To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR6CM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR6CM Dimensions in mm 3.2±0.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX ∗ TYPE NAME VOLTAGE CLASS φ3.6±0.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 ∗ 123 24 3 • IT (AV) ........................................................................... 6A • VDRM ..............................................................400V/600V • IGT ..........................................................................10mA 1 1 2 3 4 Measurement point of case temperature CATHODE ANODE GATE ANODE TO-220 APPLICATION Switching mode power supply, ECR, regulator for autocycle, motor control MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage 400 600 V VD (DC) DC off-state voltage 320 480 V Symbol Conditions Parameter Unit A 6 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive 90 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 34 A2s RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =88°C ITSM Surge on-state current I2t I2t PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM for fusing Ratings 9.4 IT (RMS) 5 W 0.5 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 10 V IFGM Peak gate forward current 2 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 2.0 g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR6CM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 2.0 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM =20A, instantaneous value — — 1.7 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=1A — — 1.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V IGT Gate trigger current Tj=25°C, VD=6V, IT=1A — — 10 mA IH Holding current Tj=25°C, VD=12V — 15 — mA R th (j-c) Thermal resistance Junction to case ✽1 — — 3.0 °C/W ✽1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased. MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 125°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR6CM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) VFGM = 6V 101 7 5 3 2 PGM = 5W PG(AV) = 0.5W VGT = 1V 100 7 5 3 2 IGT = 10mA VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 103 7 5 3 2 TYPICAL EXAMPLE 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, 1.0 GATE TRIGGER VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 DISTRIBUTION 0.9 TYPICAL EXAMPLE 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 TIME (s) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 16 θ = 30° 14 180° 120° 90° 60° 12 10 8 6 θ 4 360° 2 0 0 2 4 6 8 RESISTIVE, INDUCTIVE LOADS 10 12 14 16 AVERAGE ON-STATE CURRENT (A) CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) 140 θ 120 360° 100 RESISTIVE, INDUCTIVE LOADS 80 60 40 θ = 30° 60° 90° 120° 20 0 0 1 2 3 4 5 180° 6 7 8 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR6CM MEDIUM POWER USE ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 16 θ = 30° 14 180° 120° 90° 60° 12 10 8 6 4 θ 2 360° 0 0 2 4 6 θ CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE RESISTIVE LOADS 8 10 12 14 16 140 θ 120 360° 80 60 6 θ 4 360° 2 0 0 2 4 6 8 RESISTIVE, INDUCTIVE LOADS 10 12 14 16 60° BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C ) 120 TYPICAL EXAMPLE 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 2 4 6 8 10 140 12 14 16 θ 360° 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 θ = 30° 90° 180° 40 DC 60° 120° 270° 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 80 0 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 100 120° AVERAGE ON-STATE CURRENT (A) 100 (%) 100 (%) 160 90° 180° 20 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE θ = 30° 40 0 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) 8 RESISTIVE LOADS 100 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 16 θ = 30° DC 14 60° 270° 180° 12 120° 90° 10 θ BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # 1 4.7mA 100 # 2 7.2mA 80 #2 60 40 #1 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR6CM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE HOLDING CURRENT VS. GATE TRIGGER CURRENT 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 50 45 DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, TYPICAL EXAMPLE HOLDING CURRENT (mA) HOLDING CURRENT (mA) HOLDING CURRENT VS. JUNCTION TEMPERATURE ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, 15 10 0 0 2 4 6 8 10 12 14 16 18 20 TURN-OFF TIME VS. JUNCTION TEMPERATURE VD = 100V RL = 16Ω Ta = 25°C TYPICAL EXAMPLE IGT (25°C) # 5.2mA 4.0 3.5 3.0 2.5 # 1.5 ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, 80 TYPICAL EXAMPLE 70 TURN-OFF TIME (µs) TURN-ON TIME (µs) 20 TURN-ON TIME VS. GATE CURRENT 1.0 60 50 40 30 DISTRIBUTION 20 10 0.5 0 0 10 20 30 40 50 60 70 80 90 100 0 20 IT = 6A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 120 100 (%) GATE CURRENT (mA) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) 25 GATE TRIGGER CURRENT (mA) 4.5 REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 30 JUNCTION TEMPERATURE (°C) 5.0 0 35 5 100 –40 –20 0 20 40 60 80 100 120 140 160 2.0 40 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999