Seme LAB D2225 Metal gate rf silicon fet Datasheet

TetraFET
D2225UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
D
N
8
1
7
2
6
3
5
4
C
B
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 12.5V – 1GHz
PUSH–PULL
H
K
FEATURES
M
L
J
• SIMPLIFIED AMPLIFIER DESIGN
E
F
G
• SUITABLE FOR BROAD BAND APPLICATIONS
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN 1
PIN 3 – DRAIN 2
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE 2
PIN 7 – GATE 1
PIN 8 – SOURCE
Dim.
A
B
C
D
E
F
G
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
H
0.76
J
K
L
M
N
P
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website http://www.semelab.co.uk
E-mail: [email protected]
17.5W
40V
±20V
4A
–65 to 150°C
200°C
Prelim. 2/99
D2225UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
40
VGS = 0
ID = 10mA
V
VDS = 12.5V
VGS = 0
1
mA
1
µA
7
V
IGSS
Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th)
Gate Threshold Voltage*
ID = 10mA
VDS = VGS
0.5
gfs
Forward Transconductance*
VDS = 10V
ID = 0.2A
0.18
S
10
dB
40
%
20:1
—
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 5W
η
Drain Efficiency
VDS = 12.5V
VSWR
Load Mismatch Tolerance
f = 1GHz
IDQ = 0.2A
PER SIDE
Ciss
Input Capacitance
VDS = 0V
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance VDS = 12.5V VGS = 0
* Pulse Test:
12
pF
f = 1MHz
10
pF
f = 1MHz
1
pF
VGS = –5V f = 1MHz
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website http://www.semelab.co.uk
E-mail: [email protected]
Max. 6°C / W
Prelim. 2/99
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