Fairchild EGF1B Fast rectifiers (glass passivated) Datasheet

EGF1A - EGF1D
EGF1A - EGF1D
Features
•
•
•
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current, @ TL = 100°C
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
Tstg
TJ
Value
1A
50
1B
100
1C
150
1D
200
Units
V
1.0
A
30
A
-65 to +175
°C
-65 to +175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
2.0
W
RθJA
Thermal Resistance, Junction to Ambient*
85
°C/W
RθJL
Thermal Resistance, Junction to Lead*
30
°C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Device
Parameter
1A
VF
Forward Voltage @ 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Reverse Current @ rated VR
TA = 25°C
TA = 100°C
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
IR
CT
2001 Fairchild Semiconductor Corporation
1B
1C
Units
1D
1.0
V
50
ns
10
100
µA
µA
15
pF
EGF1A-EGF1D, Rev. D
EGF1A - EGF1D
100
1.6
TA
J = 25º C
Pulse Width = 300µ
µS
2% Duty Cycle
1.4
Forward Current, IF [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
1.2
1
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.8
0.6
0.4
10
1
0.1
0.2
0
0
25
50
75
100
125
Lead Temperature [ºC]
150
Figure 1. Forward Current Derating Curve
40
1000
30
100
20
10
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 3. Non-Repetitive Surge Current
0.4
0.6
0.8
1
1.2
Forward Voltage, VF [V]
1.4
1.6
Figure 2. Forward Voltage Characteristics
Reverse Current, IR [mA]
Peak Forward Surge Current, IFSM [A]
0.01
0.2
175
T A = 100º C
10
TA
J = 25º C
1
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, CT [pF]
60
50
40
30
20
10
0
0.1
0.5 1 2
5 10 20 50 100
Reverse Voltage, V R [V]
500
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. D
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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The datasheet is printed for reference information only.
Rev. H4
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