Mitsubishi FA01219A Gaas fet hybrid ic Datasheet

MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
DESCRIPTION
Unit:mm
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
GND
FEATURES
• Low voltage
3.5V
• High gain
22.5B
• High efficiency
50%
• High power
30.5dBm
1
8
2
7
3
6
4
5
APPLICATION
GND
10.0
PDC0.8GHz
0.8
2.0
6.0
1 RF INPUT
5
2 VD1
6
3
4
GND
VD2
RF OUTPUT
GND
7 GND
8 VG1,2
tolerance:±0.2
ABSOLUTE MAXIMUM RATINGS
Symbol
VD
Pin
TC(op)
Tstg
Parameter
Drain voltage
Input power
Operation case temperature
Storage temperature
Condition
Po≤30.5dBm
ZG=ZL=50Ω
Tc
25˚C
25˚C
–
–
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
˚C
˚C
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol
Parameter
f
Frequency
Input power
Pin
IDt
Total drain current
Return loss
ρin
±50kHz adjacent channel power
ACP50
ACP100 ±100kHz adjacent channel power
2nd harmonics
2fo
3rd harmonics
3fo
Test conditions
Po=30.5dBm
VD1=VD2=3.5V
VG1,2=-2.5V
ZG=ZL=50Ω
(π/4DQPSK)
Ditto
(CW)
Min
925
–
–
–
–
–
–
–
Limits
Typ
–
5
640
–
–
–
–
–
Max
958
8
720
-6
-47
-62
-30
-30
Unit
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS 1
Frequency
(MHz)
925.0
941.5
958.0
Pin
(dBm)
5.78
6.05
6.52
Po
(dBm)
30.5
30.5
30.5
Id1
(mA)
93
90
91
Id2
(mA)
552
547
543
Idt
(mA)
644
637
634
Ig1,2
(mA)
-1.86
-1.86
-1.86
-50k
(dBc)
-49.9
-51.7
-51.6
30
f=925MHz
VD1=3.5V
VD2=3.5V
VG=-2.5V
-100k
(dBc)
-62.5
-63.6
-64.4
VD1=3.5V,VD2=3.5V,VG=-2.5V
+100k
2SP
3SP
RL
(dBc)
(dBc)
(dBc)
(dB)
-62.6
-37.5
-49.2
-10.7
-64.1
-37.4
-49.7
-9.4
-64.6
-37.2
-50.2
-8.5
PO,IDs vs Pin CHARACTERSTICS
PO,ACP vs Pin CHARACTERISTICS
35
+50k
(dBc)
-49.2
-51.2
-51.6
-30
35
-40
30
PO
-50
25
IDt
-60
20
-70
15
1000
900
800
PO
700
ACP+50k
25
600
ACP-50k
ID2
20
ACP+100k
500
400
300
ACP-100k
15
200
ID1
10
-5.0
0.0
5.0
Pin(dBm)
-80
10.0
10
-5
0
5
100
0
10
Pin(dBm)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS 2
ID vs f CHARACTERISTICS
ACP vs f CHARACTERISTICS
-40
-45
VD1=3.5V
VD2=3.5V
VG=-2.5V
PO=30.5dBm SET
-50k
-50
+50k
-55
-60
+100k
-65
-100k
925
908.5
941.5
958
974.5
800
750
700
650
600
550
500
450 VD1=3.5V
VD2=3.5V
400
VG=-2.5V
350 PO=30.5dBm SET
300
250
200
150
1D1
100
50
0
908.5
925
941.5
f(MHz)
-2.0
7.0
-4.0
Pin
6.0
-6.0
-8.0
R.L.
4.0
-10.0
3.0
-12.0
VD1=3.5V
VD2=3.5V
VG=-2.5V
PO=30.5dBm SET
1.0
0.0
908.5
925
941.5
f(MHz)
958
974.5
ID vs VD CHARACTERISTICS
Pin, R.L vs f CHARACTERISTICS
2.0
1D2
f(MHz)
8.0
5.0
IDt
958
-14.0
-16.0
-18.0
974.5
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
IDt
ID2
f=925MHz
VG=-2.5V
PO=30.5dBm SET
ID1
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4
VD(V)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
EQUIVALENT CIRCUIT
1ST GATE
2ND GATE
RF INPUT
MATCHING
CIRCUIT
2ND DRAIN
1ST DRAIN
MATCHING
CIRCUIT
MATCHING
CIRCUIT
RF OUTPUT
GND
Nov. ´97
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