Kexin AO3401A-HF P-channel mosfet Datasheet

MOSFET
SMD Type
P-Channel MOSFET
AO3401A-HF (KO3401A-HF)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
1
0.55
● ID =-4 A (VGS =-10V)
● RDS(ON) < 50mΩ (VGS =-10V)
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● VDS (V) =-30V
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
● RDS(ON) < 60mΩ (VGS =-4.5V)
+0.05
0.1 -0.01
+0.1
0.97 -0.1
● RDS(ON) < 85mΩ (VGS =-2.5V)
Pb−Free Lead Finish
0-0.1
D
+0.1
0.38 -0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
1. Gate
2. Source
3. Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±12
Continuous Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
ID
IDM
TA=25°C
TA=70°C
t ≤ 10s
Steady-State
PD
RthJA
Unit
V
-4
-3.2
A
-27
1.4
0.9
W
90
125
RthJL
80
Junction Temperature
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
℃/W
℃
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MOSFET
SMD Type
P-Channel MOSFET
AO3401A-HF (KO3401A-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
Test Conditions
ID=-250μA, VGS=0V
Min
Typ
VDS=-30V, VGS=0V
-1
VDS=-30V, VGS=0V, TJ=55℃
-5
IGSS
VDS=0V, VGS=±12V
VGS(th)
VDS=VGS ID=-250μA
On state drain current
RDS(On)
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge (10V)
Total Gate Charge (4.5V)
VGS=-10V, ID=-4A
-0.5
VGS=-2.5V, ID=-2.5A
85
VGS=-10V, VDS=-5V
-27
VDS=-5V, ID=-4A
VGS=0V, VDS=-15V, f=1MHz
4
12
VGS=-10V, VDS=-15V, ID=-4A
7
6.5
Turn-Off DelayTime
td(off)
VGS=-10V, VDS=-15V, RL=3.75Ω,
RGEN=3Ω
Marking
X1** F
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3.5
ns
41
9
IF=-4A, dI/dt=100A/μs
IS=-1A,VGS=0V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
nC
1.5
tr
VSD
Ω
14
td(on)
IS
pF
55
VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Qrr
S
80
Turn-On DelayTime
Diode Forward Voltage
2
17
645
2.5
Maximum Body-Diode Continuous Current
mΩ
A
Qgd
Body Diode Reverse Recovery Charge
V
60
Gate Drain Charge
trr
nA
-1.3
VGS=-4.5V, ID=-3.5A
Qgs
Body Diode Reverse Recovery Time
±100
75
TJ=125℃
Gate Source Charge
tf
uA
50
Qg
Turn-Off Fall Time
Unit
V
VGS=-10V, ID=-4A
Static Drain-Source On-Resistance
Max
-30
11
3.5
nC
-2
A
-1
V
MOSFET
SMD Type
P-Channel MOSFET
AO3401A-HF (KO3401A-HF)
■ Typical Characterisitics
25
20
10V
VDS=-5V
4.5V
15
15
-ID(A)
-ID (A)
20
-2.5V
10
10
5
5
VGS=-2.0V
0
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
100
Normalized On-Resistance
1.8
80
RDS(ON) (mΩ )
25°C
125°C
VGS=-2.5V
60
VGS=-4.5V
40
VGS=-10V
VGS=-10V
ID=-4A
1.6
1.4
VGS=-4.5V
17
ID=-3.5A 5
1.2
VGS=-2.5V
ID=-2.5A
1
0.8
20
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
150
1.0E+01
130
1.0E+00
110
1.0E-01
90
IS (A)
RDS(ON) (mΩ )
ID=-4A
125°C
1.0E-02
125°C
1.0E-03
70
50
25°C
1.0E-04
25°C
1.0E-05
30
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
SMD Type
P-Channel MOSFET
AO3401A-HF (KO3401A-HF)
■ Typical Characterisitic
10
800
Capacitance (pF)
8
-VGS (Volts)
1000
VDS=-15V
ID=-4A
6
4
600
400
2
200
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
Ciss
15
Coss
Crss
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
10µs
-ID (Amps)
RDS(ON)
limited
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
1000
Power (W)
10.0
10
10s
DC
0.0
0.01
0.1
1
10
1
100
0.00001
-VDS (Volts)
.
Figure 9: Maximum Forward Biased Safe
Operating Area
Zθ JA Normalized Transient
Thermal Resistance
10
1
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
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10
100
1000
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