IRF IRF7494TRPBF

PD - 95349C
IRF7494PbF
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
l Lead-Free
l
VDSS
RDS(on) max
ID
150V
44mΩ@VGS = 10V
5.1A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
150
VGS
Gate-to-Source Voltage
± 20
Units
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.1
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.0
IDM
Pulsed Drain Current
40
PD @TA = 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
33
-55 to + 150
V/ns
c
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
A
°C
Thermal Resistance
Parameter
i
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient (PCB Mount)
e
Typ.
Max.
–––
20
–––
50
Units
°C/W
Notes  through ‡ are on page 8
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1
10/15/09
IRF7494PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
150
–––
–––
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.13
35
–––
44
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.5
–––
–––
–––
4.0
10
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 3.1A
V
µA
f
VDS = VGS, ID = 250µA
VDS = 120V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Qg
Forward Transconductance
Total Gate Charge
Qgs
Qgd
td(on)
Min. Typ. Max. Units
12
–––
–––
35
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
tf
Ciss
Conditions
–––
53
S
VDS = 50V, ID = 5.1A
ID = 3.1A
6.4
–––
nC
13
9
–––
–––
–––
–––
10
29
–––
–––
Fall Time
Input Capacitance
–––
–––
14
1783
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
222
104
–––
–––
Coss
Output Capacitance
–––
886
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
–––
–––
121
189
–––
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
VDS = 75V
VGS = 10V
VDD = 75V
ns
ID = 3.1A
RG = 6.8Ω
VGS = 10V
VGS = 0V
pF
f
f
VDS = 25V
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Typ.
–––
–––
d
Units
mJ
A
Max.
262
3.1
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
2
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
2.3
A
showing the
integral reverse
D
G
(Body Diode)
Diode Forward Voltage
–––
–––
40
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 3.1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
45
93
–––
–––
ns
nC
TJ = 25°C, IF = 3.1A, VDD = 25V
di/dt = 100A/µs
c
S
f
f
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IRF7494PbF
100
100
10
BOTTOM
1
4.25V
0.1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
10
BOTTOM
4.25V
1
≤60µs PULSE WIDTH Tj = 150°C
≤60µs PULSE WIDTH Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
VGS
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
VDS = 50V
≤60µs PULSE WIDTH
10
T J = 150°C
T J = 25°C
1
ID = 5.1A
VGS = 10V
2.0
1.5
1.0
0.5
0.1
3.0
3.5
4.0
4.5
5.0
5.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7494PbF
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 3.1A
C oss = C ds + C gd
10000
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
C rss = C gd
Ciss
1000
Coss
Crss
100
12.0
VDS= 120V
VDS= 75V
10.0
VDS= 30V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
1000
5
VDS, Drain-to-Source Voltage (V)
100
20
25
30
35
40
45
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
15
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
100µsec
10
1msec
1
T A = 25°C
0.1
10msec
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
QG, Total Gate Charge (nC)
1.0
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7494PbF
6
RD
VDS
ID, Drain Current (A)
5
VGS
D.U.T.
RG
4
+
-V DD
10V
3
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
VDS
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
50
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRF7494PbF
45
Vgs = 10V
40
35
30
0
5
10
15
20
25
30
35
40
100
ID = 5.1A
90
80
T J = 125°C
70
60
50
T J = 25°C
40
30
20
4
45
ID, Drain Current (A)
VCC
QGS
VG
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
14
16
18
20
700
QGD
Charge
tp
12
QG
VGS
1K
10
Fig 13. On-Resistance vs. Gate Voltage
EAS , Single Pulse Avalanche Energy (mJ)
DUT
0
8
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
L
6
ID
1.4A
2.5A
BOTTOM 3.1A
600
TOP
500
400
300
200
100
0
A
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7494PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7494PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 55mH,
RG = 25Ω, IAS = 3.1A.
ƒ When mounted on 1 inch square copper
board, t ≤ 10 sec.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† ISD ≤ 3.1A, di/dt ≤ 1907A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
‡ Rθ is measured at TJ of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2009
8
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