PD - 97729A
IRLTS2242PbF
HEXFET® Power MOSFET
VDS
-20
V
VGS max
±12
V
D
1
6
32
m
D
2
5
D
55
m
G
3
4
S
12
nC
-6.9
A
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
Qg typ
ID
(@TA= 25°C)
A
D
TSOP-6
Top View
Applications
l
l
Battery operated DC motor inverter MOSFET
System/Load Switch
Features and Benefits
Features
Industry-Standard TSOP-6 Package
results in
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
IRLTS2242TRPbF
TSOP-6
Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
-20
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
±12
ID @ TA = 25°C
-5.5
IDM
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
c
V
-6.9
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
ID @ TA = 70°C
Units
A
-55
0.02
-55 to + 150
W
W/°C
°C
Notes through are on page 2
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1
02/23/12
IRLTS2242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
VDSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
-20
–––
–––
9.4
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
26
45
32
55
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
-0.4
–––
–––
-3.8
-1.1
V
VDS = VGS, ID = -10μA
––– mV/°C
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
–––
–––
-1.0
-150
-100
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
8.5
–––
–––
100
–––
Total Gate Charge
Gate-to-Source Charge
–––
–––
12
1.5
–––
–––
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
4.3
–––
RG
td(on)
tr
td(off)
–––
–––
–––
–––
17
5.8
18
81
–––
–––
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
68
905
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
280
200
–––
–––
gfs
Qg
Qgs
Qgd
V VGS = 0V, ID = -250μA
mV/°C Reference to 25°C, ID = -1mA
m
μA
nA
VGS = -4.5V, ID = -6.9A
VGS = -2.5V, ID = -5.5A
d
d
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
S
VGS = 12V
VDS = -10V, ID = -5.5A
nC
VDS = -10V
VGS = -4.5V
ID = -5.5A
ns
VDD = -10V, VGS = -4.5V
ID = -5.5A
RG = 6.8
VGS = 0V
pF
VDS = -10V
ƒ = 1.0KHz
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
–––
–––
-2.0
–––
-55
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
-1.2
V
p-n junction diode.
TJ = 25°C, IS = -5.5A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
41
16
62
24
ns
nC
TJ = 25°C, IF = -5.5A, VDD = -16V
di/dt = 100A/μs
ton
Forward Turn-On Time
A
c
showing the
integral reverse
G
d
S
d
Time is dominated by parasitic Inductance
Thermal Resistance
RJA
Junction-to-Ambient
e
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 inch square copper board.
2
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IRLTS2242PbF
100
100
10
BOTTOM
1
-1.40V
60μs PULSE WIDTH
10
BOTTOM
-1.40V
1
60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
1.4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C
T J = 25°C
VDS = -10V
60μs PULSE WIDTH
1.0
ID = -6.9A
VGS = -4.5V
1.2
1.0
0.8
0.6
0
1
2
3
4
5
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
ID= -5.5A
C oss = C ds + C gd
Ciss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
-10V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-10V
-4.50V
-2.50V
-2.25V
-2.00V
-1.80V
-1.55V
-1.40V
Coss
Crss
100
12.0
VDS= -16V
VDS= -10V
VDS= -4.0V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
5
10
15
20
25
30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRLTS2242PbF
1000
ID, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10
T J = 150°C
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
10
1msec
1
10msec
0.1
VGS = 0V
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.4
1
10
100
VDS, Drain-to-Source Voltage (V)
-V SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1.4
-V GS(th), Gate threshold Voltage (V)
8
-I D, Drain Current (A)
DC
Tc = 25°C
Tj = 150°C
Single Pulse
6
4
2
0
1.2
1.0
0.8
0.6
0.4
0.2
ID = -10μA
ID = -250μA
ID = -1.0mA
ID = -10mA
0.0
25
50
75
100
125
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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70
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
IRLTS2242PbF
ID = -6.9A
60
50
40
30
T J = 125°C
20
T J = 25°C
10
0
0
5
10
15
450
400
350
Vgs = -2.5V
300
250
200
150
100
Vgs = -4.5V
50
0
20
0
10
30
Fig 12. On-Resistance vs. Gate Voltage
50
60
Fig 13. Typical On-Resistance vs. Drain Current
16000
120
ID
TOP
-1.3A
-2.0A
BOTTOM -5.5A
100
14000
12000
Power (W)
80
60
40
10000
8000
6000
4000
20
2000
0
1E-8
0
25
50
75
100
125
150
1E-7
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T *
Driver Gate Drive
-
-
Period
P.W.
-
D=
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P.W.
Period
D.U.T. ISD Waveform
Reverse
Recovery
Current
V DD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
InductorCurent
Current
Inductor
Ripple 5%
Reverse Polarity of D.U.T for P-Channel
1E-3
*
+
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
1E-4
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
RG
1E-5
Fig 15. Typical Power vs. Time
+
+
1E-6
Time (sec)
Starting T J , Junction Temperature (°C)
*
40
-ID, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
EAS , Single Pulse Avalanche Energy (mJ)
20
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
IRLTS2242PbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
SS
Qgodr
Fig 17a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V
GS
-20V
tp
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
L
VDS
Qgd
VDD
A
DRIVER
0.01
tp
V(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
V DS
RD
td(on)
VGS
RG
D.U.T.
-
+
t d(off)
tf
10%
V DD
-V GS
Pulse Width µs
Duty Factor
Fig 19a. Switching Time Test Circuit
6
tr
VGS
90%
VDS
Fig 19b. Switching Time Waveforms
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IRLTS2242PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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DATE CODE MARKING INSTRUCTIONS
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLTS2242PbF
TSOP-6 Tape and Reel Information
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information†
Cons umer
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
(per JE DE C JE S D47F
TSOP-6
††
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/12
8
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