Microsemi CD5194 General purpose silicon diode Datasheet

• GENERAL PURPOSE SILICON DIODES
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
24 MILS
12 MILS
MAXIMUM RATINGS
24 MILS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
VRM
VRWM
IO
IO
TA=+150°C
IFSM
tp = 1/120 S
TA=25°C
V(pk)
V(pk)
mA
mA
A
80
180
250
270
80
180
250
70
180
225
225
70
180
225
200
200
200
400
200
200
200
50
50
50
150
50
50
50
2
2
2
5
2
2
2
VF(1)
IR1 at VRWM
TA+25°C
IR2 at VRM
TA+25°C
IR3 at VRWM
TA+150°C
CAP
@VR
=4V
V dc
nA dc
µA
µA dc
pF
25
25
25
50
25
25
25
100
100
100
50
100
100
100
5
5
5
25
5
5
5
–
–
–
2.0
–
–
–
TYPE
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
TYPE
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
0.8
0.8
0.8
0.8
0.8
0.8
0.8
-
1.0
1.0
1.0
1.0
1.0
1.0
1.0
12 MILS
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
DESIGN DATA
METALLIZATION:
Top: (Anode)....................Al
Back: (Cathode)..............Au
AL THICKNESS ............25,000 Å Min
GOLD THICKNESS ........4,000 Å Min
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
CHIP THICKNESS ..................10 Mils
TOLERANCES: ALL
Dimensions ± 2 mils
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: [email protected]
173
CD483B, CD485B, CD486B, CD645, CD5194
thru
CD5196
1000
0ºC
10
1
-65ºC
25º
C
100
ºC
15
IF - Forward Current - (mA)
100
0.1
.3
.4
.5
.6
.7
.8
.9
1.0
VF - Forward Voltage (V)
1.1
1.2
1.3
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
IR - Reverse Current - (µA)
100
10
1
150ºC
0.1
C
100º
25ºC
.01
-65ºC
NOTE :
.001
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
174
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
All temperatures shown on graphs are
junction temperatures
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