DSK DB3 Silicon bidirectional diac Datasheet

Diode Semiconductor Korea
SILICON BIDIRECTIONAL DIACS
DB3.DB4
VOLTAGE RANGE: 28-45 V
FEATURES
The three layer,two termnal,axial lead,hermetically
1111sealed diacs are designed specifically for triggering
1111thyristors.They demonstrate low breakover current at
1111breakover voltage as they withstand peak pulse
1111current,The breakover symmetry is within three
1111volts(DB3,DB4). These diacs are intended for use in
CCCthyrisitors phase control,circuits for lamp dimming,
FFFI universal motor speed control,and heat control.
DO-35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3,DB4
UNITS
Pc
150.0
mW
ITRM
2.0
A
TJ
-40--- +125
o
TSTG
-40--- +125
o
Power dissipation on printed
TA=50oC circuit (L=10mm)
Repetitive peak on-state
current
tp=20 S
f=120Hz
Operating junction temperature
Storage temperature
C
C
ELECTRICAL CHARACTERISTICS
Parameters
Breakover voltage (NOTE 1)
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
Test Conditions
VBO
I+VBO II-VBOI
VI
I±
C=22nf(NOTE 2)
See FIG.1
DB3
DB4
Min
28
35
Typ
32
40
Max
36
45
UNITS
V
C=22nf(NOTE 2)
See FIG.1
Max
±3.0
V
I=(IBO to IF=10mA)
See FIG.1
Min
5.0
V
V
Output voltage (NOTE 1)
Vo
See FIG.2
Min
5.0
Breakover current (NOTE 1)
IBO
C=22nf(NOTE 2)
Max
100.0
Rise time (NOTE 1)
tr
See FIG.3
Typ
1.5
S
Leakage current (NOTE 1)
IR
V R=0.5 V BO
See FIG.1
Max
10.0
A
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
A
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DB3.DB4
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
+IF
10mA
10KΩ
I BO
IB
-V
+V
0.5VBO
500KΩ
D.U.T
220V
60Hz
Vo
R=20Ω
0.1µ F
V
VBO
-IF
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
P(mW)
160
140
90%
120
IP
100
80
60
40
10%
20
tr
0
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
1.08
Tamb( ℃ )
0
10
20 30
40 50
60
70
80
90
100 110 120 130
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
ITRM(A)
VBO(TJ)
VBO(TJ=25 )
2
1
1.06
TJ(
f=100Hz
TJ initial=25℃
)
1.04
0.1
tp(µ s)
1.02
1.00
25
50
75
100
125
0.01
10
100
1000
10000
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