PHILIPS BC549 Npn general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector
• Low noise stages in audio frequency equipment.
DESCRIPTION
handbook, halfpage1
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
3
2
3
2
1
MAM182
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC549
−
30
V
BC550
−
50
V
−
30
V
−
45
V
−
5
V
collector-emitter voltage
open base
BC549
BC550
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
250
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BC549C; BC550C
VCEsat
VBEsat
collector-emitter saturation voltage
base-emitter saturation voltage
CONDITIONS
IE = 0; VCB = 30 V
MIN.
−
TYP.
−
MAX.
UNIT
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
µA
IC = 0; VEB = 5 V
−
−
100
nA
IC = 10 µA; VCE = 5 V; see Fig.2
−
270
−
IC = 2 mA; VCE = 5 V; see Fig.2
420
520
800
IC = 10 mA; IB = 0.5 mA
−
90
250
mV
IC = 100 mA; IB = 5 mA
−
200
600
mV
IC = 10 mA; IB = 0.5 mA; note 1
−
700
−
mV
IC = 100 mA; IB = 5 mA; note 1
−
900
−
mV
IC = 2 mA; VCE = 5 V; note 2
580
660
700
mV
VBE
base-emitter voltage
IC = 10 mA; VCE = 5 V; note 2
−
−
770
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1.5
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
11
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz
100
−
−
MHz
F
noise figure
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 10 Hz to 15.7 kHz
−
−
4
dB
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
−
−
4
dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
MBH725
600
handbook, full pagewidth
VCE = 5 V
hFE
400
200
0
10−2
10−1
1
10
BC549C; BC550C.
Fig.2 DC current gain; typical values.
1999 Apr 22
4
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 Apr 22
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
NOTES
1999 Apr 22
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 22
Document order number:
9397 750 05678
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