Microsemi APT2X60D60J Ultrafast soft recovery rectifier diode Datasheet

2
1
3
4
2
1
Anti-Parallel
APT2X60D60J
3
4
2
1
3
4
SO
Parallel
APT2X61D60J
2
T-
27
"UL Recognized"
ISOTOP ®
file # E145592
APT2X61D60J
APT2X60D60J
600V
600V
60A
60A
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular SOT-227 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
• Low Leakage Current
MAXIMUM RATINGS
Symbol
VR
Density
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT2X61_60D60J
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 106°C, Duty Cycle = 0.5)
60
RMS Forward Current (Square wave, 50% duty)
90
IF(RMS)
IFSM
TJ,TSTG
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Amps
600
-55 to 175
Operating and StorageTemperature Range
°C
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 60A
1.6
1.8
IF = 120A
1.9
IF = 60A, TJ = 125°C
1.4
Volts
VR = 600V
250
VR = 600V, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
90
UNIT
µA
pF
6-2006
VF
Characteristic / Test Conditions
053-6005 Rev G
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT2X61_60D60J
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 60A, diF/dt = -200A/µs
IF = 60A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
MIN
TYP
MAX
UNIT
-
40
-
130
-
220
-
4
-
170
ns
-
920
nC
-
10
-
80
ns
-
1900
nC
-
38
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
VIsolation
WT
Torque
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MAX
UNIT
.60
°C/W
Volts
2500
Package Weight
1.03
oz
29.2
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.60
D =0.9
0.50
0.7
0.40
0.5
0.3
0.20
0.10
0
Note:
PDM
0.30
t2
t
0.1
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
6-2006
TJ (°C)
053-6005 Rev G
t1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
TC (°C)
0.159
0.255
0.186
Dissipated Power
(Watts)
0.0056
0.0849
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.70
0.489
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
200
180
180
160
140
120
100
TJ = 125°C
80
TJ = 25°C
60
TJ = 150°C
40
TJ = -55°C
20
0
0
0.5
1
1.5
2
2.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
2500
T = 125°C
J
V = 400V
R
2000
120A
60A
1500
1000
30A
500
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
T = 125°C
J
V = 400V
R
120A
160
60A
140
30A
120
100
80
60
40
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
40
35
T = 125°C
J
V = 400V
120A
R
30
25
20
60A
15
30A
10
5
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
120
Qrr
Duty cycle = 0.5
T = 175°C
J
1.0
100
trr
0.8
80
IRRM
0.6
0.4
Qrr
0.2
0.0
APT2X61_60D60J
20
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
trr
trr, REVERSE RECOVERY TIME
(ns)
200
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
TYPICAL PERFORMANCE CURVES
60
40
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
600
500
400
6-2006
300
200
100
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-6005 Rev G
CJ, JUNCTION CAPACITANCE
(pF)
700
APT2X61_60D60J
Vr
diF /dt Adjust
+18V
APT60M75L2LL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
053-6005 Rev G
6-2006
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
Anti-parallel
Anode 2
APT2X60D60J
Parallel
APT2X61D60J
Cathode 1 Cathode 1
Anode 1
Anode 1
Anode 2
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Cathode 2
Cathode 2
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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