Central CMLM7405 Schottky diode Datasheet

CMLM7405
MULTI DISCRETE MODULE ™
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VCE(SAT) PNP TRANSISTOR AND
LOW VF SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM7405 is a
single PNP transistor and Schottky diode packaged in
a space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM3405
• Combination High Current Low VCE(SAT)
Transistor and Low VF Schottky Diode.
SOT-563 CASE
MARKING CODE: C57
MAXIMUM RATINGS - Case: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
TJ, Tstg
ΘJA
350
-65 to +150
357
UNITS
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
40
25
6.0
1.0
1.5
UNITS
V
V
V
A
A
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCB=40V
VEB=6.0V
IC=100μA
40
IC=10mA
25
IE=100μA
6.0
IC=50mA, IB=5.0mA
25
IC=100mA, IB=10mA
40
IC=200mA, IB=20mA
80
IC=500mA, IB=50mA
150
IC=800mA, IB=80mA
220
IC=1.0A, IB=100mA
275
IC=800mA, IB=80mA
VCE=1.0V, IC=10mA
MAX
100
100
50
75
150
250
400
450
1.1
0.9
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
R3 (1-July 2015)
CMLM7405
MULTI DISCRETE MODULE ™
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VCE(SAT) PNP TRANSISTOR AND
LOW VF SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
TEST CONDITIONS
MIN
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR
VR=10V
IR
VR=30V
BVR
IR=500μA
VF
IF=100μA
VF
IF=1.0mA
VF
IF=10mA
VF
IF=100mA
VF
IF=500mA
CJ
VR=1.0V, f=1.0MHz
MAX
UNITS
300
15
20
100
40
0.13
0.21
0.27
0.35
0.47
50
MHz
pF
μA
μA
V
V
V
V
V
V
pF
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Collector Q1
MARKING CODE: C57
R3 (1-July 2015)
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CMLM7405
MULTI DISCRETE MODULE ™
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VCE(SAT) PNP TRANSISTOR AND
LOW VF SCHOTTKY DIODE
SERVICES
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development / Multi Discrete Modules (MDM™)
• Bare Die Available for Hybrid Applications
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contract would be substantially different.
R3 (1-July 2015)
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