Kexin BSR19A Npn high-voltage transistor Datasheet

Transistors
SMD Type
NPN High-Voltage Transistors
BSR19,BSR19A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High voltage (max. 160 V).
1
0.55
Low current (max. 300 mA)
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
Rating
Unit
160
V
BSR19A
180
V
BSR19
140
V
160
V
BSR19
VCBO
VCEO
BSR19A
VEBO
6
V
Collector current
IC
300
mA
Peak collector current
ICM
600
mA
Emitter-base voltage
IB
100
mA
Peak base current
IBM
100
mA
Total power dissipation *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
Base current
K/W
* Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
SMD Type
BSR19,BSR19A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
BSR19
Collector cutoff current
BSR19A
Emitter cutoff current
ICBO
ICBO
IEBO
DC current gain *
BSR19
hFE
Testconditons
Max
Unit
IE = 0; VCB = 100 V
100
nA
IE = 0; VCB = 100 V; Tamb = 100
100
ìA
IE = 0; VCB = 120 V
50
nA
IE = 0; VCB = 120 V; Tamb = 100
50
ìA
50
nA
IC = 0; VEB = 4 V
IC = 10 mA; VCE = 5 V
BSR19A
DC current gain *
BSR19
hFE
IC = 50 mA; VCE = 5 V
BSR19A
collector-emitter saturation voltage
collector-emitter saturation voltage
60
250
80
250
20
VCEsat
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
BSR19A
Collector capacitance
Cc
IE = ie = 0; VCB = 10 V; f = 1 MHz
Transition frequency
fT
IC = 10 mA; VCE = 10 V; f = 100 MHz
hFE Classification
2
TYPE
BSR19
BSR19A
Marking
U35
U36
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Typ
30
VCEsat
BSR19
Min
100
150
mV
250
mV
200
mV
6
pF
300
MHz
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