BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE. TO-3 1 2 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 3 3 2 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1500 V Collector-Emitter Voltage (IB = 0) 700 V Emitter-Base Voltage (IC = 0) 10 V 8 A V CES Collector-Emitter Voltage (V BE = 0) V CEO V EBO IC I CM Collector Current Collector Peak Current (tp < 5 ms) P t ot Total Dissipation at Tc = 25 o C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1999 15 TO - 3 TO - 218 150 125 -65 to 175 -65 to 150 175 150 A ISOW AT T218 50 W -65 to 150 o C 150 o C 1/8 BU208A / BU508A / BU508AFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case T O-3 TO -218 ISO WATT218 1 1 2.5 Max o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . o TC = 125 C Max. Un it 1 2 mA mA 100 µA I C = 100 mA 700 V Emitter Base Voltage (I C = 0) I E = 10 mA 10 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1 V V BE(s at)∗ Base-Emitt er Saturation Voltage I C = 4.5 A IB = 2 A 1.3 V ts tf INDUCTIVE LO AD Storage Time Fall Time I C = 4.5 A hF E = 2.5 V CC = 140 V L C = 0.9 mH LB = 3 µH fT Transition Frequency I C = 0.1 A V EBO V CE = 5 V f = 5 MHz 7 0.55 µs µs 7 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area (TO-3) 2/8 Safe Operating Areas (TO-218/ISOWATT218) BU208A / BU508A / BU508AFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load (see figure 1) 3/8 BU208A / BU508A / BU508AFI Figure 1: Inductive Load Switching Test Circuit. 4/8 BU208A / BU508A / BU508AFI TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 5/8 BU208A / BU508A / BU508AFI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 6/8 1 2 3 P025A BU208A / BU508A / BU508AFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 7/8 BU208A / BU508A / BU508AFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8