ADPOW APTM100DA18T Boost chopper mosfet power module Datasheet

APTM100DA18T
CR1
OUT
Q2
G2
S2
0/VBU S
NTC1
G2
S2
VBUS
VBUS
SENSE
0/VBUS
OUT
OUT
S2
NTC2
G2
NTC1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
43
33
172
±30
215
780
25
50
3000
Unit
V
A
V
mΩ
W
A
June, 2005
NTC2
VBUS
VBUS SENSE
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM100DA18T– Rev 1
Boost chopper
MOSFET Power Module
APTM100DA18T
All ratings @ Tj = 25°C unless otherwise specified
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Min
VGS = 0V,VDS = 1000V
T j = 25°C
VGS = 0V,VDS = 800V
T j = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
180
3
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 500V
ID = 43A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
Unit
µA
mΩ
V
nA
nF
nC
18
12
40
1800
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, R G = 2.5Ω
2846
µJ
1246
µJ
1558
Min
Tj = 125°C
Typ
60
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
760
Tj = 125°C
3600
T c = 100°C
ns
155
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, R G = 2.5Ω
Test Conditions
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 667V
di/dt = 200A/µs
IF = 60A
VR = 667V
di/dt = 200A/µs
Unit
244
Chopper diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
Typ
10.4
1.76
0.32
372
Max
500
2000
215
5
±150
48
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
R G = 2.5Ω
Rise Time
Typ
Max
Unit
A
2.5
V
ns
June, 2005
Symbol
nC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM100DA18T– Rev 1
Electrical Characteristics
APTM100DA18T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
Max
0.16
0.9
2500
-40
-40
-40
1.5
RT =
Min
R 25
°C/W
V
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Unit
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

APT website – http://www.advancedpower.com
3–6
APTM100DA18T– Rev 1
June, 2005
Package outline (dimensions in mm)
APTM100DA18T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.3
0.06
0.04
0.1
0.05
0
0.00001
Single Pulse
0.02
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
160
7V
80
6.5V
60
6V
40
5.5V
20
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
140
ID, Drain Current (A)
120
100
80
60
TJ =25°C
40
20
5V
0
0
5
10
15
20
25
TJ =125°C
30
0
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
9
45
Normalized to
VGS =10V @ 21.5A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.9
0.8
40
35
30
25
20
15
10
5
0
0
20
40
60
80
ID, Drain Current (A)
100
120
25
50
75
100
125
150
TC, Case Temperature (°C)
June, 2005
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1.4
TJ =-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM100DA18T– Rev 1
I D, Drain Current (A)
VGS =15, 10&8V
100
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=21.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by R DSon
100
1ms
10
Single pulse
TJ =150°C
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
I D=43A
TJ=25°C
12
VDS=200V
VDS=500V
10
VDS=800V
8
6
4
2
0
0
100
200
300
400
500
Gate Charge (nC)
June, 2005
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM100DA18T– Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100DA18T
APTM100DA18T
Delay Times vs Current
Rise and Fall times vs Current
80
t d(off)
160
V DS=670V
RG =2.5Ω
T J=125°C
L=100µH
120
80
0
40
tr
0
10
30
50
70
90
10
30
50
70
I D, Drain Current (A)
I D, Drain Current (A)
7
Eon
VDS=670V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy (mJ)
Switching Energy (mJ)
3
Eoff
2
1
0
5
4
Eon
3
2
1
30
50
70
90
0
5
I D, Drain Current (A)
Operating Frequency vs Drain Current
15
20
Source to Drain Diode Forward Voltage
1000
I DR, Reverse Drain Current (A)
200
Frequency (kHz)
10
Gate Resistance (Ohms)
250
ZVS
ZCS
150
50
Eoff
V DS =670V
ID=43A
T J=125°C
L=100µH
6
0
10
100
90
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
4
tf
20
t d(on)
40
V DS =670V
RG =2.5Ω
T J=125°C
L=100µH
60
tr and tf (ns)
td(on) and td(off) (ns)
200
VDS=670V
D=50%
RG=2.5Ω
T J=125°C
Tc=75°C
Hard
switching
0
15
20
25
30
35
ID, Drain Current (A)
40
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM100DA18T– Rev 1
June, 2005
10
100
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