PHILIPS BYV95A Fast soft-recovery controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV95 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1982
1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV95 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
2/3 page k(Datasheet)
• Available in ammo-pack.
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
IF(AV)
IFRM
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV95A
−
200
V
BYV95B
−
400
V
BYV95C
−
600
V
BYV95A
−
200
V
BYV95B
−
400
V
BYV95C
−
600
V
Ttp = 65 °C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
−
1.5
A
Tamb = 65 °C; PCB mounting (see
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
−
0.8
A
repetitive peak reverse voltage
continuous reverse voltage
average forward current
repetitive peak forward current
Ttp = 65 °C; see Fig. 4
−
17
A
Tamb = 65 °C; see Fig. 5
−
9
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
35
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
1996 Jun 07
see Fig. 7
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV95 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
IF = 3 A; Tj = Tj max; see Fig. 8
−
−
1.35
V
IF = 3 A; see Fig. 8
−
−
1.60
V
BYV95A
300
−
−
V
BYV95B
500
−
−
V
BYV95C
700
−
−
V
VR = VRRMmax;
see Fig. 9
−
−
1
µA
VR = VRRMmax; Tj = 165 °C;
see Fig. 9
−
−
150
µA
VF
forward voltage
V(BR)R
reverse avalanche
breakdown voltage
IR
CONDITIONS
UNIT
IR = 0.1 mA
reverse current
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig. 12
−
−
250
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig. 10
−
45
−
pF
maximum slope of
reverse recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.13
−
−
7
A/µs
dI R
-------dt
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
46
K/W
100
K/W
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV95 series
GRAPHICAL DATA
MGC581
MGC580
1.2
2.0
handbook, halfpage
IF(AV)
(A)
1.6
handbook, halfpage
IF(AV)
lead length 10 mm
(A)
0.8
1.2
0.8
0.4
0.4
0
0
100
0
0
200
Ttp ( o C)
100
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Tamb ( oC)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC578
20
handbook, full pagewidth
IFRM
δ=
0.05
(A)
16
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
Ttp = 65 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV95 series
MGC579
10
handbook, full pagewidth
IFRM
δ=
0.05
(A)
8
6
0.1
4
0.2
0.5
2
1
0
10 2
10 1
1
10 2
10
10 3
10 4
tp (ms)
Tamb = 65 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC576
MGC575
3
200
handbook, halfpage
P
(W)
handbook, halfpage
a = 3 2.5
2
1.57
1.42
Tj
o
( C)
2
100
1
0
0
1
A
B
C
200
400
600
0
2
0
IF(AV) (A)
VR (V)
800
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1996 Jun 07
Dotted line = VRRM; δ = 0.5.
Fig.7
5
Maximum permissible junction temperature
as a function of reverse voltage.
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV95 series
MGC577
MGC574
3
10halfpage
handbook,
8
handbook, halfpage
IF
(A)
IR
(µA)
6
10
4
10
2
1
2
10 1
0
0
1
2
VF (V)
3
0
100
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
VR = VRRMmax.
Fig.8
Fig.9
Forward current as a function of forward
voltage; maximum values.
o
Tj ( C)
200
Reverse current as a function of junction
temperature; maximum values.
MGC582
10 2
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
10
102
VR (V)
103
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
1996 Jun 07
Fig.11 Device mounted on a printed-circuit board.
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, full pagewidth
BYV95 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
IF halfpage
andbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.13 Reverse recovery definitions.
1996 Jun 07
7
MAM057
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
k
3.81
max
28 min
Dimensions in mm.
The marking band indicates the cathode.
,
4.57
max
BYV95 series
a
28 min
0.81
max
MBC880
Fig.14 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 07
8
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