PD - 96407A
AUTOMOTIVE GRADE
AUIRFP4004
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.35mΩ
1.70mΩ
350A
195A
c
ID (Package Limited)
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
S
D
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
d
f
g
e
2.0
-55 to + 175
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
dv/dt
TJ
TSTG
Units
c
c
350
250
195
1390
380
2.5
± 20
290
See Fig. 14, 15, 21a, 21b
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
x
x
10lb in (1.1N m)
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
k
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Typ.
Max.
Units
–––
0.24
–––
0.40
–––
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/06/11
AUIRFP4004
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40
–––
–––
2.0
290
–––
–––
–––
–––
––– –––
0.035 –––
1.35 1.70
–––
4.0
––– –––
–––
20
––– 250
––– 200
––– -200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 195A
V VDS = VGS, ID = 250μA
S VDS = 10V, ID = 195A
μA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
220
59
75
145
330
–––
–––
–––
–––
6.8
59
370
160
190
8920
2360
930
2860
3110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
d
g
nC
Conditions
ID = 195A
VDS = 20V
VGS = 10V
ID = 195A, VDS =0V, VGS = 10V
g
Ω
ns
pF
VDD = 20V
ID = 195A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
di
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. Refer to App Notes (AN-1140).
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.015mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
2
Min. Typ. Max. Units
–––
––– 350
–––
–––
c
1390
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
VR = 20V,
TJ = 125°C
IF = 195A
di/dt = 100A/μs
TJ = 25°C
g
S
––– –––
1.3
V
–––
83
130
ns
–––
78
120
––– 190 290
nC
TJ = 125°C
––– 210 320
–––
4.0
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
ISD ≤ 195A, di/dt ≤ 690A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
www.irf.com
AUIRFP4004
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
3L-TO-247
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
†††
ESD
Human Body Model
Class H3A(+/- 6000V )
(per AEC-Q101-001)
†††
Charged Device Model
RoHS Compliant
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
www.irf.com
3
AUIRFP4004
1000
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
100
4.5V
4.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
10
0.1
1
10
0.1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 175°C
100
T J = 25°C
10
VDS = 10V
≤60μs PULSE WIDTH
ID = 195A
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
2.0
1.0
1.0
0.5
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
12.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
VGS , Gate-to-Source Voltage (V)
ID= 195A
Coss = Cds + Cgd
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
Ciss
10000
Coss
Crss
1000
100
10.0
VDS= 32V
VDS= 24V
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
V DS, Drain-to-Source Voltage (V)
0
50
100
150
200
250
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
AUIRFP4004
10000
T J = 175°C
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
1000
TJ = 25°C
1
100μsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.4
0.8
1.2
1.6
1
2.0
ID, Drain Current (A)
Limited By Package
250
200
150
100
50
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
350
25
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
300
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
52
Id = 5.0mA
50
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
EAS , Single Pulse Avalanche Energy (mJ)
1200
ID
36A
73A
BOTTOM 195A
TOP
1000
2.0
Energy (μJ)
DC
1.5
1.0
0.5
0.0
800
600
400
200
0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFP4004
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
1E-005
0.0001
τ4
τ4
τi (sec)
0.0123
0.000011
0.0585
0.000055
0.1693
0.000917
0.1601
0.008784
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
300
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 21a, 21b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
AUIRFP4004
12
IF = 78A
V R = 34V
4.5
10
4.0
3.5
3.0
IRR (A)
VGS(th) , Gate threshold Voltage (V)
5.0
ID = 250μA
ID = 1.0mA
2.5
TJ = 25°C
TJ = 125°C
8
6
ID = 1.0A
2.0
4
1.5
2
1.0
-75 -50 -25 0
0
25 50 75 100 125 150 175 200
200
T J , Temperature ( °C )
600
800
1000
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
14
350
12
IF = 117A
V R = 34V
10
TJ = 25°C
TJ = 125°C
Q RR (A)
IRR (A)
400
diF /dt (A/μs)
8
300
IF = 78A
V R = 34V
250
TJ = 25°C
TJ = 125°C
200
6
150
4
100
2
50
0
100
200
300
400
500
600
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
Q RR (A)
400
350
IF = 117A
V R = 34V
300
TJ = 25°C
TJ = 125°C
250
200
150
100
0
100
200
300
400
500
600
diF /dt (A/μs)
www.irf.com
Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFP4004
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01Ω
I AS
Fig 21a. Unclamped Inductive Test Circuit
LD
Fig 21b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 22a. Switching Time Test Circuit
tr
td(off)
tf
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
8
Fig 23a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 23b. Gate Charge Waveform
www.irf.com
AUIRFP4004
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Part Number
AUFP4004
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFP4004
Ordering Information
Base part
AUIRFP4004
10
Package Type
TO-247
Standard Pack
Complete Part Number
Form
Quantity
Tube
25
AUIRFP4004
www.irf.com
AUIRFP4004
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third
parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
www.irf.com
11