ETC EE-SX1235A-P2 Opto-switch Datasheet

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Opto–Switch
EE–SX1235A–P2
Transmissive
Phototransistor output.
Snap-in mounting mechanism for easy mounting
and dismounting.
Compatible with 1.0-, 1.2- and 1.6-mm-thick PCBs.
High resolution with a 0.5-mm-wide aperture.
5-mm-wide slot.
Connects to Japan AMP’s CT-series connectors.
Dimensions
Four, R0.5
Post header 175489-3
(Japan AMP)
Internal Circuit
3 A
(3)
(2)
(1)
3 (see note)
3.2
(slit
width)
0.5 (slit width)
1 C
2 K, E
Optical
axis
Name
Anode
Collector
Cathode,
Emitter
Unless otherwise specified, the
tolerances are as shown below.
(see
note
)
Note:
Terminal No.
A
C
K, E
The asterisked dimension is
specified by datum A only.
Recommended Connectors:
Japan AMP
173977-3 (insulation displacement-type connector)
175778-3 (crimp-type connector)
179228-3 (crimp-type connector)
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm 6
±0.375
6 < mm 10
±0.45
10 < mm 18
±0.55
18 < mm 30
±0.65
For recommended mounting holes
see EE–SX4235–P2 on page 402
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Detector
Ambient temperature
Note:
Symbol
Rated value
Forward current
IF
50 mA (see note)
Pulse forward current
IFP
---
Reverse voltage
VR
4V
Collector–Emitter voltage
VCEO
30 V
Emitter–Collector voltage
VECO
5V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW (see note)
Operating
Topr
–25°C to 95°C
Storage
Tstg
–40°C to 100°C
Soldering
Tsol
---
Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 µA typ., 10 µA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 30 mA
Light current
IL
0.6 mA min., 14 mA max.
IF = 20 mA, VCE = 5 V
Dark current
ID
200 nA max.
VCE = 10 V, 0 ȏx
Leakage current
ILEAK
---
---
Collector–Emitter saturated
voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.3 mA
Peak spectral sensitivity
wavelength
λP
850 nm typ.
VCE = 5 V
Rising time
tr
8 µs typ.
VCC = 5 V, RL = 100 Ω, IL = 1 mA
Falling time
tf
8 µs typ.
VCC = 5 V, RL = 100 Ω, IL = 1 mA
Detector
Engineering Data
Ambient temperature Ta (°C)
Light Current vs. Collector–Emitter
Voltage Characteristics (Typical)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector–Emitter voltage VCE (V)
Response Time vs. Load Resistance Characteristics (Typical)
Light current I L (mA)
Forward current IF (mA)
Dark Current vs. Ambient Temperature Characteristics (Typical)
VCE = 10 V
0 ȏx
IF = 20 mA
VCE = 5 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
Relative light current I L (%)
Vcc = 5 V
Ta = 25°C
Response time tr, tf ( µ s)
Ta = 70°C
Forward voltage VF (V)
Relative light current I L (%)
Light current I L (mA)
IF = 40 mA
Ta = 25°C
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Ta = 25°C
IF = 50 mA
Ta = –30°C
Dark current I D (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Forward current I F (mA)
IF
Forward current I F (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of
optical axis)
Response Time Measurement
Circuit
Input
Output
10%
90%
Input
VCC
Output
GND
Load resistance RL (kΩ)
Distance d (mm)
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