Assignments 14 Lead PDIP 16 Lead SOIC (Wide Body) IR2112 IR2112S 14 Lead PDIP w/o lead 4 14 Lead PDIP w/o leads 4 & 5 IR2112-1 IR2112-2 Part Number www.irf.com 5 IR2112(-1-2)(S)PbF <50 V/ns Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit " # " # !! $ # Figure 3. Switching Time Test Circuit ! $ # % # % # Figure 4. Switching Time Waveform Definition " # " # " # '* % # $ # $ # Figure 5. Shutdown Waveform Definitions 6 Figure 6. Delay Matching Waveform Definitions www.irf.com IR2112(-1-2)(S)PbF 250 Turn-On Delay Time (ns) Turn-On Delay Time (ns) 250 200 Max. 150 100 Typ. 50 150 100 Typ. 50 0 0 -50 -25 0 25 50 Temperature 75 10 100 125 12 16 18 20 Figure 7B. Turn-On Time vs. VCC/VBS Supply Voltage 400 Turn-Off Delay Time (ns) 250 300 Max. 200 Typ. 100 0 200 Max. 150 100 Typ. 50 0 0 2 4 6 8 10 12 14 16 18 20 -50 -25 VDD Supply Voltage (V) 0 25 50 75 100 Figure 7C. Turn-On Time vs. VDD Supply Voltage Figure 8A. Turn-Off Time vs. Temperature 250 400 200 Max. 150 100 Typ. 50 0 10 12 14 16 18 20 VCC /VBS Supply Voltage (V) Figure 8B. Turn-Off Time vs. VCC/VBS Supply Voltage www.irf.com 125 Temperature (°C) Turn-OFF Delay Time (ns) Turn-Off Delay Time (ns) 14 VCC /VBS Supply Voltage (V) Figure 7A. Turn-On Time vs. Temperature Turn-On Delay Time (ns) Max . 200 300 Max. 200 100 Typ. 0 0 2 4 6 8 10 12 14 16 18 20 VDD Supply Voltage (V) Figure 8C. Turn-Off Time vs. VDD Supply Voltage 7 IR2112(-1-2)(S)PbF 250 Shutdown Delay Time (ns) Shutdown Delay Time (ns) 250 200 Max. 150 100 Typ. 50 0 -50 -25 0 25 50 75 100 200 Max. 150 100 Typ. 50 0 10 125 14 Figure 9A. Shutdow n Time vs. Temperature 20 250 Turn-On rise Time (ns) 300 Max. 200 100 Typ. 2 4 6 8 10 12 14 16 18 200 150 Max. 100 50 Typ. 0 -50 0 0 20 -25 0 V D D S upply V oltage (V ) 25 50 75 Temperature (°C) 100 125 Figure 10A. Turn-On Rise Time vs. Temperature Figure 9C. Shutdown Time vs. VDD Supply Voltage 250 125 Turn-On Fall Time (ns) Turn-On Rise Time (ns) 18 Figure 9B. Shutdown Delay Time vs. VCC/VBS Supply Voltage 400 200 Max. 150 100 Typ. 50 0 100 75 Max. 50 25 Typ. 0 10 12 14 16 18 VBIAS Supply Voltage (V) Figure 10B. Turn-On Rise Time vs. Voltage 8 16 VCC /VBS Supply Voltage (V) Temperature (°C) S hutdow n D elay Tim e (ns) 12 20 -50 -25 0 25 50 75 100 125 Tem perature (°C) Figure 11A Turn-On Fall Time vs. Temperature www.irf.com IR2112(-1-2)(S)PbF 15 Logic "1" Input Threshold (V) T u rn -O ff F a ll T im e (n s ) 125 100 Max. 75 50 Typ. 25 0 10 12 14 16 V B IA S S u p p ly V o lta g e (V ) 18 12 Min. 9 6 3 0 -50 25 50 75 100 125 Figure 12A. Logic “I” Input Threshold vs. Temperature 9 12 Logic "0" Input Threshold (V) 15 15 3 6 Min. 12 9 Max. 6 3 0 0 L o g ic " 1 " In p u t T re s h o ld 0 Temperature (°C) Figure 11B. Turn-Off Fall Time vs. Voltage 2 .5 5 7 .5 10 V D D L o g ic 1 2 .5 15 1 7 .5 -5 0 20 -2 5 0 25 50 75 100 125 Te m p e ra t u re (°C ) S u p p ly V o lta g e (V ) Figure 13A. Logic “0” Input Threshold vs. Temperature 15 Figure 12B. Logic “I” Input Threshold vs. Voltage 6 9 12 H igh Level O utput V oltage (V ) 1 3 Max. 0 Logic " 0 " Input Treshold (V) -25 20 2.5 5 7.5 10 12.5 15 17.5 20 VDD Logic Supply Voltage (V) Figure 13B. Logic “0” Input Threshold vs. Voltage www.irf.com 0.8 0.6 0.4 M ax. 0.2 0 -50 -25 0 25 50 75 100 125 T e m p e ra tu re Figure 14A. High Level Output vs. Temperature 9 1 1 Low Level Output Voltage (V) H igh L eve l O utp ut V oltage (V ) IR2112(-1-2)(S)PbF 0.8 0.6 0.4 M a x. 0.2 0.8 0.6 0.4 0 0 10 12 14 16 18 Max. 0.2 -50 20 -25 V B A IS S upply V otage (V ) 0.6 0.4 Max. 0.2 0 16 18 20 Offset Supply Leakage Current (uA) Low Level Output Voltage (V) 0.8 14 100 125 400 300 200 Max. 100 0 -50 -25 0 25 50 75 100 125 Temperature (°C) Figure 16A. Offset Supply Current vs. Temperature Figure 15B. Low Level Output vs. Voltage 500 100 VBS Supply Current (uA) Offset Supply Leakage Current (uA) 75 500 VBIAS Supply Votage (V) 400 300 200 M ax . 100 0 0 100 200 300 400 500 600 V B B oos t V oltage (v) Figure 16B. Offset Supply Current vs. Voltage 10 50 Figure 15A. Low Level Output vs. Temperature 1 12 25 Temperature (°C) Figure 14B. High Level Output vs. Voltage 10 0 80 60 Max. 40 20 0 Typ. -50 -25 0 25 50 75 100 125 Tem perature (°C ) Figure 17A. VBS Supply Current vs. Temperature www.irf.com IR2112(-1-2)(S)PbF 300 80 M ax . 60 40 250 Vcc Supply Current (uA) VBS Supply Current (uA) 100 Typ. 20 200 150 Max. 100 50 0 Typ. 0 10 12 14 16 18 20 -5 0 -2 5 0 V B S Floating S upply V oltage (V ) 75 100 125 12 VDD Supply Current (uA) Vcc Supply Current (uA) 300 250 200 Max. 150 100 Typ. 50 10 Max. 8 6 Typ. 4 2 0 0 10 12 14 16 18 -50 20 -25 0 Figure 18B. VCC Supply Current vs. Voltage Logic "1 " Input Bias Current (uA) 10 8 Max. 4 2 Typ. 0 2 4 6 8 10 12 14 16 VDD Logic Supply Voltage (V) 18 Figure 19B. VDD Supply Current vs. VDD Voltage www.irf.com 50 75 100 125 Figure 19A. VDD Supply Current vs. Temperature 12 6 25 Temperature (°C) Vcc Fixed Supply Voltage (V) VDD Supply Current (uA) 50 Figure 18A. VCC Supply Current vs. Temperature Figure 17B. VBS Supply Current vs. Voltage 0 25 T e m p e ra t u re (° C ) 20 100 80 60 Max. 40 20 Typ. 0 -50 -25 0 25 50 75 100 125 Temperature (°C) Figure 20A. Logic “I” Input Current vs. Temperature 11 IR2112(-1-2)(S)PbF 5 80 60 Max. 40 20 Typ. 0 0 2 4 6 8 10 12 14 16 V D D L o g ic S u p p ly V o lta g e (V ) 18 20 4 3 2 Max. 1 0 4 6 8 3 2 Max. 1 0 -50 -25 10 50 75 100 125 Max. 9 Typ. 8 Min. 7 6 -50 10 12 14 16 18 20 -25 0 25 50 75 100 125 Temperature (°C) Figure 21B. Logic “0” Input Current vs. VDD Voltage Figure 22. VBS Undervoltage (+) vs. Temperature 11 11 10 Max. 9 Typ. 8 Min. 7 6 -50 -25 0 25 50 75 100 125 Temperature (°C) Figure 23. VBS Undervoltage (-) vs. Temperature Vcc Undervoltage Lockout +(V) VBS Undervoltage Lockout -(V) 25 11 VDD Supply Voltage (V) 12 0 Figure 21A. Logic “0” Input Current vs. Temperature VBS Undervoltage Lockout +(V) Logic "0" Input Bias Current (uA) 5 2 4 Temperature (°C) Figure 20B. Logic “1” Input Current vs. VDD Voltage 0 Logic "0" Input Bias Current (uA) Logic " 1" Input Bias Current (uA) 100 10 Max. 9 Typ. 8 Min. 7 6 -50 -25 0 25 50 75 100 125 Temperature (°C) Figure 24. VCC Undervoltage (-) vs. Temperature www.irf.com IR2112(-1-2)(S)PbF 500 Output source Current (mA) VCC Undervoltage Lockout - (V) 11 10 Max. 9 Typ. 8 Min. 7 400 300 Typ. 200 Min. 100 0 6 -50 -25 0 25 50 75 100 -50 125 -25 Figure 25. VCC Undervoltage (-) vs. Temperature 25 50 75 100 125 Figure 26A. Output Source Current vs. Temperature 500 750 Output Sink Current (mA) Output source Current (mA) 0 Tem perature (°C ) Tem perature (°C) 400 Typ. 300 Min. 200 100 0 10 12 14 16 18 20 VBIAS Supply Voltage (V) 600 Typ. 450 300 Min. 150 0 -50 -25 0 25 50 75 100 125 Temperature (°C) Figure 26B. Output Source Current vs. Voltage Figure 27A. Output Sink Current vs. Temperature Output Sink Current (mA) 750 600 Typ. 450 300 Min. 150 0 10 12 14 16 18 20 VBIAS Supply Voltage (V) Figure 27B. Output Sink Current vs. Voltage www.irf.com 13 IR2112(-1-2)(S)PbF 150 150 320V 125 320V 100 75 140V 10V 50 Junction Temperature (°C) Junction Temperature (°C) 125 25 140V 75 10V 50 25 0 1E+2 100 0 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 1E+6 Frequency (Hz) Figure 28. IR2112 TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω Figure 29. IR2112 TJ vs. Frequency (IRFBC30) Ω, VCC = 15V RGATE = 22Ω 320V 150 320V 140V 10V 150 125 125 100 10V 75 50 Junction Temperature (°C) Junction Temperature (°C) 140V 25 100 75 50 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 Frequency (Hz) Figure 30. IR2112 TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω 140V 125 100 140V 75 10V 50 25 Junction Temperature (°C) Junction Temperature (°C) 1E+6 320V 150 320V 125 100 75 10V 50 25 0 0 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Figure 32. IR2112S TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω 14 1E+5 Figure 31. IR2112 TJ vs. Frequency (IRFPE50) Ω, VCC = 15V RGATE = 10Ω 150 1E+2 1E+4 Frequency (Hz) 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Figure 33. IR2112S TJ vs. Frequency (IRFBC30) Ω, VCC = 15V RGATE = 22Ω www.irf.com IR2112(-1-2)(S)PbF 320V 150 320V 140V 10V 150 140V 10V 125 Junction Temperature (°C) Junction Temperature (°C) 125 100 75 50 25 100 75 50 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 Frequency (Hz) 1E+5 1E+6 Figure 35. IR2112S TJ vs. Frequency (IRFPE50) Ω, VCC = 15V RGATE = 10Ω Figure 34. IR2112S TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω 0.0 20.0 VSS Logic Supply Offset Voltage (V) -3.0 VS Offset Supply Voltage (V) 1E+4 Frequency (Hz) Typ. -6.0 -9.0 -12.0 -15.0 16.0 12.0 8.0 Typ. 4.0 0.0 10 12 14 16 18 VBS Floating Supply Voltage (V) Figure 36. Maximum VS Negative Offset vs. VBS Supply Voltage www.irf.com 20 10 12 14 16 18 20 VCC Fixed Supply Voltage (V) Figure 37. Maximum VSS Positive Offset vs. VCC Supply Voltage 15 IR2112(-1-2)(S)PbF Case outline 16 14-Lead PDIP 01-6010 01-3002 03 (MS-001AC) 14-Lead PDIP w/o Lead 4 01-6010 01-3008 02 (MS-001AC) www.irf.com IR2112(-1-2)(S)PbF 16 Lead PDIP w/o Leads 4 & 5 16-Lead SOIC (wide body) www.irf.com 01-6015 01-3010 02 01 6015 01-3014 03 (MS-013AA) 17 IR2112(-1-2)(S)PbF LEADFREE PART MARKING INFORMATION Part number IRxxxxxx YWW? Date code ?XXXX Pin 1 Identifier ? P IR logo MARKING CODE Lead Free Released Non-Lead Free Released Lot Code (Prod mode - 4 digit SPN code) Assembly site code ORDER INFORMATION Part only available Leadfree 14-Lead 14-Lead 14-Lead 16-Lead PDIP IR2112 order IR2112PbF PDIP IR2112-1 order IR2112-1PbF PDIP IR2112-2 order IR2112-2PbF SOIC IR2112S order IR2112SPbF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This product has been qualified per industrial level Data and specifications subject to change without notice. 3/23/2005 18 www.irf.com