BC 846 ... BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code SOT-23 (TO-236) Weight approx. – Gewicht ca. 2 1 250 mW 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.9 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 846 BC 847/850 BC 848/849 Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (DC) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Group A Group B Group C 2 DC current gain – Kollektor-Basis-Stromverhältnis ) VCE = 5 V, IC = 10 :A hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800 Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance – Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 10 01.11.2003 General Purpose Transistors BC 846 ... BC 850 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. – Kollektor-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA VCEsat – 90 mV 250 mV IC = 100 mA, IB = 5 mA VCEsat – 200 mV 600 mV Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA VBEsat – 700 mV – IC = 100 mA, IB = 5 mA VBEsat – 900 mV – VCE = 5 V, IC = 2 mA VBEon 580 mV 660 mV 700 mV VCE = 5 V, IC = 10 mA VBEon – – 770 mV IE = 0, VCB = 30 V ICB0 – – 15 nA IE = 0, VCB = 30 V, Tj = 150/C ICB0 – – 5 :A IEB0 – – 100 nA Base-Emitter voltage – Basis-Emitter-Spannung 1) Collector-Base cutoff current – Kollektorreststrom Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 3.5 pF 6 pF – 9 pF – – 2 dB 10 dB 1.2 dB 4 dB Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, f = 30 ... 15000 Hz BC 846... F BC 848 BC 849/850 F BC 849 F – 1.4 dB 4 dB BC 850 F – 1.4 dB 3 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ 420 K/W 2) RthA BC 856 ... BC 860 BC 846A = 1A BC 846B = 1B BC 847A = 1E BC 847B = 1F BC 847C = 1G BC 848A = 1J BC 848B = 1K BC 848C = 1L BC 849B = 2B BC 849C = 2C BC 850B = 2F BC 850C = 2G ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 11