MCC ER1V 1 amp super fast recovery silicon rectifier 1200 to 2000 volt Datasheet

MCC
ER1Q
THRU
ER1ZZ
omponents
21201 Itasca Street Chatsworth
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Features
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•
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1 Amp Super Fast
Recovery
Silicon Rectifier
1200 to 2000 Volts
For Surface Mount Applications
Extremely Low Thermal Resistance
High Temp Soldering: 250°C for 10 Seconds At Terminals
Super Fast Recovery Times For High Efficiency
Gull Wing Lead Bend To Prevent Arcing
Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
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•
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DO-214AA
(SMBJ) (Round Lead)
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 15°C/W Junction To Lead
MCC
Part
Number
Device
Marking
ER1Q
ER1V
ER1Y
ER1Z
ER1ZZ
ER1Q
ER1V
ER1Y
ER1Z
ER1ZZ
Maximum
Recurrent
Peak Reverse
Voltage
1200V
1400V
1600V
1800V
2000V
Maximum
RMS
Voltage
840V
980V
1120V
1260V
1400V
H
Cathode Band
Maximum
DC
Blocking
Voltage
1200V
1400V
1600V
1800V
2000V
J
A
E
lectrical Characteristics @ 25°C Unless Otherwise Specified
F
Average Forward
IF(AV)
1.0A
TJ = 55°C
Current
Peak Forward Surge
IFSM
30A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
1.85V
IFM = 1.0A;
ER1Q-ER1V
VF
2.0V
TJ = 25°C*
ER1Y-ER1ZZ
Maximum DC
IR
Reverse Current At
5µA
TJ = 25°C
Rated DC Blocking
30µA
TJ = 125°C
Voltage
Maximum Reverse
Recovery Time
IF=0.5A, IR=1.0A,
Trr
150ns
ER1Q-ER1Y
300ns
ER1Z-ER1ZZ
Irr=0.25A
Typical Junction
CJ
45pF
Measured at
Capacitance
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
G
C
D
B
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
.078
.075
.002
----.035
.065
.205
.160
.130
MM
MIN
1.98
1.90
.05
----.90
1.65
5.21
4.06
3.30
MAX
.116
.089
.008
.02
.055
.091
.224
.180
.155
MAX
2.95
2.25
.20
.51
1.40
2.32
5.69
4.57
3.94
SUGGESTED SOLDER
PAD LAYOUT
0.090"
0.085”
www.mccsemi.com
0.070”
NOTE
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