Microsemi APTGT200DA120D3G Boost chopper trench field stop igbt power module Datasheet

APTGT200DA120D3G
Boost chopper
Trench + Field Stop IGBT
Power Module
Q2
3
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
1
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
6
7
VCES = 1200V
IC = 200A @ Tc = 80°C
2
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 125°C
400A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
September, 2008
IC
Max ratings
1200
300
200
400
±20
1050
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-5
APTGT200DA120D3G – Rev 1
Symbol
VCES
APTGT200DA120D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 8mA
VGE = 20V, VCE = 0V
1.4
5.0
Typ
1.7
2.0
5.8
Max
Unit
500
2.1
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Input Capacitance
Crss
Reverse Transfer Capacitance
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V,VCE = 25V
f = 1MHz
VGE=±15V, IC=200A
VCE=600V
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 3.6Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 3.6Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 200A
Tj = 125°C
RG = 3.6Ω
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
Min
Test Conditions
Min
1200
Typ
14
0.6
nF
1.9
µC
250
90
550
ns
130
300
100
650
ns
180
15
mJ
35
800
A
Reverse diode ratings and characteristics
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
IF = 200A
VGE = 0V
IF = 200A
VR = 600V
di/dt =3500A/µs
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
200
1.6
1.6
170
Tj = 125°C
280
Tj = 25°C
22
Tj = 125°C
40
Tj = 25°C
9
Tj = 125°C
16
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Max
750
1000
Unit
V
µA
A
2.1
V
September, 2008
IRRM
Typ
ns
µC
mJ
2-5
APTGT200DA120D3G – Rev 1
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT200DA120D3G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
For terminals
To Heatsink
M6
M6
2500
-40
-40
-40
3
3
Typ
Max
0.12
0.20
Unit
°C/W
V
150
125
125
5
5
350
°C
N.m
g
D3 Package outline (dimensions in mm)
1°
A
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3-5
APTGT200DA120D3G – Rev 1
September, 2008
DÉTAIL A
APTGT200DA120D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
400
TJ = 125°C
TJ=25°C
VGE=17V
300
TJ=125°C
IC (A)
IC (A)
300
200
100
VGE=15V
200
VGE=9V
100
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2 2.5
VCE (V)
VCE (V)
75
VCE = 600V
VGE = 15V
RG = 3.6 Ω
TJ = 125°C
TJ=25°C
60
E (mJ)
IC (A)
300
200
100
3
3.5
4
Energy losses vs Collector Current
Transfert Characteristics
400
TJ=125°C
45
Eoff
Eon
30
Err
15
0
0
5
6
7
8
9
10
11
0
12
100
Switching Energy Losses vs Gate Resistance
70
50
40
300
400
Reverse Bias Safe Operating Area
500
VCE = 600V
VGE =15V
IC = 200A
TJ = 125°C
60
200
IC (A)
VGE (V)
Eon
400
Eoff
IC (A)
E (mJ)
VGE=13V
30
300
200
VGE=15V
TJ=125°C
RG=3.6 Ω
20
100
Err
10
0
0
0
4
8
12
16
20
Gate Resistance (ohms)
0
24
300
600
900
1200
1500
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.08
0.06
0.04
0.02
IGBT
September, 2008
0.12
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
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1
10
4-5
APTGT200DA120D3G – Rev 1
Thermal Impedance (°C/W)
0.14
APTGT200DA120D3G
Forward Characteristic of diode
400
VCE=600V
D=50%
RG=3.6 Ω
TJ=125°C
TC=75°C
40
ZCS
30
20
TJ=25°C
300
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
50
ZVS
100
Hard
Switching
10
200
TJ=125°C
0
0
0
40
80
120 160
IC (A)
200
240
0
280
0.4
0.8
1.2
VF (V)
1.6
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.25
Diode
0.2
0.9
0.15
0.7
0.1
0.5
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT200DA120D3G – Rev 1
September, 2008
rectangular Pulse Duration (Seconds)
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