AUIRFR8401
AUIRFU8401
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
VDSS
40V
RDS(on) typ.
3.2m
4.25m
max
G
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other applications.
S
ID (Silicon Limited)
100A
ID (Package Limited)
100A
I-Pak
AUIRFU8401
D-Pak
AUIRFR8401
Applications
Electric Power Steering (EPS)
Battery Switch
Start /Stop Micro Hybrid
Heavy Loads
DC-DC Converter
G
D
S
Gate
Drain
Source
Ordering Information
Base part number
Package Type
AIRFR8401
D-Pak
AUIRFU8401
I-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Tube
75
Complete Part Number
AUIRFR8401
AUIRFR8401TR
AUIRFR8401TRL
AUIRFR8401TRR
AUIRFU8401
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
100
71
100
400
79
0.53
± 20
-55 to + 175
Units
A
W
W/°C
V
°C HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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© 2013 International Rectifier
May 06, 2013
AUIRFR_U8401
Avalanche Characteristics EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
Repetitive Avalanche Energy
EAR
67 94 mJ
See Fig 14, 15, 24a, 24b
A
mJ
Thermal Resistance Symbol
RJC
RCS
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient
Typ.
–––
–––
–––
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
––– 0.035 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
3.2
4.25
RDS(on)
Static Drain-to-Source On-Resistance
m
VGS(th)
Gate Threshold Voltage
2.2
–––
3.9
V
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
µA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
IGSS
Gate-to-Source Reverse Leakage
–––
––– -100
nA
RG
Internal Gate Resistance
–––
2.0
–––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
198
–––
–––
Qg
Total Gate Charge
–––
42
63
Qgs
Gate-to-Source Charge
–––
12
–––
S
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
28
–––
td(on)
Turn-On Delay Time
–––
7.9
–––
tr
Rise Time
–––
34
–––
ns
td(off)
Turn-Off Delay Time
–––
25
–––
Fall Time
–––
24
–––
tf
Ciss
Input Capacitance
––– 2200 –––
Coss
Output Capacitance
–––
340
–––
Crss
Reverse Transfer Capacitance
–––
205
–––
Coss eff. (ER) Effective Output Capacitance
–––
410
–––
pF
(Energy Related)
–––
495
–––
Coss eff. (TR) Effective Output Capacitance
(Time Related)
Max.
1.9
50
110
Units
°C/W Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 60A
VDS = VGS, ID = 50µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Conditions
VDS = 10V, ID = 60A
ID = 60A
VDS = 20V
VGS = 10V
VDD = 20V
ID = 30A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V , See
Fig. 11
VGS = 0V, VDS = 0V to 32V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limit current is 100A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.037mH
RG = 50, IAS = 60A, VGS =10V.
ISD 60A, di/dt 918A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
2
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© 2013 International Rectifier
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same
energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L=0.037mH, RG = 25, IAS = 60A, VGS =10V.
May 06, 2013
AUIRFR_U8401
Diode Characteristics Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ. Max. Units
–––
––– 100
–––
–––
400
VSD
Diode Forward Voltage
–––
–––
1.3
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
3.2
28
29
28
31
1.6
–––
–––
–––
–––
–––
–––
Symbol
IS
ISM
3
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© 2013 International Rectifier
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
TJ = 25°C,IS = 60A,VGS = 0V
V/ns TJ = 175°C,IS =60A,VDS = 40V
TJ = 25°C
VDD = 34V
ns
TJ = 125°C
IF = 60A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
May 06, 2013
1000
1000
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
10
1
4.8V
60µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
6.0V
5.5V
5.3V
5.0V
4.8V
100
BOTTOM
10
4.8V
60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
2.0
100
T J = 175°C
10
T J = 25°C
1
0.1
VDS = 10V
60µs PULSE WIDTH
0.01
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
ID = 60A
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.0
0.5
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature
14
10000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
VGS
15V
10V
7.0V
6.0V
5.5V
5.3V
5.0V
4.8V
Ciss
1000
Coss
Crss
ID= 60A
12
VDS= 32V
VDS= 20V
VDS= 8.0V
10
8
6
4
2
0
0
100
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
AUIRFR_U8401
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
100
0.0
0.4
0.8
1.2
1.6
Package
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
60
40
20
0
125
150
10
Fig 8. Maximum Safe Operating Area
175
T C, Case Temperature (°C)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
ID, Drain Current (A)
80
100
1
VDS, Drain-toSource Voltage (V)
100
75
DC
0.1
2.0
Fig 7. Typical Source-Drain Diode Forward Voltage
50
10msec
1
VSD , Source-to-Drain Voltage (V)
25
100µsec
Limited by
VGS = 0V
0.1
1msec
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
39
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
0.3
EAS, Single Pulse Avalanche Energy (mJ)
240
Energy (µJ)
0.2
0.1
0.0
200
160
120
80
40
0
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
5
ID
8.5A
20A
BOTTOM 60A
TOP
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© 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
May 06, 2013
AUIRFR_U8401
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
70
60
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 60A
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
50
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.
40
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
30
during avalanche).
6. Iav = Allowable avalanche current.
20
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
10
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D,tav)= Transient thermal resistance, see Figures 14)
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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© 2013 International Rectifier
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ZthJC
Iav = 2T/[1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
May 06, 2013
AUIRFR_U8401
RDS(on), Drain-to -Source On Resistance ( m )
4.5
16
VGS(th) Gate threshold Voltage (V)
ID = 60A
12
8
T J = 125°C
4
T J = 25°C
0
4
8
12
16
4.0
3.5
3.0
ID = 50µA
ID = 250µA
ID = 1.0mA
2.5
ID = 1.0A
2.0
1.5
20
-75 -50 -25
VGS, Gate-to-Source Voltage (V)
75
100 125 150 175
8
IF = 60A
V R = 34V
IF = 40A
V R = 34V
TJ = 25°C
TJ = 125°C
6
TJ = 25°C
TJ = 125°C
IRRM (A)
6
4
4
2
2
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 19 - Typical Recovery Current vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
100
100
IF = 40A
V R = 34V
80
IF = 60A
V R = 34V
80
TJ = 25°C
TJ = 125°C
60
QRR (nC)
QRR (nC)
50
Fig 17. Threshold Voltage vs. Temperature
8
40
TJ = 25°C
TJ = 125°C
60
40
20
20
0
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
7
25
T J , Temperature ( °C )
Fig 16. Typical On-Resistance vs. Gate Voltage
IRRM (A)
0
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© 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 21 - Typical Stored Charge vs. dif/dt
May 06, 2013
AUIRFR_U8401
RDS(on), Drain-to -Source On Resistance ( m )
10.0
VGS = 6.0V
VGS = 10V
8.0
6.0
4.0
2.0
0
20
40
60
80
100
120
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
8
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© 2013 International Rectifier
May 06, 2013
AUIRFR_U8401
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 24a. Unclamped Inductive Test Circuit
Fig 24b. Unclamped Inductive Waveforms
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 26a. Gate Charge Test Circuit
9
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© 2013 International Rectifier
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
May 06, 2013
D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR8401
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFR_U8401
I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUFU8401
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
May 06, 2013
AUIRFR_U8401
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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© 2013 International Rectifier
May 06, 2013
AUIRFR_U8401
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
3L-D-PAK
I-PAK
Machine Model
MSL1
N/A
Class M2 (+/- 200)††
AEC-Q101-002
ESD
Human Body Model
Class H1C (+/- 2000)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000)††
AEC-Q101-005
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
13
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© 2013 International Rectifier
May 06, 2013
AUIRFR_U8401
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is
not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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deceptive business practice. IR is not responsible or liable for any such statements.
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of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14
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May 06, 2013