VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB • Low leakage current TO-220 FULL-PAK • Fully isolated package (VINS = 2500 VRMS) Base common cathode 2 • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 2 Common cathode 1 Anode • Halogen-free according to IEC 61249-2-21 definition (-N3 only) 2 Common cathode 3 Anode 3 Anode 1 Anode VS-30CTH02PbF VS-30CTH02-N3 DESCRIPTION/APPLICATIONS 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. VS-30CTH02FPPbF VS-30CTH02FP-N3 The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY Package TO-220AB, TO-220FP IF(AV) 2 x 15 A VR 200 V These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. VF at IF 1.05 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM TC = 159 °C per diode (FULL-PAK) per diode Average rectified forward current IF(AV) UNITS 200 V 15 TC = 125 °C per device A 30 Non-repetitive peak surge current IFSM Operating junction and storage temperatures VALUES TJ = 25 °C 200 TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 15 A - 0.92 1.05 IR = 100 μA IF = 15 A, TJ = 125 °C - 0.78 0.85 VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - 5 300 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 200 V - 57 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Document Number: 94014 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 02-Jan-12 VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C - 26 - IF = 15 A dIF/dt = 200 A/μs VR = 160 V TJ = 125 °C Peak recovery current IRRM Reverse recovery charge - 40 - - 2.8 - TJ = 125 °C - 6.0 - TJ = 25 °C - 37 - TJ = 125 °C - 120 - TJ = 25 °C Qrr UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDITIONS TJ, TStg per diode RthJC (FULL-PAK) per diode MIN. TYP. MAX. UNITS - 65 - 175 °C - - 1.1 - - 3.5 Mounting surface, flat, smooth and greased Case style TO-220AB Marking device °C/W 30CTH02 Case style TO-220 FULL-PAK 30CTH02FP 100 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.4 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Document Number: 94014 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 02-Jan-12 VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 50 100 150 200 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Document Number: 94014 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 02-Jan-12 VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3 www.vishay.com Vishay Semiconductors 25 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC Square wave (D = 0.50) Rated VR applied 160 150 15 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 5 DC See note (1) 140 0 0 5 10 15 20 0 25 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Forward Power Loss Characteristics 180 100 IF = 15 A 170 160 DC 150 trr (ns) Allowable Case Temperature (°C) RMS limit 20 140 130 120 Square wave (D = 0.50) Rated VR applied 110 See note (1) VR = 160 V TJ = 125 °C TJ = 25 °C 100 0 5 10 15 20 10 100 25 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt 1000 Qrr (nC) IF = 15 A 100 10 100 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Document Number: 94014 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 02-Jan-12 VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 94014 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 02-Jan-12 VS-30CTH02PbF, VS-30CTH02-N3, VS-30CTH02FPPbF, VS-30CTH02FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 C T H 02 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - C = Common cathode 4 - T = TO-220 5 - H = Hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - None = TO-220AB 8 - Environmental digit: FP = TO-220 FULL-PAK PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-20CTH03PbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-20CTH03-N3 50 1000 Antistatic plastic tube VS-20CTH03FPPbF 50 1000 Antistatic plastic tube VS-20CTH03FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-220AB www.vishay.com/doc?95222 TO-220FP www.vishay.com/doc?95072 TO-220ABPbF www.vishay.com/doc?95225 TO-220AB-N3 www.vishay.com/doc?95028 TO-220FPPbF www.vishay.com/doc?95069 TO-220FP-N3 www.vishay.com/doc?95456 Document Number: 94014 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 02-Jan-12 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 (2 places) R 0.5 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments 4.8 4.6 Diodes 1. - Anode/open 2. - Cathode 3. - Anode 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95072 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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