Microsemi APTGL180A120T3AG Phase leg trench field stop igbt4 power module Datasheet

APTGL180A120T3AG
Phase leg
Trench + Field Stop IGBT4
Power Module
29
30
31
32
VCES = 1200V
IC = 180A @ Tc = 100°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13
4
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
• Very low stray inductance
• Kelvin emitter for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
3
26
27
28
22
23
25
R1
8
7
16
28 27 26 25
18
19
20
14
20 19 18
23 22
29
16
30
15
31
14
Benefits
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
13
32
2
3
4
7
8
10 11 12
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
230
180
300
±20
940
Tj = 125°C
300A @ 1100V
TC = 25°C
TC = 100°C
TC = 25°C
Unit
V
March, 2011
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-5
APTGL180A120T3AG – Rev 2
Symbol
VCES
APTGL180A120T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 150A
Tj = 150°C
VGE = VCE , IC = 5.5 mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.8
2.2
5.8
Min
Typ
Max
Unit
300
2.2
µA
6.5
200
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Rise Time
Turn-off Delay Time
Fall Time
Td(off)
Tf
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE= -8V / 15V ; VCE=600V
IC=150A
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 150A
RG = 3Ω
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 150A
RG = 3Ω
VGE = ±15V
TJ = 150°C
VCE = 600V
IC = 150A
TJ = 150°C
RG = 3Ω
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
9.3
0.58
0.5
nF
0.85
µC
130
20
300
ns
45
150
35
350
80
ns
13.5
mJ
14.5
mJ
600
A
Reverse diode ratings and characteristics
IRM
IF
Min
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
1200
IF = 240A
IF = 120A
IF = 120A
VR = 800V
di/dt =400A/µs
150
600
Tc = 100°C
120
Tj = 125°C
2.5
3
1.8
Tj = 25°C
265
Tj = 125°C
Tj = 25°C
350
1120
Tj = 125°C
5780
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Unit
V
Tj = 25°C
Tj = 125°C
IF = 120A
VF
Typ
µA
A
3
March, 2011
VRRM
Test Conditions
Maximum Peak Repetitive Reverse Voltage
V
ns
nC
2-5
APTGL180A120T3AG – Rev 2
Symbol Characteristic
APTGL180A120T3AG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.16
0.37
Unit
°C/W
V
175
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
⎝ 25
⎠⎦
⎣
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGL180A120T3AG – Rev 2
28
17
1
March, 2011
SP3 Package outline (dimensions in mm)
APTGL180A120T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
300
Output Characteristics
300
250
VGE=19V
TJ=25°C
200
200
TJ=150°C
IC (A)
IC (A)
TJ = 150°C
250
150
150
100
100
50
50
0
VGE=15V
VGE=9V
0
0
1
2
3
4
0
1
2
VCE (V)
VCE (V)
Transfert Characteristics
300
VCE = 600V
VGE = 15V
RG = 3.Ω
TJ = 150°C
30
E (mJ)
IC (A)
200
150
100
4
Energy losses vs Collector Current
40
TJ=25°C
250
3
Eon
Eoff
20
10
TJ=150°C
50
0
0
5
6
7
8
9
10
11
12
0
13
50
100
Switching Energy Losses vs Gate Resistance
200
250
300
Reverse Bias Safe Operating Area
45
350
VCE = 600V
VGE =15V
IC = 150A
TJ = 150°C
30
300
Eon
250
IC (A)
37.5
E (mJ)
150
IC (A)
VGE (V)
22.5
Eoff
15
200
150
VGE=15V
TJ=150°C
RG=3Ω
100
7.5
50
0
0
0
5
10
15
Gate Resistance (ohms)
20
0
300
600
VCE (V)
900
1200
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
IGBT
0.9
0.12
0.1
0.08
0.06
0.04
0.02
March, 2011
0.14
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL180A120T3AG – Rev 2
Thermal Impedance (°C/W)
0.18
APTGL180A120T3AG
Forward Characteristic of diode
300
VCE=600V
D=50%
RG=3 Ω
TJ=150°C
Tc=75°C
ZVS
150
120
250
TJ=125°C
200
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
180
90
ZCS
60
30
150
100
Hard
switching
TJ=25°C
50
0
0
0
40
80
120
160
200
240
0
0.5
IC (A)
1
1.5
2
VF (V)
2.5
3
3.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.3
Diode
0.9
0.7
0.25
0.2
0.15
0.1
0.05
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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5-5
APTGL180A120T3AG – Rev 2
March, 2011
Rectangular Pulse Duration in Seconds
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