oH VE S CO AV R M AI SIO PL LA N IA BL S NT E TISP3070T3BJ THRU TISP3395T3BJ *R DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxT3BJ Overvoltage Protector Series Dual High Current Protectors in a Space Efficient Package - 2 x 100 A 10/560 Current Rating - Modified 3-pin SMB (DO-214AA) Package 50 % Space Saving over Two SMBs - Y Configurations with Two SMB Packages 2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ 2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ SMB Package (Top View) 1 2 3 MDXXCJA Device Symbol Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge VDRM Device 1 (T or R) V(BO) V V TISP3070T3 58 70 TISP3080T3 65 80 TISP3095T3 75 95 TISP3115T3 90 115 TISP3125T3 100 125 TISP3145T3 120 145 TISP3165T3 135 165 TISP3180T3 145 180 TISP3200T3 155 200 TISP3219T3 180 219 TISP3250T3 190 250 TISP3290T3 220 290 TISP3350T3 275 350 TISP3395T3 320 3 (T or R) SD3TA A 2 (G) Rated for International Surge Wave Shapes Wave Shape IPPSM Standard A 395 .......................................UL Recognized Component 2/10 GR-1089-CORE 250 8/20 IEC 61000-4-5 250 10/160 TIA/EIA-IS-968 (FCC Part 68) 150 10/700 ITU-T K.20/.21/.45 120 10/560 TIA/EIA-IS-968 (FCC Part 68) 100 10/1000 GR-1089-CORE 80 Description These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less which use multiple SMBs. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH, level the device switches off and restores normal system operation. How To Order Device Package Carrier For Standard Termination Finish Order As TISP3xxxT3BJ BJ (3-pin modified SMB/DO-214AA J-Bend) R (Embossed Tape Reeled) TISP3xxxT3BJR Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. For Lead Free Termination Finish Order As TISP3xxxT3BJR-S TISP3xxxT3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol ±58 ’3080 ±65 ’3095 ±75 Unit ’3115 ±90 ’3125 ±100 ’3145 ±120 ’3165 Repetitive peak off-state voltage, (terminals 1-2 and 3-2) Value ’3070 ’3180 ±135 VDRM ±145 ’3200 ±155 ’3219 ±180 ’3250 ±190 ’3290 ±220 ’3350 ±275 ’3395 ±320 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 2x250 8/20 (IEC 61000-4-5, combinat ion wave generator, 1.2/50 voltage wave shape) 2x250 10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 µs voltage wave shape) 5/310 (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/.45/.21) 2x150 IPPSM 2x120 5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 µs voltage wave shape) 2x120 10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 µs voltage wave shape) 2x100 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 2x80 A Non-repetitive peak on-state current (see Notes 1 and 2) 50 Hz, 1 cycle 2x25 ITSM 60 Hz, 1 cycle 2x30 A 2x1.2 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A Junction temperature Storage temperature range di T/dt 500 A/µs TJ -40 to +150 °C Tstg -65 to +150 °C NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C. 2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and 3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The surge may be repeated after the device returns to its initial conditions. Recommended Operating Conditions Component Series resistor for GR-1089-CORE first-level surge survival Min 5 Series resistor for ITU-T recommendation K. 20/.45/.21 (coordination with 400 V GDT at 4 kV) 6.4 R1, R2 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival 0 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival 0 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival 2.5 Typ Max Unit Ω SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxT3BJ Overvoltage Protector Series Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C Parameter IDRM Repetitive peak offstate current V(BO) AC breakover voltage V(BO) I(BO) IH dv/dt ID Test Conditions VD = VDRM dv/dt = ±250 V/ms, R SOURCE = 300 Ω Min Typ Max TA = 25 °C ±5 TA = 85 °C ±10 ’3070 ±70 ’3080 ±80 ’3095 ±95 ’3115 ±115 ’3125 ±125 ’3145 ±145 ’3165 ±165 ’3180 ±180 ’3200 ±200 ’3219 ±219 ’3250 ±250 ’3290 ±290 ’3350 ±350 ’3395 ±395 ’3070 ±81 ’3080 ±91 ’3095 ±107 ’3115 ±128 ’3125 ±138 dv/dt ≤ ±1000 V/µs, Linear voltage ramp, ’3145 ±159 Ramp breakover Maximum ramp value = ±500 V ’3165 ±179 voltage di/dt = ±20 A/µs, Linear current ramp, ’3180 ±195 Maximum ramp value = ±10 A ’3200 ±215 ’3219 ±234 ’3250 ±265 ’3290 ±304 ’3350 ±361 ’3395 ±403 Breakover current dv/dt = ±250 V/ms, Holding current IT = ±5 A, di/dt = +/-30 mA/ms Critical rate of rise of off-state voltage Off-state current R SOURCE = 300 Ω ±800 Linear voltage ramp, Maximum ramp value < 0.85V DRM VD = ±50 V SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TA = 85 °C Unit µA V V mA ±150 mA ±5 kV/µs ±10 µA TISP3xxxT3BJ Overvoltage Protector Series Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Continued) Parameter Test Conditions f = 1 MHz, Min ‘3070 thru ‘3095 Vd = 1 V rms, VD = 0, ‘3115 thru ‘3219 ‘3250 thru ‘3395 f = 1 MHz, Coff Off-state capacitance f = 1 MHz, f = 1 MHz, Vd = 1 V rms, VD = -1 V Vd = 1 V rms, VD = -2 V Vd = 1 V rms, VD = -50 V NOTE Max 95 114 69 83 51 62 ‘3070 thru ‘3095 90 108 ‘3115 thru ‘3219 63 76 ‘3250 thru ‘3395 46 55 ‘3070 thru ‘3095 83 100 ‘3115 thru ‘3219 59 70 ‘3250 thru ‘3395 42 51 ‘3070 thru ‘3095 43 51 ‘3115 thru ‘3219 29 35 ‘3250 thru ‘3395 20 24 16 19 ‘3250 thru ‘3395 f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 3) Typ Unit pF 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured third terminal is connected to the guard terminal of the bridge. Thermal Characteristics Parameter R θJA NOTE Junction to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, (see Note 4) Min Typ Max Unit 90 °C/W 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxT3BJ Overvoltage Protector Series Parameter Measurement Information +i Quadrant I IPPSM Switching Characteristic ITSM IT V(BO) VT IH VDRM -v IDRM ID VD ID IDRM VD VDRM +v IH V(BO) VT IT ITSM I Quadrant III IPPSM Switching Characteristic -i Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2 All Measurements are Referenced to Terminal 2 SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PM4XAE TISP3xxxT3BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC4AH3AA 10 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4AH3AB Normalized Breakover Voltage |ID| - Off-State Current - µA VD = ±50 V 1 0·1 0·01 '3115 thru '3219 1.10 '3070 thru '3095 1.05 '3250 thru '3395 1.00 0.95 0.90 0·001 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C -25 150 Figure 2. 100 TC3T3AA NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4AH3AC 1.5 Normalized Holding Current IT - On-State Current - A 2.0 TA = 25 °C t W = 100 µs 70 50 40 30 20 15 10 7 5 4 3 1.0 0.9 0.8 0.7 0.6 0.5 2 1.5 1 0.7 150 Figure 3. ON-STATE CURRENT vs ON-STATE VOLTAG E 200 150 0 25 50 75 100 125 TJ - Junction Temperature - °C 0.4 1 1.5 2 3 41 5 7 VT - On-State Voltage - V Figure 4. 0 15 20 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 Figure 5. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxT3BJ Overvoltage Protector Series Typical Characteristics CAPACITANCE vs OFF-STATE VOLTAGE TC4AH3AD 60 '3070 thru '3095 50 40 30 '3115 thru '3219 20 '3250 thru '3395 15 10 0.5 TC4AH3AF TJ = 25 °C Vd = 1 V rms 1 2 3 5 10 20 30 VD - Off-state Voltage - V 50 100150 Figure 6. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 80 Coff - Off-State Capacitance - pF Coff – Off-State Capacitance – pF 90 80 70 OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE VD = 2 V 70 60 50 40 30 50 60 70 80 90100 150 200 250 300 350 VDRM - Repetivive Peak Off-State Voltage - V Figure 7. TISP3xxxT3BJ Overvoltage Protector Series Rating and Thermal Information VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI3TAA 20 VGEN = 600 V rms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 °C 15 10 9 8 7 6 5 0.99 0.98 SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xI TSM(t) 4 3 0.97 0.96 '3115 thru '3219 '3070 thru 0.95 '3095 0.94 2 1.5 1 0·1 TI4AH3AB 1.00 Derating Factor ITSM (t) - Non-Repetivive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 0.93 1 10 100 t - Current Duration - s Figure 8. 1000 '3250 thru '3395 0.92 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 9. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxT3BJ Overvoltage Protector Series MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions SMB03 Pad Size 2.50 (.099) 1.00 (.039) 2.80 (.110) 0.80 (.032) 1.75 (.069) 1.75 (.069) DIMENSIONS ARE: MILLIMETERS (INCHES) MD3BJAAA Device Symbolization Code Devices will be coded as below. Device Symbolization Code TISP3070T3 3070T3 TISP3080T3 3080T3 TISP3095T3 3095T3 TISP3115T3 3115T3 TISP3125T3 3125T3 TISP3145T3 3145T3 TISP3165T3 3165T3 TISP3180T3 3180T3 TISP3200T3 3200T3 TISP3219T3 3219T3 TISP3250T3 3250T3 TISP3290T3 3290T3 TISP3350T3 3350T3 TISP3395T3 3395T3 Carrier Information For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. Package SMB Carrier Embossed Tape Reel Pack SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Standard Quantity 3000 TISP3xxxT3BJ Overvoltage Protector Series MECHANICAL DATA Modified SMB (DO-214AA) Plastic Surface Mount Triode Package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB03 4.06 - 4.57 (.160 - .180) 3 3.30 - 3.94 (.130 - .155) 2 1 2.00 - 2.40 (.079 - .094) 1.90 - 2.10 (.075 - .083) 0.76 - 1.52 (.030 - .060) 5.21 - 5.59 (.205 - .220) DIMENSIONS ARE: 0.10 - 0.20 (.004 - .008) 1.42 - 1.57 (.056 - .062) 0.56 - 0.71 (.022 - .028) 0.79 - 0.94 (.031 - .037) MILLIMETERS (INCHES) MDXXCIA SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxT3BJ Overvoltage Protector Series MECHANICAL DATA Tape Dimensions SMB03 Package Single-Sprocket Tape 3.90 - 4.10 (.154 - .161) 1.50 MIN. (.059) ∅ 1.95 - 2.05 (.077 - .081) ∅ 1.55 - 1.65 (.061 - .065) 0.40 MAX. (.016) 1.65 - 1.85 (.065 - .073) 5.45 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 8.20 MAX. (.323) e 7.90 - 8.10 (.311 - .319) Direction of Feed 0 MIN. Carrier Tape Embossment Cover Tape 20° 4.50 MAX. (.177) Maximum component rotation Typical component cavity center line MILLIMETERS DIMENSIONS ARE: (INCHES) Typical component center line NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20° within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 mm ± 3.0 mm (12.99 in ± .118 in) Reel hub diameter 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm ± 0.5 mm (.512 in ± .020 in) C. 3000 devices are on a reel. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. MD3BJAB