Renesas EL7512CYZ-T13 High frequency pwm step-up regulator Datasheet

DATASHEET
EL7512
FN7290
Rev 1.00
May 23, 2005
High Frequency PWM Step-Up Regulator
The EL7512 is a high frequency, high efficiency step-up
DC:DC regulator operated at fixed frequency PWM mode.
With an integrated 1A MOSFET, it can deliver up to 600mA
output current at up to 90% efficiency. The adjustable
switching frequency is up to 1.2MHz, making it ideal for DSL
applications.
When shut down, it draws <3µA of current. This feature,
along with the minimum starting voltage of 2V, makes it
suitable for portable equipment powered by one lithium ion
or 3 to 4 NiMH cells.
The EL7512 is available in a 10-pin MSOP package, with
maximum height of 1.1mm. With proper external
components, the whole converter takes less than 0.25in2
PCB space.
This device is specified for operation over the full -40°C to
+85°C temperature range.
• 90% efficiency
• Up to 600mA IOUT
• 5V < VOUT < 18V
• VIN > 2V
• Up to 1.2MHz adjustable frequency
• < 3µA shutdown current
• Adjustable soft-start
• Low battery detection
• Internal thermal protection
• 1.1mm max height 10-pin MSOP package
• Pb-Free available (RoHS compliant)
Applications
Pinout
• 3V to 5V, 12V, and 18V converters
EL7512
(10-PIN MSOP)
TOP VIEW
L1
VIN
(2V9V)
Features
100k
1 PGND
LX 10
2 SGND
VDD 9
3 RT
• DSL
VOUT
C5 (12V up
to
47µF 400mA)
R4
1k
10µF
R3
• TFT-LCD
D1
10µH
C1
• 5V to 12V and 16V converters
C4
0.1µF
FB 8
C3
4 EN
SS 7
5 LBI
LBO 6
20nF
R2
80.6k
R1
10k
• Portable equipment
• Desktop equipment
Ordering Information
C10
4.7nF
PACKAGE
TAPE &
REEL
PKG. DWG. #
EL7512CY
10-Pin MSOP
-
MDP0043
EL7512CY-T7
10-Pin MSOP
7”
MDP0043
EL7512CY-T13
10-Pin MSOP
13”
MDP0043
EL7512CYZ
(See Note)
10-Pin MSOP
(Pb-free)
-
MDP0043
EL7512CYZ-T7
(See Note)
10-Pin MSOP
(Pb-free)
7”
MDP0043
EL7512CYZ-T13
(See Note)
10-Pin MSOP
(Pb-free)
13”
MDP0043
PART NUMBER
NOTE: Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with
both SnPb and Pb-free soldering operations. Intersil Pb-free products
are MSL classified at Pb-free peak reflow temperatures that meet or
exceed the Pb-free requirements of IPC/JEDEC J STD-020.
FN7290 Rev 1.00
May 23, 2005
Page 1 of 8
EL7512
Absolute Maximum Ratings (TA = 25°C)
EN, LBI, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+18V
LX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20V
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature: . . . . . . . . . . . . . . . . . . . . . . 135°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VIN = 5V, VOUT = 12V, IOUT = 0mA, RT = 100k, TA = 25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
3
µA
2.5
4
mA
1.35
1.39
V
0.10
µA
IQ1
Quiescent Current - Shut-down
VEN = 0
IQ2
Quiensent Current
VEN = 2V
VFB
Feedback Voltage
IB
Feedback Input Bias Current
VIN
Input Voltage Range
2
DMAX
Maximum Duty Cycle
84
90
ILIM
Current Limit - Max Average Input
Current
1000
1250
ISHDN
Shut-down Input Bias Current
VLBI
LBI Threshold Voltage
VOL-LBO
LBO Output Low
ILEAK-LBO
1.31
V
%
1500
mA
1
µA
220
250
mV
ILBO = 1mA
0.1
0.2
V
LBO Output Leakage Current
VLBI = 250mV, VLBO = 5V
0.02
1
µA
RDS-ON
Switch On Resistance
at 12V output
300
ILEAK-SWITCH
Switch Leakage Current
VOUT/VIN
Line Regulation
3V < VIN < 6V, VOUT = 12V, no load
VOUT/IOUT
Load Regulation
IOUT < 250mA
FOSC-MAX
Maximum Switching Frequency
RT = 49.9k
FOSC1
Switching Frequency
530
VHI_EN
EN Input High Threshold
1.6
VLO_EN
EN Input Low Threshold
180
m
1
µA
0.15
%/V
0.5
%
1200
kHz
670
800
kHz
V
0.5
V
Pin Descriptions
PIN NUMBER
PIN NAME
1
PGND
Power ground; connected to the source of internal N-channel power MOSFET
2
SGND
Signal ground; ground reference for all the control circuitry; needs to have only a single connection to PGND
3
RT
Timing resistor to adjust the oscillation frequency of the converter
4
EN
Chip enable; connects to logic HI (>1.6V) for chip to function
5
LBI
Low battery input; connects to a sensing voltage, or left open if function is not used
6
LBO
Low battery detection output; connected to the open drain of a MOSFET; able to sink 1mA current
7
SS
Soft-start; connects to a capacitor to control the start-up of the converter
8
FB
Voltage feedback input; needs to connect to resistor divider to decide VO
9
VDD
10
LX
FN7290 Rev 1.00
May 23, 2005
PIN FUNCTION
Control circuit positive supply
Inductor drive pin; connected to the drain of internal N-channel power MOSFET
Page 2 of 8
EL7512
Block Diagram
VOUT
15µF
80.6k
10k
VIN
1k
4.7nF
47µF
0.1µF
FB
VDD
MAX_DUTY
Thermal
Shut-down
10µF
LX
RT
Reference
Generator
100k
VREF
VRAMP
PWM
Logic
PWM
Comparator
0.3
EN
LBO
12µA
LBI
+
-
Start-up
Oscillator
+
ILOUT
7.2k
80m
210mV
SGND
SS
PGND
20nF
FN7290 Rev 1.00
May 23, 2005
Page 3 of 8
EL7512
Typical Performance Curves
100
Efficiency
VIN=3.3V, VO=12V
100
80
Efficiency (%)
Efficiency (%)
80
Efficiency
VIN=3.3V, VO=5V
60
40
20
60
40
20
0
10
FS=670kHz
60
110
0
10
210
160
FS=670kHz
110
210
IO (mA)
FS vs VDD
1400
100
Efficiency (%)
RT=71.5k
800
RT=100k
600
400
RT=200k
200
Efficiency
VIN=5V, VO=12V
5
6
7
8
9
10
11
60
40
20
0
0
10
12
FS=670kHz
60
110
160
210
Internal VREF vs TJ
310
360
FS vs Temperature
1.4
760
1.35
740
VDD=5V
1.3
720
FS (kHz)
1.25
1.2
1.15
700
VDD=10V
680
VDD=12V
1.1
660
1.05
1
-50
260
IO (mA)
VDD (V)
VREF (V)
510
80
1000
VDD=12V
0
50
TJ (°C)
FN7290 Rev 1.00
May 23, 2005
410
RT=51.1k
1200
FS (kHz)
310
IO (mA)
100
150
640
-50
RT=100k
0
50
100
150
TJ (°C)
Page 4 of 8
EL7512
Typical Performance Curves
(Continued)
VFB vs VDD
FS vs RT
1.355
1400
1.35
1200
1.345
1000
FS (kHz)
VFB
VDD=10V
1.34
1.335
800
600
1.33
400
1.325
200
1.32
5
6
7
8
9
10
11
0
50
12
VDD
100
150
200
RT (k)
Steady State Operation (inductor continuous
conduction) VIN=5V, VO=12V, IO=300mA
IDD vs FS
3.6
3.4
VDD=10V
VO=12V-18V
VI
IDD (mA)
3.2
3
VLX
2.8
2.6
VO
2.4
iL
2.2
2
650
750
850
950
1050
1150
1250
FS (kHz)
Steady State Operation (inductor discontinuous
conduction) VIN=5V, VO=12V, IO=25mA
Power-Up
VIN=5V, VO=12V, IO=300mA
VI
VLX
VIN
VO
VO
iL
iL
Load Transient Response
VIN=5V, VO=12V, IO=50mA-300mA
iO
VO
FN7290 Rev 1.00
May 23, 2005
Page 5 of 8
EL7512
Applications Information
The EL7512 is a step-up regulator, operated at fixed frequency
pulse-width-modulation (PWM) control. The input voltage is
2V-12V and output voltage is 5V-18V. The switching frequency
(up to 1.2MHz) is decided by the resistor connected to RT pin.
Start-Up
After VDD reaches a threshold of about 2V, the start-up
oscillator generates fixed duty-ratio of 0.5-0.7 at a frequency of
several hundred kilohertz. This will boost the output voltage.
When VDD reaches about 3.7V, the PWM comparator takes
over the control. The duty ratio will be decided by the multipleinput direct summing comparator, Max_Duty signal (about 90%
duty-ratio), and the Current Limit Comparator, whichever is the
smallest.
The soft-start is provided by the current limit comparator. As
the internal 12µA current source charges the external CSS, the
peak MOSFET current is limited by the voltage on the
capacitor. This in turn controls the rising rate of the output
voltage.
The regulator goes through the start-up sequence as well after
the EN signal is pulled to HI.
Steady-State Operation
When the output reaches the preset voltage, the regulator
operates at steady state. Depending on the input/output
conditions and component values, the inductor operates at
either continuous-conduction mode or discontinuousconduction mode.
In the continuous-conduction mode, the inductor current is a
triangular waveform and LX voltage a pulse waveform. In the
discontinuous-conduction mode, the inductor current is
completely dried out before the MOSFET is turned on again.
The input voltage source, the inductor, and the MOSFET and
output diode parasitic capacitors forms a resonant circuit.
Oscillation will occur in this period. This oscillation is normal
and will not affect the regulation.
where:
IL is the inductor peak-to-peak current ripple and is decided
by:
V IN D
I L = ---------  ------L
FS
D is the MOSFET turn-on ratio and is decided by:
V O – V IN
D = -----------------------VO
FS is the switching frequency.
The following table gives typical values:
MAX CONTINUOUS OUTPUT CURRENTS
VIN (V)
VO (V)
L (µH)
FS (kHz)
IOMAX
(mA)
2
5
10
1000
360
2
9
10
1000
190
2
12
10
1000
140
3.3
5
10
1000
600
3.3
9
10
1000
310
3.3
12
10
1000
230
5
9
10
1000
470
5
12
10
1000
340
5
15
10
1000
260
9
12
10
1000
630
9
15
10
1000
470
12
15
10
1000
670
12
18
11
1000
510
Component Considerations
At very low load, the MOSFET will skip pulses sometimes. This
is normal.
It is recommended that CIN is larger than 10µF. Theoretically,
the input capacitor has ripple current of IL. Due to highfrequency noise in the circuit, the input current ripple may
exceed the theoretical value. Larger capacitor will reduce the
ripple further.
Current Limit
The inductor has peak and average current decided by:
The MOSFET current limit is nominally 1.2A and guaranteed
1A. This restricts the maximum output current IOMAX based on
the following formula:
V IN
I L
I OMAX =  1 – --------  --------
2  VO
IO
I LAVG = ------------1–D
I L
I LPK = I LAVG + -------2
The inductor should be chosen to be able to handle this
current. Furthermore, due to the fixed internal compensation, it
is recommended that maximum inductance of 10µH and 15µH
to be used in the 5V and 12V or higher output voltage,
respectively.
FN7290 Rev 1.00
May 23, 2005
Page 6 of 8
EL7512
The output diode has average current of IO, and peak current
the same as the inductor's peak current. Schottky diode is
recommended and it should be able to handle those currents.
Output voltage ripple is the product of peak inductor current
times the ESR of output capacitor. Low ESR capacitor is to be
used to reduce the output ripple. The minimum output
capacitance of 330µF, 47µF, and 33µF is recommended for
5V, 12V, and 16V for 600kHz switching frequency,
respectively. For 1MHz switching frequency, 220µF, 33µF, and
22µF capacitor can be used for the output voltages. In addition
to the voltage rating, the output capacitor should also be able
to handle the rms current is given by:
I CORMS =
2


I L
1
 1 – D    D + --------------------  ------   I LAVG

2 12 
I LAVG


Output Voltage
An external resistor divider is required to divide the output
voltage down to the nominal reference voltage. The current
drawn by the resistor network should be limited to maintain the
overall converter efficiency. The maximum value of the resistor
network is limited by the feedback input bias current and the
potential for noise being coupled into the feedback pin. A
resistor network less than 300k is recommended. The boost
converter output voltage is determined by the relationship:
Layout Considerations
The layout is very important for the converter to function
properly. Power Ground (
) and Signal Ground (--)
should be separated to ensure that the high pulse current in
the Power Ground never interferes with the sensitive signals
connected to Signal Ground. They should only be connected at
one point.
The trace connected to pin 8 (FB) is the most sensitive trace. It
needs to be as short as possible and in a “quiet” place,
preferably between PGND or SGND traces.
In addition, the bypass capacitor connected to the VDD pin
needs to be as close to the pin as possible.
The heat of the chip is mainly dissipated through the SGND
pin. Maximizing the copper area around it is preferable. In
addition, a solid ground plane is always helpful for the EMI
performance.
The demo board is a good example of layout based on these
principles. Please refer to the EL7512 Application Brief for the
layout.
R 2

V OUT = V FB   1 + -------
R

1
where VFB slightly changes with VDD. The curve is shown in
this data sheet.
RC Filter
The maximum voltage rating for the VDD pin is 12V and is
recommended to be about 10V for maximum efficiency to drive
the internal MOSFET. The series resistor R4 in the RC filter
connected to VDD can be utilized to reduce the voltage. If VO is
larger than 10V, then:
V O – 10
R 4 = --------------------I DD
where IDD is shown in IDD vs FS curve. Otherwise, R4 can be
10 to 51 with C4 = 0.1µF.
Thermal Performance
The EL7512 uses a fused-lead package, which has a reduced
JA of 100°C/W on a four-layer board and 115°C/W on a twolayer board. Maximizing copper around the ground pins will
improve the thermal performance.
This chip also has internal thermal shut-down set at around
135°C to protect the component.
FN7290 Rev 1.00
May 23, 2005
Page 7 of 8
EL7512
Package Outline Drawing
NOTE: The package drawing shown here may not be the latest version. To check the latest revision, please refer to the Intersil website at
<http://www.intersil.com/design/packages/index.asp>
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in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
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FN7290 Rev 1.00
May 23, 2005
Page 8 of 8
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