NJSEMI BCY71 General purpose application Datasheet

, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BCY70
BCY71/BCY72
GENERAL PURPOSE APPLICATIONS
DESCRIPTION
The BCY70, BCY71 and BCY72 are silicon planar
epitaxial PNP transistors in Jedec TO-18 metaJ
case.
Ok.
TO-18
INTERNAL SCHEMATIC DIAGRAM
PNP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (le = 0)
Emitter-base Voltage (Ic = 0}
Collector Peak Current
Total Power Dissipation at Tam6 s 25 °C
Ptol
Storage and Junction Temperature
Tsto, T,
Pulsed : pulse duration = 300 us. duty cyde = 1 %.
VCBO
VCEO
VEBO
ICM
BCY70
Value
BCY71
BCY72
-50
-45
-25
-40
-45
-25
Unit
V
V
-5
V
-200
mA
350
mW
- 65 to 200
:C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IHbHMALDATA
Rth J-C83B
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
150
500
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
ICES
IEBO
VCE (sat)*
VBE(sat)*
hFE*
hfa
fr
Parameter
Collector Cutoff Current
(V B e=0)
Emitter cutoff Current
Oo-O)
Collector-emitter Saturation
Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Small Signal Current Gain
(for BCY71 only)
Transition Frequency
Test Conditions
For BCY70
VCE =-20 V
VCE = - 50 V
For BCY71
VCB = - 20 V
VCB = - 45 V
For BCY72
VCB = - 20 V
VCB = - 25 V
VEB = - 5 V
lc =- 10 mA
lc =- 50 mA
lc =- 10 mA
For BCY70 and
lc =-50 mA
For BCY70
l c =-0,1 mA
lc = - 1 mA
lc = - 1 0 m A
lc = - 50 mA
For BCY71
lc =-0.01 mA
l c =-0.1 mA
l c « - 1 mA
lc =- 10mA
lc = - 5 0 m A
For BCY72
l c = - 1 mA
lc =- 10mA
lc = - 1 mA
f = 1 kHz
lc =-0,1 mA
f = 10.7 MHz
*
Emitter-base Capacitance
CCBO
Collector-base Capacitance
Pulsed : pulse duration n 300 us, duty cycle = 1 %.
VCE
VCE
VCE
VCE
=- 1 V
=-1 V
=-1 V
=- 1 V
VCE = - 1 V
Vce = - 1 V
VCE = - 1 V
VCE = - 1 V
VCE =- 1 V
VCE — 1 V
VCE =- 1 V
VCE =-10 V
Typ.
- 0.6
Max.
Unit
- 10
-500
nA
nA
-100
- 10
nA
HA
-100
- 10
-10
nA
HA
HA
-0.25
-0.5
V
V
- 0.9
-1.2
V
V
40
45
50
15
60
80
90
100
15
600
40
50
400
100
VCE =-20 V
For BCY71
VCE =- 2 0 V
15
For BCY70
For BCY70 and BCY72
lc=0
V EB = - 1 V
f - 1 MHz
IE=0
VCB=-10V
f » 1 MHz
250
200
lc--10mA
f = 100 MHz
CEBO
IB =- 1 mA
IB = - 5 mA
IB =- 1 mA
BCY71 Only
IB =- 5 mA
Mln.
MHz
-
MHz
MHz
8
6
PF
PF
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
NF
hi.
lc =-1 mA
f = 1 kHz
VCE =-10 V
h,e
Reverse Voltage Ratio
(for BCY71 only)
l c = - 1 mA
f = 1kHz
VCE =-10 V
hoa
Output Admittance
(for BCY71 only)
l c » - 1 mA
f = 1 kHz
VCE =-10 V
Delay Time
(for BCY70 and BCY72 only)
VEE=3V
Rise Time
(for BCY70 and BCY72 only)
lc=-10mA
IBI = - 1 mA
lc=-10mA
IB1 = - 1 mA
Storage Time
(for BCY70 and BCY72 only)
tr
u
tf
ton
tod
Win.
Typ.
lc =-0.1 mA
VCE = - 5 V
Rg = 2 k O
f = 10 to 10 000 Hz
For BCY70 and BCY72
for BCY71
Input Impedance
(for BCY71 only)
td
*
Teat Conditions
Noise Figure
Max.
Unit
6
2
dB
dB
kn
2
12
20x10-"
us
10
60
ns
23
35
25
35
lc=-10mA
VEE=3V
|B1 =— |B2 =— 1 mA
270
350
Fall Time
(for BCY70 and BCY72 only)
lc=-10mA
VEE=3V
|B1 =- |B2 =-1 mA
50
80
Turn-on Time
(for BCY70 and BCY72 only)
lc=-10mA
IBI = - 1 mA
48
65
Turn-off Time
(for BCY70 and BCY72 only)
lc=-10mA
VEg=3V
IBI =- lea =-1 rnA
320
420
TEST CIRCUIT
Test Circuit for Switching Times.
3.0V
-20V
VBB=7.0V
ns
ns
ns
Vee=3V
Pulsed : pulse duration = 300 us. duty cycle « 1 %.
-20V
ns
VEE=3V
ns
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