MOSFET SMD Type P-Channel MOSFET AO3423-HF (KO3423-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features Features 1 0.55 ● RDS(ON) ≤ 100m@ (VGS = -4.5V) ● RDS(ON) ≤ 150m@ (VGS = -2.5V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = -20V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a +0.05 0.1 -0.01 1. Gate 2. Source +0.1 0.38 -0.1 0-0.1 +0.1 0.97 -0.1 Pb−Free Lead Finish 3. Drain D G S ■ Absolute Features Maximum Ratings Ta = 25 ℃ Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current (TJ=150℃) *2 TA=25℃ TA=70℃ ID Pulsed Drain Current *1 IDM Continuous Source Current (diode conduction) *2 Power Dissipation *2 TA=25 ℃ TA=70 ℃ Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 Maximum Junction-to-Ambient *3 -2.4 -1.9 -2.2 -1.8 -10 A A IS -0.72 -0.6 A PD 0.9 0.57 0.7 0.45 W TJ,Tstg RthJA -55 to +150 145 175 ℃ ℃ /W * 1. Pulse width limited by maximum junction temperature. * 2. Surface Mounted on FR4 Board, t ≤ 5 sec. * 3. Surface Mounted on FR4 Board. www.kexin.com.cn 1 MOSFET SMD SMD Type Type P-Channel MOSFET AO3423-HF (KO3423-HF) ■ Electrical Features Characteristics Ta = 25 ℃ Parameter Symbol Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) VDS = VGS, ID = -250 uA Min Typ Max -20 -0.45 -0.95 VDS = 0 V, VGS = ± 8 V ± 100 VDS = -20 V, VGS = 0 V -1 VDS = -20 V, VGS = 0 V, TJ = 55 -10 VDS ≤ -5 V, VGS = -4.5 V -6 VDS ≤ -5 V, VGS = -2.5 V -3 VGS = -4.5 V, ID = -2.8 A 0.10 VGS = -2.5 V, ID = -2.0 A 0.15 gfs VDS = -5 V, ID = -2.8 A 6.5 Diode Forward Voltage * VSD IS = -0.75 A, VGS = 0 V -0.8 -1.2 4.5 10 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -6V ,VGS = -4.5 V , ID= -2.8 A Ciss Reverse Transfer Capacitance Crss 65 td(on) 20 30 tr 40 60 30 45 20 30 tf ■ Marking Marking www.kexin.com.cn N01* F uA Ω V 1.1 Coss * Pulse test: PW ≤ 300 u s du ty cycle ≤ 2%. nA nC 0.7 Output Capacitance Turn-Off Time V S Input Capacitance td(off) Unit A Forward Transconductance * Turn-On Time 2 Test conditions V(BR)DSS VGS = 0 V, ID = -250 uA 375 VDS = -6V ,VGS = 0 , f = 1 MHz VDD = -6V , RL = 6 Ω , ID = -1A , VGEN =- 4.5V , RG = 6 Ω pF 95 ns IC MOSFET SMD SMD Type Type P-Channel MOSFET AO3423-HF (KO3423-HF) ■ Typical Characteristics Ou t p u t Ch ar ac t er i s t i c s 10 V GS = 5 thru 2.5 V TC = - 55 C 8 I D - Drain Current (A) I D - Drain Current (A) 8 Tr an s f er Ch ar ac t er i s t i c s 10 2 V 6 4 1.5 V 2 25 C 125 C 6 4 2 1 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.5 2.0 2.5 3.0 Capacitance 800 0.4 C - Capacitance (pF) r DS(on)- On-Resistance ( ) 0.5 0.3 0.2 V GS = 2.5 V 600 C iss 400 200 C oss 0.1 V GS = 4.5 V 0.0 C rss 0 0 2 4 6 8 0 10 4 Gate Charge 5 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 1.6 V DS = 10 V ID = 2.8 A On-Resistance vs. Junction Temperature V GS = 4.5 V I D = 2.8 A 1.4 ) 4 r DS(on)- On-Resistance ( (Normalized) V GS - Gate-to-Source Voltage (V) 1.0 VGS - Gate-to-Source Voltage (V) 3 2 1 0 0 1 2 3 Qg - Total Gate Charge (nC) 4 5 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) www.kexin.com.cn 3 SMD Type MOSFET P-Channel MOSFET AO3423-HF (KO3423-HF) ■ Typical Characterisitics Source-Drain Diode Forward V oltage 10 On-Resistance vs. Gate-to-Source 0.6 Voltage T J = 150 C r DS(on)- On-Resistance ( I S - Source Current (A) ) 0.5 1 T J = 25 C 0.4 I D = 2.8 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) Threshold V oltage 4 5 Single Pulse Power 10 0.3 8 Power (W) 0.2 I D = 250 A 0.1 6 4 0.0 T A = 25 C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature ( C ) Safe Operating Area 10 s 100 s I D - Drain Current (A) 10 1 ms 1 10 ms T A = 25 C Single Pulse 100 ms 0.1 dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.kexin.com.cn 1 10 Time (sec) 100 4 3 VGS - Gate-to-Source Voltage (V) 0.4 V GS(th) Variance (V) 2 100 100 1000 SMD Type MOSFET ■ Typical Characterisitics P-Channel MOSFET AO3423-HF (KO3423-HF) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA= 62.5 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 www.kexin.com.cn 5