VISHAY SiHG460B

IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
D Series Power MOSFET
FEATURES
PRODUCT SUMMARY
• Optimal Design
VDS (V) at TJ max.
550
RDS(on) max. at 25 °C ()
VGS = 10 V
Qg max. (nC)
170
Qgs (nC)
14
Qgd (nC)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
28
Configuration
Single
D
TO-247AC
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
G
S
D
G
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
0.25
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
S
N-Channel MOSFET
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-247AC
IRFP460BPbF
Lead (Pb)-free and Halogen-free
SiHG460B-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (TJ = 150 °C)
LIMIT
VDS
500
± 20
30
20
13
62
2.2
281
278
- 55 to + 150
24
0.36
300c
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dtd
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.
c. 1.6 mm from case.
d. ISD  ID, starting TJ = 25 °C.
S12-0812-Rev. B, 16-Apr-12
SYMBOL
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Document Number: 91502
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 250 μA
-
0.56
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
1
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
10
μA
-
0.2
0.25

gfs
VDS = 50 V, ID = 10 A
-
12
-
S
Input Capacitance
Ciss
3094
-
Coss
-
152
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output Capacitance
-
13
-
Effective output capacitance, energy
relateda
Co(er)
-
131
-
Effective output capacitance, time
relatedb
Co(tr)
-
189
-
-
85
170
-
14
-
-
28
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 10 A
Dynamic
pF
VGS = 0 V,
VDS = 0 V to 400 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
-
24
50
tr
-
31
62
-
117
176
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 10 A, VDS = 400 V
VDD = 400 V, ID = 10 A,
VGS = 10 V, Rg = 9.1 
f = 1 MHz, open drain
nC
ns
-
56
112
-
1.8
-
-
-
20
-
-
80
-
-
1.2
V
-
437
-
ns
-
5.9
-
μC
-
25
-
A

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 10 A, VGS = 0 V
TJ = 25 °C, IF = IS = 10 A,
dI/dt = 100 A/μs, VR = 20 V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
S12-0812-Rev. B, 16-Apr-12
Document Number: 91502
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
60
TJ = 25 °C
RDS(on), Drain-to-Source
On Resistance (Normalized)
ID, Drain-to-Source Current (A)
15 V
14 V
13 V
12 V
11
11 V
V
10 V
9V
8V
7V
6V
BOTTOM 5 V
3
TOP
40
20
2.5
2
1.5
1
VGS = 10 V
0.5
0
0
5
10
15
20
25
ID = 10 A
0
- 60 - 40 - 20 0
30
VDS, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
40
10 000
15 V
14 V
13 V
12 V
11 V
V
11
10 V
9V
8V
7V
6V
BOTTOM 5 V
30
TJ = 150 °C
ġ
Capacitance (pF)
ID, Drain-to-Source Current (A)
TOP
20
Ciss
1000
100
ġ
Coss
10
10
ġ
Crss
1
0
0
5
10
15
20
25
0
30
VDS, Drain-to-Source Voltage (V)
100
200
300
400
500
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
24
VGS, Gate-to-Source Voltage (V)
80
ID, Drain-to-Source Current (A)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
ġ
Crss = Cgd
ġ
Coss = Cds + Cgd
TJ = 25 °C
60
TJ = 150 °C
40
20
VDS = 400 V
VDS = 250 V
VDS = 100 V
20
16
12
8
4
0
0
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S12-0812-Rev. B, 16-Apr-12
25
0
30
60
90
120
150
180
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91502
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
20
ISD, Reverse Drain Current (A)
100
ID, Drain Current (A)
TJ = 150 °C
TJ = 25 °C
10
ġ
ġ
1
16
12
8
4
VGS = 0 V
ġ
0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
1.6
VSD, Source-Drain Voltage (V)
75
100
125
150
TJ, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
1000
625
Operation in this area
limited by RDS(on)
600
VDS, Drain-to-Source
Brakdown Voltage (V)
ID, Drain Current (A)
50
100
10
100 μs
Limited by RDS(on)*
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
550
525
500
BVDSS Limited
10 ms
0.1
475
- 60 - 40 - 20 0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Normalized Effective Transient
Thermal Impedance
575
Fig. 10 - Temperature vs. Drain-to-Source Voltage
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S12-0812-Rev. B, 16-Apr-12
Document Number: 91502
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
RD
VDS
QG
10 V
VGS
D.U.T.
RG
QGS
+
- VDD
QGD
VG
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
VDS
90 %
50 kΩ
12 V
0.2 µF
0.3 µF
+
10 %
VGS
D.U.T.
td(on)
td(off) tf
tr
-
VDS
VGS
3 mA
Fig. 13 - Switching Time Waveforms
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
V DD
10 V
0.01 Ω
tp
Fig. 14 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
S12-0812-Rev. B, 16-Apr-12
Document Number: 91502
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91502.
S12-0812-Rev. B, 16-Apr-12
Document Number: 91502
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-247AC (HIGH VOLTAGE)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
5
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
5
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
INCHES
MIN.
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
D2
0.51
1.30
0.020
0.051
A1
2.21
2.59
0.087
0.102
E
15.29
15.87
0.602
0.625
A2
1.50
2.49
0.059
0.098
E1
13.72
-
0.540
-
b
0.99
1.40
0.039
0.055
e
5.46 BSC
b1
0.99
1.35
0.039
0.053
Øk
b2
1.65
2.39
0.065
0.094
L
14.20
16.10
b3
1.65
2.37
0.065
0.093
L1
3.71
4.29
b4
2.59
3.43
0.102
0.135
N
0.215 BSC
0.254
0.010
7.62 BSC
0.559
0.634
0.146
0.169
0.300 BSC
b5
2.59
3.38
0.102
0.133
ØP
3.56
3.66
0.140
0.144
c
0.38
0.86
0.015
0.034
Ø P1
-
7.39
-
0.291
c1
0.38
0.76
0.015
0.030
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
S
5.51 BSC
0.217 BSC
ECN: S-81920-Rev. A, 15-Sep-08
DWG: 5971
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
Document Number: 91360
Revision: 15-Sep-08
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1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000